?2002 fairchild semiconductor corporation january 2002 ISL9K460P3 rev. b ISL9K460P3 ISL9K460P3 4a, 600v stealth? dual diode general description the ISL9K460P3 is a stealth? dual diode optimized for low loss performance in high frequency hard switched applications. the stealth? family exhibits low reverse recovery current (i rrm ) and exceptionally soft recovery under typical operating conditions. this device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. the low i rrm and short t a phase reduce loss in switching transistors. the soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. consider using the stealth? diode with an smps igbt to provide the most ef?cient and highest power density design at lower cost. formerly developmental type ta49408. features ? soft recovery. . . . . . . . . . . . . . . . . . . . . t b / t a > 3 ? fast recovery . . . . . . . . . . . . . . . . . . . . t rr < 20ns ? operating temperature . . . . . . . . . . . . . . . 175 o c ? reverse voltage. . . . . . . . . . . . . . . . . . . . . . 600v ? avalanche energy rated applications ? switch mode power supplies ? hard switched pfc boost diode ? ups free wheeling diode ? motor drive fwd ? smps fwd ? snubber diode device maximum ratings ( per leg) t c = 25c unless otherwise noted symbol parameter ratings units v rrm peak repetitive reverse voltage 600 v v rwm working peak reverse voltage 600 v v r dc blocking voltage 600 v i f(av) average recti?ed forward current total device current (both legs) 4 8 a a i frm repetitive peak surge current (20khz square wave) 8 a i fsm nonrepetitive peak surge current (halfwave 1 phase 60hz) 50 a p d power dissipation 58 w e avl avalanche energy (1a, 20mh) 10 mj t j , t stg operating and storage temperature range -55 to 175 ?c t l t pkg maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10s package body for 10s, see techbrief tb334 300 260 ?c ?c caution: stresses above those listed in absolute maximum ratings may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speci?cation is not implied. jedec to-220ab a 1 k a 2 cathode (flange) cathode anode 2 anode 1 package symbol
?2002 fairchild semiconductor corporation ISL9K460P3 rev. b ISL9K460P3 package marking and ordering information electrical characteristics ( per leg) t c = 25c unless otherwise noted off state characteristics on state characteristics dynamic characteristics switching characteristics thermal characteristics device marking device package tape width quantity k460p3 ISL9K460P3 to-220ab - - symbol parameter test conditions min typ max units i r instantaneous reverse current v r = 600v t c = 25?c - - 100 a t c = 125?c - - 1.0 ma v f instantaneous forward voltage i f = 4a t c = 25?c - 2.0 2.4 v t c = 125?c - 1.6 2.0 v c j junction capacitance v r = 10v, i f = 0a - 19 - pf t rr reverse recovery time i f = 1a, d if /dt = 100a/ s, v r = 30v - 17 20 ns i f = 4a, d if /dt = 100a/ s, v r = 30v - 19 22 ns t rr reverse recovery time i f = 4a, d if /dt = 200a/ s, v r = 390v, t c = 25?c -17-ns i rrm maximum reverse recovery current - 2.6 - a q rr reverse recovery charge - 22 - nc t rr reverse recovery time i f = 4a, d if /dt = 200a/ s, v r = 390v, t c = 125?c -77-ns s softness factor (t b /t a )-4.2- i rrm maximum reverse recovery current - 2.8 - a q rr reverse recovery charge - 100 - nc t rr reverse recovery time i f = 4a, d if /dt = 400a/ s, v r = 390v, t c = 125?c -54-ns s softness factor (t b /t a )-3.5- i rrm maximum reverse recovery current - 4.3 - a q rr reverse recovery charge 110 - nc di m /dt maximum di/dt during t b - 500 - a/s r jc thermal resistance junction to case - - 2.6 ?c/w r ja thermal resistance junction to ambient to-220ab - - 62 ?c/w
?2002 fairchild semiconductor corporation ISL9K460P3 rev. b ISL9K460P3 typical performance curves figure 1.forward current vs forward voltage figure 2.reverse current vs reverse voltage figure 3.t a and t b curves vs forward current figure 4.t a and t b curves vs di f /dt figure 5.maximum reverse recovery current vs forward current figure 6.maximum reverse recovery current vs di f /dt v f , forward voltage (v) i f , forward current (a) 0 0.5 1 1.5 2 2.5 0 1 2 3 4 5 6 7 8 3 25 o c 175 o c 100 o c 150 o c v r , reverse voltage (v) i r , reverse current ( a) 100 10 1 100 200 300 500 600 400 0.1 600 25 o c 175 o c 150 o c 125 o c 100 o c 75 o c i f , forward current (a) 0 20 30 40 50 70 58 t, recovery times (ns) 80 90 1234 67 v r = 390v, t j = 125 o c t b at di f /dt = 200a/s, 500a/s, 800a/s t a at di f /dt = 200a/s, 500a/s, 800a/s 60 10 di f /dt, current rate of change (a/ s) 100 0 20 40 60 80 700 1000 t, recovery times (ns) 200 300 400 500 600 800 900 100 120 v r = 390v, t j = 125 o c t b at i f = 8a, 4a, 2a t a at i f = 8a, 4a, 2a i f , forward current (a) 1 2 3 4 5 6 7 8 i rrm , max reverse recovery current (a) di f /dt = 800a/s di f /dt = 500a/s di f /dt = 200a/s v r = 390v, t j = 125 o c 2345678 di f /dt, current rate of change (a/ s) 100 1 2 3 4 5 6 700 1000 i rrm , max reverse recovery current (a) v r = 390v, t j = 125 o c i f = 8a i f = 2a 7 8 200 300 400 500 600 800 900 i f = 4a
?2002 fairchild semiconductor corporation ISL9K460P3 rev. b ISL9K460P3 figure 7.reverse recovery softness factor vs di f /dt figure 8.reverse recovery charge vs di f /dt figure 9. junction capacitance vs reverse voltage figure 10. normalized maximum transient thermal impedance typical performance curves (continued) di f /dt, current rate of change (a/ s) 100 1 2 3 4 5 6 700 1000 v r = 390v, t j = 125 o c i f = 4a i f = 8a i f = 2a s, reverse recovery softness factor 200 300 400 500 600 800 900 di f /dt, current rate of change (a/ s) 60 80 100 120 140 160 180 q rr , reverse recovery charge (nc) 100 700 1000 200 300 400 500 600 800 900 v r = 390v, t j = 125 o c i f = 8a i f = 4a i f = 2a v r , reverse voltage (v) c j , junction capacitance (pf) 0 200 400 600 800 1000 1600 100 1.0 0.03 0.1 10 1200 1400 1800 t, rectangular pulse duration (s) 10 -5 10 -2 10 -1 z ja , normalized thermal impedance 0.01 10 -4 10 -3 single pulse 10 0 0.1 10 1 duty cycle - descending order 0.5 0.2 0.1 0.05 0.01 0.02 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a p dm t 1 t 2 1.0
?2002 fairchild semiconductor corporation ISL9K460P3 rev. b ISL9K460P3 test circuit and waveforms figure 11. it rr test circuit figure 12.t rr waveforms and definitions figure 13. avalanche energy test circuit figure 14.avalanche current and voltage waveforms r g l v dd mosfet current sense dut v ge t 1 t 2 v ge amplitude and t 1 and t 2 control i f r g control di f /dt + - dt di f i f t rr t a t b 0 i rm 0.25 i rm dut current sense + lr v dd r < 0.1 ? e avl = 1/2li 2 [v r(avl) /(v r(avl) - v dd )] q 1 = igbt (bv ces > dut v r(avl) ) - v dd q 1 i = 1a l = 20mh vdd = 50v iv t 0 t 1 t 2 i l v avl t i l
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