the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor 2sK3639 switching n-channel power mos fet data sheet document no. d15967ej3v0ds00 (3rd edition) date published january 2005 ns cp(k) printed in japan 2002 the mark shows major revised points. description the 2sK3639 is n-channel mos fet device that features a low on-state resist ance and excellent switching characteristics, and designed for low voltage high current applications such as dc/dc converter with synchronous rectifier. features ? low on-state resistance r ds(on)1 = 5.5 m ? max. (v gs = 10 v, i d = 32 a) r ds(on)2 = 8.5 m ? max. (v gs = 4.5 v, i d = 32 a) ? low c iss : c iss = 2400 pf typ. absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss 20 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25c) i d(dc) 64 a drain current (pulse) note i d(pulse) 256 a total power dissipation (t c = 25c) p t1 40 w total power dissipation p t2 1.0 w channel temperature t ch 150 c storage temperature t stg ? 55 to +150 c note pw 10 s, duty cycle 1% ordering information part number package 2sK3639-zk to-252 (mp-3zk) (to-252)
data sheet d15967ej3v0ds 2 2sK3639 electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 10 a gate leakage current i gss v gs = 20 v, v ds = 0 v 100 na gate cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 1.5 2.5 v forward transfer admittance note | y fs | v ds = 10 v, i d = 32 a 19 39 s r ds(on)1 v gs = 10 v, i d = 32 a 4.4 5.5 m ? drain to source on-state resistance note r ds(on)2 v gs = 4.5 v, i d = 32 a 5.8 8.5 m ? input capacitance c iss 2400 pf output capacitance c oss 970 pf reverse transfer capacitance c rss v ds = 10 v v gs = 0 v f = 1 mhz 350 pf turn-on delay time t d(on) 13 ns rise time t r 14 ns turn-off delay time t d(off) 71 ns fall time t f v dd = 10 v, i d = 32 a v gs = 10 v r g = 10 ? 22 ns total gate charge q g 45 nc gate to source charge q gs 7.6 nc gate to drain charge q gd v dd = 16 v v gs = 10 v i d = 64 a 11 nc body diode forward voltage note v f(s-d) i f = 64 a, v gs = 0 v 0.96 v reverse recovery time t rr i f = 64 a, v gs = 0 v 40 ns reverse recovery charge q rr di/dt = 100 a/ s 35 nc note pulsed: pw 350 s, duty cycle 2% test circuit 2 gate charge test circuit 1 switching time pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1% pg. 50 ? d.u.t. r l v dd i g = 2 ma v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
data sheet d15967ej3v0ds 3 2sK3639 typical characteristics (t a = 25c) derating factor of forward bias safe operating area total power dissipation vs. case temperature dt - percentage of rated power - % 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t c - case temperature - c p t - total power dissipation - w 0 10 20 30 40 50 0 25 50 75 100 125 150 175 t c - case temperature - c forward bias safe operating area i d - drain current - a 0.1 1 10 100 1000 0.1 1 10 100 i d(pulse) tc = 25c single pulse 1 ms power dissipation limited i d(dc) pw = 10 s 10 ms dc 100 s r ds(on) limited (at v gs = 10 v) v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th(ch-a) = 125c/w r th(ch-c) = 3.13c/w pw - pulse width - s 10 100 1 m 10 m 100 m 1 10 100 1000
data sheet d15967ej3v0ds 4 2sK3639 drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 50 100 150 200 250 300 00.511.522.53 v gs = 10 v 4.5 v pulsed v ds - drain to source voltage - v i d - drain current - a 0.01 0.1 1 10 100 1000 012345 t ch = ? 55c 25c 75c 150c v ds = 10 v pulsed v gs - gate to source voltage - v gate cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) - gate cut-off voltage - v 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 v ds = 10 v i d = 1 ma ` t ch - channel temperature - c | y fs | - forward transfer admittance - s 0.1 1 10 100 0.1 1 10 100 t ch = ? 55c 25c 75c 150c v ds = 10 v pulsed i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m ? . ? 0 5 10 15 20 25 30 0 5 10 15 20 i d = 32 a pulsed v gs - gate to source voltage - v
data sheet d15967ej3v0ds 5 2sK3639 drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m ? . . . . . . . ? i d - drain current - a v ds - drain to source voltage - v 0 4 8 12 16 20 0 1020304050 0 2 4 6 8 10 v ds v dd = 16 v 10 v i d = 64 a v gs q g - gate charge - nc v gs - gate to source voltage - v source to drain diode forward voltage reverse recovery time vs. diode forward current i f - diode forward current - a 0.01 0.1 1 10 100 1000 0 0.5 1 1.5 v gs = 10 v 0 v pulsed v f(s-d) - source to drain voltage - v t rr - reverse recovery time - ns 1 10 100 1000 0.1 1 10 100 di/dt = 100 a/ s v gs = 0 v i f - diode forward current - a
data sheet d15967ej3v0ds 6 2sK3639 package drawing (unit: mm) to-252 (mp-3zk) 6.5 0.2 2.3 0.1 0.5 0.1 0.76 0.12 0 to 0.25 0.5 0.1 1.0 no plating no plating 5.1 typ. 1.0 typ. 6.1 0.2 0.51 min. 4.0 min . 0.8 10.4 max. (9.8 typ.) 4.3 min. 1 4 23 1.14 max. 2.3 2.3 1. gate 2. drain 3. source 4. fin (drain) equivalent circuit source body diode gate drain remark strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
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