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| jmnic product specification silicon npn power transistors 2N6653 description ? with to-3 package ? high voltage capability ? fast switching speeds ? low saturation voltage applications ? switcing regulators ? inverters ? solenoid and relay drivers ? deflection circuits pinning (see fig.2) pin description 1 base 2 emitter 3 collector maximun ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 350 v v ceo collector-emitter voltage open base 300 v v ebo emitter-base voltage open collector 6 v i c collector current 20 a i cm collector current-peak 30 a p t total power dissipation t c =25 ?? 150 w t j junction temperature 200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 1.0 ?? /w fig.1 simplified outline (to-3) and symbol
jmnic product specification 2 silicon npn power transistors 2N6653 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ; i b =0 300 v v (br)cbo collector-emitter breakdown voltage i c =1ma ; i e =0 350 v v cesat-1 collector-emitter saturation voltage i c =10a; i b =2a 1.5 v v cesat-2 collector-emitter saturation voltage i c =15a; i b =3a 1.8 v v besat base-emitter saturation voltage i c =15a; i b =3a 1.8 v i cev collector cut-off current v ce =350v;v be(off) =-1.5v t c =150 ?? 0.1 2.0 ma i ebo emitter cut-off current v eb =6v; i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =5v 15 50 h fe -2 dc current gain i c =15a ; v ce =5v 10 f t transition frequency i c =0.5a ; v ce =10v 15 mhz jmnic product specification 3 silicon npn power transistors 2N6653 package outline fig.2 outline dimensions |
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