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savantic semiconductor product specification silicon pnp power transistors 2SA1209 description with to-126 package complement to type 2sc2911 high breakdown voltage fast switching speed applications high-voltage switching and af 100w predriver applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter -180 v v ceo collector- emitter voltage open base -160 v v ebo emitter-base voltage open collector -5 v i c collector current -0.14 a i cm collector current-peak -0.20 a t a =25 1.0 p c collector power dissipation t c =25 10 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1209 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =-50ma; i b =-5ma -0.4 v i cbo collector cut-off current v cb =-80v; i e =0 -0.1 a i ebo emitter cut-off current v eb =-4v; i c =0 -0.1 a h fe dc current gain i c =-10ma ; v ce =-5v 100 400 f t transition frequency i c =-10ma ; v ce =-10v 150 mhz c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 4.0 pf switching times resistive load t on turn-on time 0.1 s t s storage time 1.5 s t f fall time i c =10ma i b1 =-i b2 =1ma 0.1 s h fe classifications r s t 100-200 140-280 200-400
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1209 package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon pnp power transistors 2SA1209

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