? 2003 ixys all rights reserved ixfe 180n20 v dss = 200 v i d25 = 158 a r ds(on) = 12 m ? ? ? ? ? t rr < 250 ns features ? conforms to sot-227b outline low r ds (on) hdmos tm process rugged polysilicon gate cell structure unclamped inductive switching (uis) rated low package inductance fast intrinsic rectifier encapsulating epoxy meets ul 94 v-0, flammability classification applications dc-dc converters battery chargers switched-mode and resonant-mode power supplies dc choppers temperature and lighting controls advantages easy to mount space savings high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3 ma 200 v v gh(th) v ds = v gs , i d = 8 ma 2 4 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 12 m ? pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 200 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 200 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c, chip capability 158 a i l(rms) terminal current limit 100 a i dm t c = 25 c, pulse width limited by t jm 720 a i ar t c = 25 c 100 a e ar t c = 25 c64mj e as t c = 25 c4j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 500 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.5/13 nm/lb.in. weight 19 g hiperfet tm power mosfets single die mosfet n-channel enhancement mode avalanche rated, high dv/dt, low t rr preliminary data sheet ds99040(04/03) d s g s g = gate d = drain s = source either source terminal at minibloc can be used as main or kelvin source isoplus 227 tm (ixfe) s g s d
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 ixfe 180n20 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 15 v; i d = 60a, pulse test 70 95 s c iss 14400 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 3200 pf c rss 960 pf t d(on) 55 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 85 ns t d(off) r g = 1 ? (external), 180 n s t f 36 ns q g(on) 380 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 100 nc q gd 170 nc r thjc 0.25 k/w r thck 0.05 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 180 a i sm repetitive; 720 a pulse width limited by t jm v sd i f = 100a, v gs = 0 v, 1.2 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 50a, -di/dt = 100 a/ s, v r = 100 v t j = 25 c 250 ns q rm t j = 25 c 1.5 c i rm 10 a isoplus-227 b
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