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preliminary data sheet april 2003 AGR21010E 10 w, 2000 mhz, n-channel e-mode, lateral mosfet introduction the AGR21010E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (ldmos) rf power transistor suitable for cellular, personal communications sys- tem (pcs), digital communication system (dcs), and universal mobile telecommunication system (umts) base station power amplifier applications with fre- quencies up to 2600 mhz. the AGR21010E is also suitable for gsm/edge, time division multiple access (tdma), code division multiple access (cdma), wideband code division multiple access (wcdma), single and multicarrier applications. figure 1. AGR21010Eu package features n continuous wave (cw) performance characterized in frequency 921 mhz to 960 mhz band @ 26 v: output power: 10 w minimum @ p 1db . power gain: 21 db. efficiency: 61% @ p 1db . edge acp @ 2 w. return loss: C 12 db. n cw performance characterized in frequency 1930 mhz to 1990 mhz band @ 28 v: output power: 10 w minimum @ p 1db . power gain: 16 db. efficiency: 58% @ p 1db . im3: C 32 dbc, 10 w pep. return loss: C 10 db. n cw performance characterized in frequency 2110 mhz to 2170 mhz band @ 28 v: output power: 10 w minimum @ p 1db . power gain: 15 db. efficiency: 57% @ p 1db . im3: C 31 dbc, 10 w pep. return loss: C 10 db. n high-reliability gold-metalization process. n low hot carrier injection (hci) induced bias drift over 20 years. n high gain, efficiency, and linearity. n integrated esd protection. n device can withstand a 10:1 voltage standing wave ratio (vswr) with 10 w cw output power. n large signal impedance parameters available. table 1. thermal characteristics table 2. absolute maximum ratings * * stresses in excess of the absolute maximum ratings can cause permanent damage to the device. these are absolute stress rat- ings only. functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. exposure to absolute maximum ratings for extended periods can adversely affect device reliability. table 3. esd rating * * although electrostatic discharge (esd) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to esd and electrical overstress (eos) during all handling, assembly, and test operations. agere employs both a human-body model (hbm) and a charged-device model (cdm) qualification requirement in order to determine esd-susceptibility limits and protection design evaluation. esd voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by jedec's jesd22-a114 (hbm) and jesd22-c101 (cdm) standards. caution: mos devices are susceptible to damage from elec- trostatic charge. reasonable precautions in han- dling and packaging mos devices should be observed. parameter sym value unit thermal resistance, junction to case: AGR21010E ur jc 4.5 c/w parameter sym value unit drain-source voltage v dss 65 vdc gate-source voltage v gs C0.5, 15 vdc total dissipation at t c = 25 c AGR21010Eu p d 38.9 w derate above 25 c AGR21010Eu 0.22 w/c operating junction tempera- ture t j 200 c storage temperature range t stg C65, 150 c device minimum threshold class hbm cdm hbm cdm AGR21010E 1 tbd
2 agere systems inc. 10 w, 2000 mhz, n-channel e-mode, lateral mosfet april 2003 AGR21010E preliminary data sheet electrical characteristics recommended operating conditions apply unless otherwise specified: t c = 30 c. table 4. dc characteristics, 921 mhz960 mhz table 5. rf characteristics, 921 mhz960 mhz 1. across band, 921 mhz960 mhz. parameter symbol min typ max unit off characteristics drain-source breakdown voltage (v gs =0, i d =25a) v (br)dss 65 vdc gate-source leakage current (v gs =5v, v ds =0v) i gss 0.3adc zero gate voltage drain leakage current (v ds =26v, v gs =0v) i dss 0.9adc on characteristics forward transconductance (v ds =10v, i d =1a) g fs 0.65 s gate threshold voltage (v ds =10v, i d =43a) v gs(th) 3.3 4.8 vdc gate quiescent voltage (v ds =26v, i d = 100 ma) v gs(q) 3.7 vdc drain-source on-voltage (v gs =10v, i d =0.5a) v ds(on) 0.56 vdc parameter symbol min typ max unit dynamic characteristics reverse transfer capacitance (v ds =26v, v gs =0, f=1.0mhz) c rss 0.25 pf output capacitance (v ds = 26 vdc, v gs = 0, f = 1.0 mhz) c oss 5.15 pf input capacitance (v ds = 26 vdc, v gs = 0, f = 1.0 mhz) c iss 18.2 pf functional tests (in agere systems supplied test fixture) 1 power gain (v ds = 26 v, p out = 2 w, i dq = 100 ma) g ps 21 db drain efficiency (v ds = 26 v, p out = p 1db , i dq = 100 ma) 61 % edge linearity characterization (p out = 2 w, f = 940.5 mhz, v ds = 26 v, i dq = 100 ma): modulation spectrum @ 400 khz (alt1) C58 dbc modulation spectrum @ 600 khz (alt2) C71 dbc output power (v ds = 26 v, 1 db gain compression, i dq = 100 ma) p 1db 10 11 w input return loss irl C12 db ruggedness (v ds = 26 v, p out = 10 w, i dq = 100 ma, vswr = 10:1, all angles) no degradation in output power.
agere systems inc. 3 preliminary data sheet AGR21010E april 2003 10 w, 2000 mhz, n-channel e-mode, lateral mosfet electrical characteristics (continued) recommended operating conditions apply unless otherwise specified: t c = 30 c. table 6. dc characteristics, 1930 mhz1990 mhz table 7. rf characteristics, 1930 mhz1990 mhz 1. across band, 1930 mhz1990 mhz. parameter symbol min typ max unit off characteristics drain-source breakdown voltage (v gs =0, i d =25a) v (br)dss 65 vdc gate-source leakage current (v gs =5v, v ds =0v) i gss 0.3adc zero gate voltage drain leakage current (v ds =26v, v gs =0v) i dss 0.9adc on characteristics forward transconductance (v ds =10v, i d =1a) g fs 0.65 s gate threshold voltage (v ds =10v, i d =43a) v gs(th) 3.3 4.8 vdc gate quiescent voltage (v ds =26v, i d = 100 ma) v gs(q) 3.7 vdc drain-source on-voltage (v gs =10v, i d =0.5a) v ds(on) 0.56 vdc dynamic characteristics reverse transfer capacitance (v ds =28v, v gs =0, f=1.0mhz) c rss 0.3 pf output capacitance (v ds = 28 vdc, v gs = 0, f = 1.0 mhz) c oss 5.0 pf input capacitance (v ds = 28 vdc, v gs = 0, f = 1.0 mhz) c iss 18.2 pf parameter symbol min typ max unit functional tests (in agere systems supplied test fixture) 1 power gain (v ds = 28 v, p out = 5 w, i dq = 100 ma) g ps 16 db drain efficiency (v ds = 28 v, p out = p 1db , i dq = 100 ma) 58 % output power (v ds = 28 v, 1 db gain compression, i dq = 100 ma) p 1db 10 11 w third-order intermodulation distortion (100 khz spacing, v ds = 28 v, p out = 10 wpep, i dq = 100 ma) im3 C32 dbc input return loss irl C10 db ruggedness (v ds = 28 v, p out = 10 w, i dq = 100 ma, vswr = 10:1, all angles) no degradation in output power.
4 agere systems inc. 10 w, 2000 mhz, n-channel e-mode, lateral mosfet april 2003 AGR21010E preliminary data sheet electrical characteristics (continued) recommended operating conditions apply unless otherwise specified: t c = 30 c. table 8. dc characteristics, 2110 mhz2170 mhz table 9. rf characteristics, 2110 mhz2170 mhz 1. across band, 2110 mhz2170 mhz. parameter symbol min typ max unit off characteristics drain-source breakdown voltage (v gs =0, i d =25a) v (br)dss 65 vdc gate-source leakage current (v gs =5v, v ds =0v) i gss 0.3adc zero gate voltage drain leakage current (v ds =26v, v gs =0v) i dss 0.9adc on characteristics forward transconductance (v ds =10v, i d =1a) g fs 0.65 s gate threshold voltage (v ds =10v, i d =43a) v gs(th) 3.3 4.8 vdc gate quiescent voltage (v ds =26v, i d = 100 ma) v gs(q) 3.7 vdc drain-source on-voltage (v gs =10v, i d =0.5a) v ds(on) 0.56 vdc dynamic characteristics reverse transfer capacitance (v ds =28v, v gs =0, f=1.0mhz) c rss 0.3 pf output capacitance (v ds = 28 vdc, v gs = 0, f = 1.0 mhz) c oss 5.0 pf input capacitance (v ds = 28 vdc, v gs = 0, f = 1.0 mhz) c iss 18.2 pf parameter symbol min typ max unit functional tests (in agere systems supplied test fixture) 1 power gain (v ds = 28 v, p out = 5 w, i dq = 100 ma) g ps 15 db drain efficiency (v ds = 28 v, p out = p 1db , i dq = 100 ma) 57 % output power (v ds = 28 v, 1 db gain compression, i dq = 100 ma) p 1db 10 11 w third-order intermodulation distortion (100 khz spacing, v ds = 28 v, p out = 10 wpep, i dq = 100 ma) im3 C31 dbc input return loss irl C10 db ruggedness (v ds = 28 v, p out = 10 w, i dq = 100 ma, vswr = 10:1, all angles) no degradation in output power.
agere systems inc. 5 preliminary data sheet AGR21010E april 2003 10 w, 2000 mhz, n-channel e-mode, lateral mosfet test circuit illustrations for AGR21010E, 921 mhz960 mhz a. schematic b. component layout figure 2. AGR21010E test circuit, 921 mhz960 mhz parts list: n microstrip: z1 0.340 in. x 0.066 in. z2 0.230 in. x 0.120 in. z3 0.640 in. x 0.120 in. z4 1.448 in. x 0.400 in. z5 0.080 in. x 0.400 in. z6 0.947 in. x 0.075 in. z7 0.037 in. x 0.200 in. z8 0.138 in. x 0.200 in. z9 0.480 in. x 0.200 in. z10 0.510 in. x 0.066 in. z11 0.225 in. x 0.066 in. z12 0.310 in. x 0.066 in. z13 1.930 in. x 0.040 in. n atc ? chip capacitor: c1, c3, c9, c19: 47 pf 100b470jw250x c18: 4.7 pf 100b3r9bw250x c16: 0.5 pf 100b0r5fw250x c15: 15 pf 100b120fw500x c4, c10: 100 pf 100b101fw250x. n kemet ? 1206 size chip capacitor: c7, c13: 1.0 f c1812105k5ractr . n ceramic capacitors: c5, c11: 0.01 f c6, c12: 0.1 f. n johanson giga-trim ? variable capacitor: c2: 0.8 pf to 8.0 pf, c17 0.6 pf to 4.6 pf. n 1206 size chip resistor: r1 50 . n fair-rite ? ; ferrite bead: fb1 2743019446. n taconic ? orcer rf-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. n sprague ? tantalum surface-mount chip capacitor: c8, c14: 22 f, 35 v. n murata ? 0805 size chip capacitor: c5, c11: 0.01 f grm40x7r103k100al. dut r1 c8 z1 c1 z2 z3 c19 z7 z8 z9 z10 z13 rf input v gg v dd rf output c17 z4 fb1 c7 c6 c5 c4 c3 c18 z5 c9 c10 c11 c13 c12 c14 c15 c2 pins: 1. drain 2. gate 3. source 1 3 2 z6 c16 z12 z11 & 5 & % & & & & & & & & & & & & & & & & &
6 agere systems inc. 10 w, 2000 mhz, n-channel e-mode, lateral mosfet april 2003 AGR21010E preliminary data sheet typical performance characteristics, 921 mhz960 mhz figure 3. series equivalent input and output impedances , 921 mhz960 mhz mhz (f) z s ( complex source impedance ) z l ( complex optimum load impedance ) 921 (f1) 2.01 + j4.67 14.42 + j4.55 940.5 (f2) 2.0 + j4.73 15.38 + j5.07 960 (f3) 1.61+ j4.93 17.28 + j5.71 0.1 0.1 0.1 0.2 0.2 0.2 0.3 0.3 0.4 0.4 0.5 0.5 0.6 0.6 0.7 0.7 0.8 0.8 0.9 0.9 1.0 1.0 1.2 1.2 1.4 1.4 1.6 1.8 2.0 0.2 0.2 0.2 0.4 0.4 0.4 0.6 0.6 0.6 0.8 0.8 0.8 1.0 1.0 1.0 70 80 90 100 110 120 130 140 150 160 -160 170 -170 180 90 -90 85 -85 80 75 70 65 60 55 50 45 40 35 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0.11 0.12 0.13 0.14 0.15 0.35 0.36 0.37 0.38 0.39 0.4 0.41 0.42 0.43 0.44 0.45 0.46 0.47 7 0.48 0.48 0.49 0.49 0.0 0.0 e > w a v e l e n g t h s t o w a r d g e n e r a t o r e > w a v e l e n g t h s t o w a r d l o a d < e i n d u c t i v e r e a c t a n c e c o m p o n e n t ( + j x / z o ) , o r c a p a c i t i v e s u s c e p t a n c e ( + j b / y o ) t a n c e ( - j b / y o ) resistance component (r/zo), or conductance component (g/yo) z s z l f3 f1 z 0 = 50 f1 f3 dut z s z l input match output match drain (1) source (3) gate (2)
agere systems inc. 7 preliminary data sheet AGR21010E april 2003 10 w, 2000 mhz, n-channel e-mode, lateral mosfet typical performance characteristics, 921 mhz960 mhz (continued) figure 4. gain and p out vs. p in (f = 921 mhz) figure 5. gain and p out vs. p in (f = 940.5 mhz) 29.5 30.5 31.5 32.5 33.5 34.5 35.5 36.5 37.5 38.5 39.5 40.5 41.5 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0 21.5 pin (dbm) z pout (dbm) z 18.0 18.5 19.0 19.5 20.0 20.5 21.0 21.5 22.0 22.5 23.0 23.5 24.0 gain (db) z idq = 100 ma, f = 921 mhz pout gain 29.5 30.5 31.5 32.5 33.5 34.5 35.5 36.5 37.5 38.5 39.5 40.5 41.5 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0 21.5 pin (dbm) z pout (dbm) z 18.0 18.5 19.0 19.5 20.0 20.5 21.0 21.5 22.0 22.5 23.0 23.5 24.0 gain (db) z idq = 100 ma, f = 940.5 mhz pout gain
8 agere systems inc. 10 w, 2000 mhz, n-channel e-mode, lateral mosfet april 2003 AGR21010E preliminary data sheet typical performance characteristics, 921 mhz960 mhz (continued) figure 6. gain and p out vs. p in (f = 960 mhz) 29.5 30.5 31.5 32.5 33.5 34.5 35.5 36.5 37.5 38.5 39.5 40.5 41.5 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0 21.5 pin (dbm) z pout (dbm) z 18.0 18.5 19.0 19.5 20.0 20.5 21.0 21.5 22.0 22.5 23.0 23.5 24.0 gain (db) z idq = 100 ma, f = 960 mhz pout gain
agere systems inc. 9 preliminary data sheet AGR21010E april 2003 10 w, 2000 mhz, n-channel e-mode, lateral mosfet edge (enhanced data for global evolution) characterization, 921 mhz960 mhz figure 7. acpr vs. p out acpr data points as illustrated in the performance graph p in p out gain ids drain eff. acp up acp low alt1 up alt1 low alt2 up alt2 low pdc (dbm) (dbm) (db) (a) (%) (dbc) (dbc) (dbc) (dbc) (dbc) (dbc) (w) 0.93 20.83 19.9 0.116 4.016 C37.92 C37.119 C70.688 C69.807 C80.331 C80.216 3.0 1.48 21.46 19.98 0.12 4.492 C37.825 C37.039 C70.429 C69.498 C80.27 C80.185 3.1 1.98 21.96 19.98 0.12 5.04 C37.744 C36.929 C70.057 C69.085 C80.209 C80.04 3.1 2.51 22.51 20.00 0.128 5.37 C37.714 C36.921 C69.773 C68.647 C80.305 C80.233 3.3 3.02 23.07 20.05 0.135 5.756 C37.554 C36.738 C69.24 C68.171 C80.217 C80.474 3.5 3.54 23.63 20.09 0.139 6.365 C37.449 C36.662 C68.73 C67.505 C79.871 C80.242 3.6 4.02 24.19 20.17 0.143 7.043 C37.306 C36.501 C68.114 C66.936 C80.082 C80.251 3.7 4.53 24.76 20.23 0.147 7.818 C37.169 C36.379 C67.526 C66.43 C80.312 C80.085 3.8 5.02 25.33 20.31 0.159 8.257 C37.045 C36.24 C67.011 C65.783 C80.156 C79.869 4.1 5.53 25.91 20.38 0.171 8.788 C36.897 C36.097 C66.244 C65.139 C79.804 C79.831 4.4 6.02 26.49 20.47 0.178 9.603 C36.717 C35.894 C65.595 C64.486 C79.928 C79.758 4.6 6.53 27.08 20.55 0.186 10.539 C36.541 C35.697 C64.929 C63.852 C79.278 C79.7 4.8 6.95 27.59 20.64 0.194 11.374 C36.408 C35.584 C64.35 C63.325 C79.373 C79.193 5.0 7.47 28.18 20.71 0.202 12.525 C36.256 C35.42 C63.702 C62.705 C78.646 C78.753 5.3 7.97 28.77 20.8 0.218 13.316 C36.078 C35.222 C63.038 C62.223 C77.814 C77.978 5.7 8.46 29.37 20.91 0.222 15.019 C35.931 C35.041 C62.475 C61.65 C76.878 C76.994 5.8 8.98 29.98 21.00 0.249 15.383 C35.799 C34.895 C61.933 C61.118 C76.077 C76.28 6.5 9.48 30.56 21.08 0.259 16.894 C35.622 C34.743 C61.327 C60.555 C75.174 C75.447 6.7 9.96 31.15 21.19 0.275 18.226 C35.531 C34.597 C60.805 C60.071 C74.551 C74.652 7.2 10.47 31.73 21.26 0.292 19.618 C35.361 C34.448 C60.332 C59.577 C73.78 C73.848 7.6 10.96 32.31 21.35 0.311 21.051 C35.229 C34.328 C59.87 C59.029 C72.889 C73.073 8.1 11.46 32.88 21.42 0.331 22.553 C35.067 C34.177 C59.628 C58.639 C72.137 C72.257 8.6 12.03 33.55 21.52 0.355 24.536 C34.889 C34.006 C59.375 C58.115 C71.033 C71.129 9.2 12.52 34.11 21.59 0.377 26.284 C34.629 C33.766 C59.055 C57.605 C70.124 C70.295 9.8 13.00 34.67 21.67 0.401 28.111 C34.246 C33.402 C58.421 C56.642 C69.173 C69.509 10.4 -81 -79 -77 -75 -73 -71 -69 -67 -65 -63 -61 -59 -57 -55 -53 -51 -49 -47 -45 -43 -41 -39 -37 -35 -33 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 p out (dbm) s acpr (dbc) s acp (+200 khz) acp (-200 khz) alt 1 (+400khz) alt 1 (-400khz) alt 2 (+600khz) alt 2 (-600khz) agr21010; edge format; frequency = 940.5 mhz typical data v dd = 26 v; i dq = 85.7 ma
10 agere systems inc. 10 w, 2000 mhz, n-channel e-mode, lateral mosfet april 2003 AGR21010E preliminary data sheet test circuit illustrations for AGR21010E, 1 930 mhz 1990 mhz a. schematic b. component layout figure 8. AGR21010E test circuit, 1 930 mhz 1990 mhz parts list: n microstrip: z1 0.230 in. x 0.066 in. z2 0.040 in. x 0.075 in. z3 1.045 in. x 0.075 in. z4 0.300 in. x 0.300 in. z5 0.458 in. x 0.030 in. z6 0.250 in. x 0.200 in. z7 0.300 in. x 0.200 in. z8 0.865 in. x 0.066 in. z9 0.325 in. x 0.066 in. z10 0.947 in. x 0.050 in. n atc ? chip capacitor: c1, c3, c9, c19: 10 pf 100b100fw250x c18: 2 pf 100b2r0bw250x c4, c10: 100 pf 100b101fw250x c15: 1.8 pf 100b1r8fw250x c2: 0.7 pf 100b0r7fw250x. n kemet ? 1206 size chip capacitor: c7, c13: 1.0 f c1812105k5ractr . n ceramic capacitors: c5, c11: 0.01 f c6, c12: 0.1 f. n sprague ? tantalum surface-mount chip capacitor: c8, c14: 22 f, t491x226k035as. n johanson giga-trim ? variable capacitor: c16, c17: 0.6 pf to 4.6 pf. n fair-rite ? ; ferrite bead: fb1 2743019446. n taconic ? orcer rf-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. dut c8 z1 c1 z2 z3 c19 z6 z7 z10 rf input v gg v dd rf output c17 z4 fb1 c7 c6 c5 c4 c3 c18 c9 c10 c11 c13 c12 c14 c15 c2 pins: 1. drain 2. gate 3. source 1 3 2 z5 z9 z8 c16 & & % & & & & & & & & & & & & & & & & &
agere systems inc. 11 preliminary data sheet AGR21010E april 2003 10 w, 2000 mhz, n-channel e-mode, lateral mosfet typical performance characteristics, 1 930 mhz 1990 mhz figure 9. series equivalent input and output impedances, 1 930 mhz 1990 mhz mhz (f) z s ( complex source impedance ) z l ( complex optimum load impedance ) 1930 (f1) 2.79 C j4.29 5.79 + j3.17 1960 (f2) 2.57 C j3.95 5.71 + j2.76 1990 (f3) 2.39 C j3.24 5.70 + j3.29 0.1 0.1 0.1 0.2 0.2 0.2 0.3 0.3 0.4 0.4 0.5 0.5 0.6 0.6 0.7 0.7 0.8 0.8 0.9 0.9 1.0 1.0 1.2 1.2 1.4 1.4 1.6 1.8 2.0 0.2 0.2 0.2 0.4 0.4 0.4 0.6 0.6 0.6 0.8 0.8 0.8 1.0 1.0 1.0 70 80 90 100 110 120 130 140 150 160 -160 170 -170 180 90 -90 85 -85 80 75 70 65 60 55 50 45 40 35 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0.11 0.12 0.13 0.14 0.15 0.35 0.36 0.37 0.38 0.39 0.4 0.41 0.42 0.43 0.44 0.45 0.46 0.47 7 0.48 0.48 0.49 0.49 0.0 0.0 e > w a v e l e n g t h s t o w a r d g e n e r a t o r e > w a v e l e n g t h s t o w a r d l o a d < e i n d u c t i v e r e a c t a n c e c o m p o n e n t ( + j x / z o ) , o r c a p a c i t i v e s u s c e p t a n c e ( + j b / y o ) t a n c e ( - j b / y o ) resistance component (r/zo), or conductance component (g/yo) z l f3 f1 z 0 = 20 z l f3 f1 dut z s z l input match output match drain (1) source (3) gate (2)
12 agere systems inc. 10 w, 2000 mhz, n-channel e-mode, lateral mosfet april 2003 AGR21010E preliminary data sheet typical performance characteristics, 1 930 mhz 1990 mhz (continued) figure 10. gain and p out vs. p in (f = 1930 mhz) figure 11. gain and p out vs. p in (f = 1960 mhz) 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 42.0 44.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 p in (dbm) z p out (dbm) z 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 gain (db) z i dq = 97 ma, at f = 1930 mhz p out gain 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 42.0 44.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 p in (dbm) z p out (dbm) z 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 gain (db) z i dq = 97 ma, at f = 1960 mhz p out gain
agere systems inc. 13 preliminary data sheet AGR21010E april 2003 10 w, 2000 mhz, n-channel e-mode, lateral mosfet typical performance characteristics, 1 930 mhz 1990 mhz (continued) figure 12. gain and p out vs. p in (f = 1990 mhz) 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 42.0 44.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 p in (dbm) z p out (dbm) z 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 gain (db) z i dq = 97 ma, at f = 1990 mhz gain p out
14 14 agere systems inc. 10 w, 2000 mhz, n-channel e-mode, lateral mosfet april 2003 AGR21010E preliminary data sheet test circuit illustrations for AGR21010E, 2110 mhz 2170 mhz a. schematic b. component layout figure 13. AGR21010E test circuit, 2110 mhz 2170 mhz preliminary layout parts list: n microstrip: z1 0.230 in. x 0.066 in. z2 0.040 in. x 0.075 in. z3 1.075 in. x 0.075 in. z4 0.270 in. x 0.300 in. z5 0.420 in. x 0.050 in. z6 0.250 in. x 0.200 in. z7 0.310 in. x 0.200 in. z8 0.855 in. x 0.066 in. z9 0.325 in. x 0.066 in. z10 0.835 in. x 0.050 in. n atc ? chip capacitor: c3, c9: 8.2 pf 100b8r2fw250x c1, c19: 8.2 pf 100b8r2fw250x c18: 2 pf 100b2r0bw250x c4, c10: 100 pf 100b101fw250x c15: 1.8 pf 100b1r8fw250x c2: 1.0 pf 100b1r0fw250x. n kemet ? 1206 size chip capacitor: c7, c13: 1.0 f c1812105k5ractr . n ceramic capacitors: c5, c11: 0.01 f c6, c12: 0.1 f. n sprague ? tantalum surface-mount chip capacitor: c8, c14: 22 f, t491x226k035as. n johanson giga-trim ? variable capacitor: c16, c17: 0.6 pf to 4.6 pf. n fair-rite ? ; ferrite bead: fb1 2743019446. n taconic ? orcer rf-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. dut c8 z1 c1 z2 z3 c19 z6 z7 z10 rf input v gg v dd rf output c17 z4 fb1 c7 c6 c5 c4 c3 c18 c9 c10 c11 c13 c12 c14 c15 c2 pins: 1. drain 2. gate 3. source 1 3 2 z5 z9 z8 c16 & & % & & & & & & & & & & & & & & & & &
agere systems inc. 15 preliminary data sheet AGR21010E april 2003 10 w, 2000 mhz, n-channel e-mode, lateral mosfet typical performance characteristics, 2110 mhz 2170 mhz figure 14. series equivalent input and output impedances, 2110 mhz 2170 mhz mhz (f) z s ( complex source impedance ) z l ( complex optimum load impedance ) 2110 (f1) 1.66 C j6.53 4.45 C j3.27 2140 (f2) 1.95 C j3.79 4.33 C j3.02 2170 (f3) 1.88 C j5.61 4.54 C j4.77 0.1 0.1 0.1 0.2 0.2 0.2 0.3 0.3 0.4 0.4 0.5 0.5 0.6 0.6 0.7 0.7 0.8 0.8 0.9 0.9 1.0 1.0 1.2 1.2 1.4 1.4 1.6 1.8 2.0 0.2 0.2 0.2 0.4 0.4 0.4 0.6 0.6 0.6 0.8 0.8 0.8 1.0 1.0 1.0 70 80 90 100 110 120 130 140 150 160 -160 170 -170 180 90 -90 85 -85 80 75 70 65 60 55 50 45 40 35 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0.11 0.12 0.13 0.14 0.15 0.35 0.36 0.37 0.38 0.39 0.4 0.41 0.42 0.43 0.44 0.45 0.46 0.47 7 0.48 0.48 0.49 0.49 0.0 0.0 e > w a v e l e n g t h s t o w a r d g e n e r a t o r e > w a v e l e n g t h s t o w a r d l o a d < e i n d u c t i v e r e a c t a n c e c o m p o n e n t ( + j x / z o ) , o r c a p a c i t i v e s u s c e p t a n c e ( + j b / y o ) t a n c e ( - j b / y o ) resistance component (r/zo), or conductance component (g/yo) z s z l f3 f1 z 0 = 40 f1 f3 dut z s z l input match output match drain (1) source (3) gate (2)
16 16 agere systems inc. 10 w, 2000 mhz, n-channel e-mode, lateral mosfet april 2003 AGR21010E preliminary data sheet typical performance characteristics, 2110 mhz 2170 mhz (continued) figure 15. gain and p out vs. p in (f = 2110 mhz) figure 16. gain and p out vs. p in (f = 2140 mhz) 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 42.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 p in (dbm) z p out (dbm) z 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 gain (db) z i dq = 94 ma, 19.8 mm cell, at f = 2110 mhz p out gain 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 42.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 p in (dbm) z p out (dbm) z 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 gain (db) z i dq = 94 ma, 19.8 mm cell, at f = 2140 mhz p out gain
agere systems inc. 17 preliminary data sheet AGR21010E april 2003 10 w, 2000 mhz, n-channel e-mode, lateral mosfet typical performance characteristics, 2110 mhz 2170 mhz (continued) figure 17. gain and p out vs. p in (f = 2170 mhz) 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 42.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 p in (dbm) z p out (dbm) z 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 gain (db) z i dq = 94 ma, 19.8 mm cell, at f = 2170 mhz p out gain
copyright ? 2003 agere systems inc. all rights reserved april 2003 ds03-038rfpp (replaces ds02-381rfpp) agere systems inc. reserves the right to make changes to the product(s) or information contained herein without notice. no liab ility is assumed as a result of their use or application. agere, agere systems, and the agere logo are trademarks of agere systems inc. fair-rite is a registered trademark of fair-rite products corporation. johanson and giga-trim are registered trademarks of johanson manufacturing corporation. atc is a registered trademark of american technical ceramics corp. kemet is a registered trademark of krc trade corporation. sprague is a registered trademark of sprague electric company corporation. taconic is a registered trademark of tonoga limited dba taconic plastics ltd. for additional information, contact your agere systems account manager or the following: internet: http://www.agere.com e-mail: docmaster@agere.com n. america: agere systems inc., lehigh valley central campus, room 10a-301c, 1110 american parkway ne, allentown, pa 18109-9138 1-800-372-2447 , fax 610-712-4106 (in canada: 1-800-553-2448 , fax 610-712-4106) asia: agere systems hong kong ltd., suites 3201 & 3210-12, 32/f, tower 2, the gateway, harbour city, kowloon tel. (852) 3129-2000 , fax (852) 3129-2020 china: (86) 21-5047-1212 (shanghai), (86) 755-25881122 (shenzhen) japan: (81) 3-5421-1600 (tokyo), korea: (82) 2-767-1850 (seoul), singapore: (65) 6778-8833 , taiwan: (886) 2-2725-5858 (taipei) europe: tel. (44) 1344 296 400 10 w, 2000 mhz, n-channel e-mode, lateral mosfet april 2003 AGR21010E preliminary data sheet package dimensions all dimensions are in inches. tolerances are 0.005 in. unless specified. cut lead denotes drain. AGR21010Eu ordering information device code package availability comcode AGR21010E AGR21010Eu (surface-mount) tape and reel 700047348

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