comset semiconductors 1/3 BD130 absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage 60 v v cbo collector-base voltage 100 v v cex collector-emitter voltage v be =-1.5 v 100 v i c collector current 15 a i b base current 7 a p t power dissipation @ t c = 45 100 watts t j junction temperature t s storage temperature -55 to +200 c the BD130 is a silicon epitaxial-base npn transistor in jedec to- 3 metal case. it is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. npn silicon transistor power linerar and switching applications
comset semiconductors 2/3 BD130 thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction to case 1.55 c/w electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit v ceo(br) collector-emitter breakdown voltage (*) i c =200 ma, i b =0 60 v v ce(sat) collector-emitter saturation voltage (*) i c =4 a, i b =0.4 a -0.51.1 v v ce =100 v v be =-1.5 v -- 0.5 i cex collector-emitter cutoff current v ce =100 v v be =-1.5 v t case =150c --30 ma i ebo emitter-base cutoff current v eb =7 v --5.0ma v be base-emitter voltage (*) i c =4.0 a, v ce =4.0v - 0.95 1.8 v f t transition frequency i c =0.1 a, v ce =4 v 1.1 mhz
comset semiconductors 3/3 BD130 symbol ratings test condition(s) min typ mx unit h 21e static forward current transfer ratio (*) v ce =4.0 v, i c =4.0 a 20 -70 - (*) pulse width 300 s, duty cycle 2.0% (1) collector-emitter voltage limited et v ceci = v rated by an auxiliary circuit mechanical data case to-3 dimensions mm inches a 25,51 1,004 b 38,93 1,53 c 30,12 1,18 d 17,25 0,68 e 10,89 0,43 g 11,62 0,46 h 8,54 0,34 l 1,55 0,6 m 19,47 0,77 n 1 0,04 p 4,06 0,16 pin 1 : base pin 2 : collector case : emitter
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