APTGF300A120D3G APTGF300A120D3G ? rev 0 september, 2008 www.microsemi.com 1-5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 420 i c continuous collector current t c = 80c 300 i cm pulsed collector current t c = 25c 600 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 2100 w rbsoa reverse bias safe operating area t j = 125c 600a@1150v these devices are sens itive to electrostatic discharge. prope r handling procedures should be followe d. see application note apt0502 on www.microsemi.com 2 1 3 5 q2 7 6 q1 4 v ces = 1200v i c = 300a @ tc = 80c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? non punch through (npt) fast igbt - low voltage drop - low tail current - switching frequency up to 50 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? high level of integration ? m6 power connectors benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? rohs compliant phase leg npt igbt power module
APTGF300A120D3G APTGF300A120D3G ? rev 0 september, 2008 www.microsemi.com 2-5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 5 ma t j = 25c 3.2 3.7 v ce(on) collector emitter on voltage v ge = 15v i c = 300a t j = 125c 3.9 v v ge(th) gate threshold voltage v ge = v ce , i c = 12 ma 5.2 5.8 6.4 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 19 c res reverse transfer capacitance v ge = 0v, v ce = 25v f = 1mhz 1.4 nf q g gate charge v ge =15v, i c =300a v ce =600v 3 c t d(on) turn-on delay time 100 t r rise time 60 t d(off) turn-off delay time 530 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 200a r g = 3.3 30 ns t d(on) turn-on delay time 110 t r rise time 70 t d(off) turn-off delay time 550 t f fall time inductive switching (125c) v ge = 15v v bus = 600v i c = 200a r g = 3.3 40 ns e on turn on energy t j = 125c 25 e off turn off energy v ge = 15v v bus = 600v i c = 300a r g = 3.3 t j = 125c 21 mj i sc short circuit data v ge 15v ; v bus = 900v t p 10s ; t j = 125c 2000 a reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 750 i rrm maximum reverse leakage current v r =1200v t j = 125c 1000 a i f dc forward current tc = 80c 300 a t j = 25c 2.1 v f diode forward voltage i f = 300a t j = 125c 1.9 v t j = 25c 120 t rr reverse recovery time t j = 125c 210 ns t j = 25c 19 q rr reverse recovery charge t j = 125c 53 c t j = 25c 7 e rr reverse recovery energy i f = 300a v r = 600v di/dt =4500a/s t j = 125c 15 mj
APTGF300A120D3G APTGF300A120D3G ? rev 0 september, 2008 www.microsemi.com 3-5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.06 r thjc junction to case thermal resistance diode 0.12 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 125 c for terminals m6 3 5 torque mounting torque to heatsink m6 3 5 n.m wt package weight 350 g d3 package outline (dimensions in mm) 1 a dtail a
APTGF300A120D3G APTGF300A120D3G ? rev 0 september, 2008 www.microsemi.com 4-5 typical performance curve * output characteristics (v ge =15v) t j =25c t j =125c 0 150 300 450 600 0123456 v ce (v) i c (a) output characteristics v ge =15v v ge =12v v ge =20v v ge =9v 0 150 300 450 600 0123456 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c 0 150 300 450 600 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff err 0 20 40 60 80 0 150 300 450 600 i c (a) e (mj) v ce = 600v v ge = 15v r g = 3.3 ? t j = 125c eon eoff err 0 20 40 60 80 100 120 0 5 10 15 20 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 300a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 150 300 450 600 750 0 300 600 900 1200 1500 v ce (v) i c (a) v ge =15v t j =125c r g =3.3 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGF300A120D3G APTGF300A120D3G ? rev 0 september, 2008 www.microsemi.com 5-5 forward characteristic of diode t j =25c t j =125c 0 150 300 450 600 0 0.5 1 1.5 2 2.5 3 v f (v) i f (a) zcs hard switching zvs 0 10 20 30 40 50 60 70 0 100 200 300 400 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =3.3 ? t j =125c t c =75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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