w w w w cd10c60 cd10c60 cd10c60 cd10c60 rev.a oct .2010 copyright@winsemi semiconductor co., ltd., all right reserved. silicon silicon silicon silicon controlled controlled controlled controlled rectifiers rectifiers rectifiers rectifiers features ? repetitive peak off-state voltage:600v ? r.m.s on-state current (it (rms) =10a) ? low on-state voltage(1.4v(typ.)@i tm ) ? non-isolation type general description standard gate triggering scr is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system absolute maximum ratings (t j = 25 c unless otherwise specified ) symbol parameter condition value units v drm repetitive peak off-state voltage 600 v i t(av) average on-state current half sine wave: t c = 111 c 6.4 a i t(rms) r.m.s on-state current 180 conduction angle 10 a i tsm surge on-state current 1/2 cycle,60hz,sine wave non-repetitive 110 a i 2 t i 2 t for fusing t= 8.3 ms 60 a 2 s di/dt critical rate of rise of on-state current 50 a/ ? p gm forward peak gate power dissipation 5 w p g(av) forward average gate power dissipation 0.5 w i fgm forward peak gate current 2 a v rgm reverse peak gate voltage 5.0 v t j operating junction temperature -40~125 c t stg storage temperature -40~150 c thermal characteristics symbol parameter value units min typ max r j c thermal resistance junction to case - - 1.3 /w r j a thermal resistance junction to ambient - - 60 /w
w w w w cd10c60 cd10c60 cd10c60 cd10c60 2 / 5 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance electrical characteristics (t c =25 , unless otherwise noted ) symbol parameter test conditions value units min typ max i drm repetitive peak off-state current v ak =v drm t c =25 t c =125 - - 10 a - - 200 a v tm peak on-state voltage (1) i tm = 20 a, tp=380 ? - 1.4 1. 6 v i gt gate trigger current (2) v ak = 6 v (dc) ,r l = 10 ? t c =25 - - 15 m a v gt gate trigger voltage (2) v d =6v(dc),r l =10 ? t c =25 - - 1.5 v v gd non-trigger gate voltage (1) v ak = 12v, r l = 100 t c =125 0. 2 v dv/dt critical rate of rise off-state voltage linear slope up to v d =67% v drm , gate open t j =125 200 - - v/ ? i h holding current i t = 100 ma, gate open t c =25 - - 20 ma *notes: *notes: *notes: *notes: 1 pulse width 1.0ms,duty cycle 1% 2 r gk current is not included in measurement.
w w w w cd10c60 cd10c60 cd10c60 cd10c60 3 / 5 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance fig. 3 typical forward voltage fig. 4 thermal r e sponse fig.5typical g ate trigger voltage vs.junction temperature fig.6typical gate trigger current vs.junction temperature fig.1gate characteristics fig .2 maximum case temperature
w w w w cd10c60 cd10c60 cd10c60 cd10c60 4 / 5 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance fig.8 power disspation fig. 7 typical holding current
w w w w cd10c60 cd10c60 cd10c60 cd10c60 5 / 5 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance to to to to -252 -252 -252 -252 package package package package dimension dimension dimension dimension unit: mm
|
