2009. 2. 10 1/3 semiconductor technical data ktk5162s revision no : 1 ultra-high speed switching applications analog switch applications features ? high speed. ? small package. ? enhancement-mode. maximum ratings (ta=25 ? ) dim millimeters 1. source 2. gate 3. drain sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p 7 + _ electrical characteristics (ta=25 ? ) type name marking lot no. kf n channel mos field effect transistor d g s this transistor is electrostatic sensitive device. please handle with caution. equivalent circuit characteristic symbol test condition min. typ. max. unit gate leakage current i gss v gs = ?? 16v, v ds =0v - - ?? 1 a drain-source breakdown voltage v (br)dss i d =100 a, v gs =0v 60 - - v drain cut-off current i dss v ds =60v, v gs =0v - - 1 a gate threshold voltage v th v ds =10v, i d =0.1ma 1 - 2.4 v forward transfer admittance |y fs | v ds =10v, i d =50ma 100 - - ms drain-source on resistance r ds(on) i d =50ma, v gs =10v - 3 7.5 ? input capacitance c iss v ds =10v, v gs =0v, f=1mhz - 6.2 - pf reverse transfer capacitance c rss v ds =10v, v gs =0v, f=1mhz - 1.5 - pf output capacitance c oss v ds =10v, v gs =0v, f=1mhz - 4.4 - pf switching time turn-on time t on v dd =25v, i d =50ma, v gs =0 ?- 10v - 0.021 - s turn-off time t off - 0.18 - s characteristic symbol rating unit drain-source voltage v ds 60 v gate-source voltage v gss ?? 20 v dc drain current i d 100 ma drain power dissipation p d 200 mw channel temperature t ch 150 ? storage temperature range t stg -55 ?- 150 ?
2009. 2. 10 2/3 ktk5162s revision no : 1 drain-source voltage v (v) drain current i (a) d 0 ds 0 i - v dds drain current i (a) forward transfer admittance 0.01 0.03 d y - i drain-source voltage v (v) drain current i (a) d gs 0.2 common source ta=25 c v =2.0v gs 0.02 0 0 1 v =10v ds common source fs d fs y (s) 0.03 0.05 0.1 0.3 0.05 0.1 0.3 0.5 1 common source v =10v ds 0.4 0.6 0.8 1.0 0.02 0.04 0.06 0.08 0.10 2.5v 3.0v 4.0v 6.0v 10v 8.0v 2345 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 i - v gs d forward current i (a) diode forward votage v (v) sd f i - v fsd drain source on-state resistance r ( ?) drain current i (ma) d ds(on) r - i ds(on) d ta=-25 c capacitance c (pf) 0.5 drain-source voltage v (v) ds c - v ds 1 3 5 10 30 v =0 f=1mhz ta=25 c gs 5 0101520253 035 404550 common source c iss c oss rss c ta= -25 c ta=25 c ta=75 c ta=25 c ta= 75 c 5 10 30 50 v =4v ta=25 c gs common source 0.01 0.03 0.05 0.1 0.3 v =0 ta= 75 c gs 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 common source ta=25 c ta=-25 c 30 1 0.3 0.5 3 5 10
2009. 2. 10 3/3 ktk5162s revision no : 1 switching time t (ns) d t - i off d.u. 1% pw=10 s 10v 50 ? in v = < switching time test circuit t v =25v dd 0.01 0.03 0.1 0.05 v =10v gs f t r t on t drain current i (a) d v =25v dd i =50ma d r =500 ? l v out ktk5162s d g s p.g 0v in v p - ta d ambient temperature ta ( c) 02040 50 d 0 drain power dissipation p (mw) 60 80 100 120 140 160 100 150 200 250 300 350 5 10 30 50 100 300 500 1k
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