power transistors 1 publication date: february 2003 sjd00118bed 2SC3974 silicon npn triple diffusion planar type for high breakdown voltage high-speed switching features ? high-speed switching ? high collector-base voltage (emitter open) v cbo ? wide safe operation area ? satisfactory linearity of forward current transfer ratio h fe ? full-pack package which can be installed to the heat sink with one screw absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c unit: mm note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = 10 ma, i b = 0 500 v collector-base cutoff current (emitter open) i cbo v cb = 800 v, i e = 0 100 a emitter-base cutoff current (collector open) i ebo v eb = 5 v, i c = 0 100 a forward current transfer ratio h fe1 v ce = 5 v, i c = 0.1 a 15 ? h fe2 v ce = 5 v, i c = 4 a 8 collector-emitter saturation voltage v ce(sat) i c = 4 a, i b = 0.8 a 1.0 v base-emitter saturation voltage v be(sat) i c = 4 a, i b = 0.8 a 1.5 v transition frequency f t v ce = 10 v, i c = 0.5 a, f = 1 mhz 20 mhz turn-on time t on i c = 4 a 1.0 s storage time t stg i b1 = 0.8 a, i b2 = ? 1.6 a 3.0 s fall time t f v cc = 200 v 0.3 s parameter symbol rating unit collector-base voltage (emitter open) v cbo 800 v collector-emitter voltage (e-b short) v ces 800 v collector-emitter voltage (base open) v ceo 500 v emitter-base voltage (collector open) v ebo 8v base current i b 4a collector current i c 7a peak collector current i cp 15 a collector power dissipation p c 80 w t a = 25 c 3.0 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c 1: base 2: collector 3: emitter eiaj: sc-92 top-3f-a1 package 15.0 0.3 5.0 0.2 11.0 0.2 2.0 0.2 2.0 0.1 0.6 0.2 1.1 0.1 5.45 0.3 10.9 0.5 123 21.0 0.5 16.2 0.5 solder dip (3.5) 15.0 0.2 (0.7) 3.2 0.1 (3.2)
2SC3974 2 sjd00118bed p c ? t a i c ? v ce v ce(sat) ? i c v be(sat) ? i c h fe ? i c f t ? i c c ob ? v cb t on , t stg , t f ? i c safe operation area 0 160 40 120 80 0 120 100 80 60 40 20 collector power dissipation p c (w) ambient temperature t a ( c) (1) (3) (2) (1)t c =ta (2)with a 100 100 2mm al heat sink (3)without heat sink (p c =3w) 0 012 48 12 10 8 6 4 2 collector current i c (a) collector-emitter voltage v ce (v) t c =25?c 50ma 40ma 30ma 20ma 10ma 5ma i b =90ma 0.01 0.1 0.1 1 10 100 1 10 100 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) i c /i b =5 ?25?c 25?c t c =100?c 0.1 0.1 1 10 100 1 10 100 base-emitter saturation voltage v be(sat) (v) collector current i c (a) i c /i b =5 t c =?25?c 25?c 100?c 0.1 1 10 100 1 1 000 100 10 forward current transfer ratio h fe collector current i c (a) v ce =5v ?25?c t c =100?c 25?c 0.01 0.1 1 10 1 1 000 100 10 collector current i c (a) transition frequency f t (mhz) v ce =10v f=1mhz t c =25?c 1 10 100 10 10 4 10 3 10 2 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) i e =0 f=1mhz t c =25?c 0.01 0.1 1 10 100 08 26 4 turn-on time t on , storage time t stg , fall time t f ( s ) collector current i c (a) t stg t f t on pulsed t w =1ms duty cycle=1% i c /i b =5 (2i b1 =? b2 ) v cc =200v t c =25?c 0.01 1 0.1 1 10 100 10 100 1 000 collector current i c (a) collector-emitter voltage v ce (v) non repetitive pulse t c =25?c i cp i c dc t=10ms t=1ms t=0.5ms
2SC3974 3 sjd00118bed safe operation area (reverse bias) safe operation area (reverse bias) measuring circuit r th ? t l i c i b1 v in t w ? i b2 v clamp v cc t.u.t 0 2 6 4 8 0 800 200 600 400 peak collector current i cp (a) collector-emitter voltage v ce (v) l=30? i c /i b =5 (2i b1 =? b2 ) v cc =200v t c 100?c 10 ? 1 1 10 10 2 10 4 10 3 10 4 10 3 10 2 10 1 10 ? 1 10 ? 3 10 ? 2 10 ? 4 time t (s) thermal resistance r th ( c/w) note: r th was measured at ta=25?c and under natural convection. (1)p t =10v 0.3a(3w) and without heat sink (2)p t =10v 1.0a(10w) and with a 100 100 2mm al heat sink (1) (2)
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