power transistor arrays 1 publication date: march 2004 sjk00058aed parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = 30 ma, i b = 060 v base-emitter voltage v be v ce = 4 v, i c = 3 a 1.8 v collector-emitter current (e-b short) i ces v ce = 60 v, v be = 0 200 a collector-emitter cutoff current (base open) i ceo v ce = 30 v, i b = 0 300 a emitter-base cutoff current (collector open) i ebo v eb = 6 v, i c = 01ma forward current transfer ratio h fe1 v ce = 4 v, i c = 1 a 70 250 ? h fe2 v ce = 4 v, i c = 3 a 10 collector-emitter saturation voltage v ce(sat) i c = 3 a, i b = 0.375 a 1.2 v transition frequency f t v ce = 10 v, i c = 0.5 a, f = 10 mhz 30 mhz turn-on time t on i c = 1 a 0.5 s storage time t stg i b1 = 0.1 a, i b2 = ? 0.1 a 2.5 s fall time t f v cc = 50 v 0.4 s pub4110 (pu4110) , PUB4410 (pu4410) silicon npn triple diffusion planar type for power amplification/switching complementary to pub4210 (pu4210), pub4510 (pu4510) features ? high forward current transfer ratio h fe which has satisfactory linearity ? low collector-emitter saturation voltage v ce(sat) ? pub4110 (pu4110): npn 4 elements PUB4410 (pu4410): npn 2 elements 2 absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. parameter symbol rating unit collector-base voltage (emitter open) v cbo 60 v collector-emitter voltage (base open) v ceo 60 v emitter-base voltage (collector open) v ebo 6v collector current i c 3a peak collector current i cp 5a base current i b 1a collector power dissipation p c 15 w t a = 25 c 3.5 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c note) the part numbers in the parenthesis show conventional part number. unit: mm 1: emitter 2: base 3: collector 4: base 5: collector 6: base 7: collector 8: base 9: collector 10: emitter sip10-a1 package internal connection ? pub4110 ? PUB4410 25.3 0.2 9 2.54 = 22.86 0.25 0.5 0.15 c 1.5 0.5 12345678910 1.0 0.25 2.54 0.2 9.5 0.2 1.65 0.2 8.0 0.2 4.4 0.5 solder dip 5.3 0.5 4.0 0.2 0.8 0.25 0.5 0.15 110 2 3 4 5 8 9 6 7 110 2 3 4 5 8 9 6 7
pub4110, PUB4410 2 sjk00058aed v ce(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce i c ? v be c ob ? v cb safe operation area 0 160 80 120 40 0 20 16 12 4 8 ( 1 ) t c = t a ( 2 ) with a 50 50 2 mm al heat sink ( 3 ) without heat sink ( 1 ) ( 2 ) ( 3 ) collector power dissipation p c ( w ) ambient temperature t a ( c ) 012 10 8 26 4 0 1 2 3 4 5 t c = 25 c i b = 100 ma 20 ma 30 ma 10 ma 90 ma 80 ma 70 ma 60 ma 50 ma 40 ma collector current i c ( a ) collector-emitter voltage v ce ( v ) v ce = 4 v 0 2.4 2.0 1.6 0.4 1.2 0.8 0 8 6 4 2 25 c ? 25 c t c = 100 c base-emitter voltage v be ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.01 100 i c / i b = 8 0.1 1 10 ? 25 c t c = 100 c 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) 0.01 0.1 1 10 1 10 4 v ce = 4 v 10 10 2 10 3 collector current i c ( a ) forward current transfer ratio h fe ? 25 c t c = 100 c 25 c 0.01 0.1 1 10 1 10 4 v ce = 5 v t c = 25 c 10 10 2 10 3 transition frequency f t ( mhz ) collector current i c ( a ) 0.1 1 10 100 1 10 4 10 10 2 10 3 i e = 0 f = 1 mhz t c = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb ( v ) 1 10 100 1 000 0.01 0.1 1 10 100 non repetitve pulse t c = 25 c ( per circuit ) t = 10 ms t = 1 ms i cp collector current i c ( a ) collector-emitter voltage v ce ( v )
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