advanced photonix, inc. uv enhanced gan detectors PDU-G102B features description applications ? 320nm uvb response package dimensions inch [mm] chip dimensions inch [mm] to-46 package .0126 [0.320] .0134 [0.340] .016 [0.40] sq ?.181 [4.60] viewing angle .500 [12.70] .055 [1.40] 2x ?.017 [0.43] .100 [2.54] 61 active area = 0.076 mm 2 cathode anode ?.210 [5.35] chip ? .118 [3.00] .087 [2.21] ? visible & nir blind ? photovoltaic operation ? high shunt resistance symbol parameter min max units v br reverse voltage 5 v t stg storage temperature -40 +90 c t o operating temperature -30 +85 c t s soldering temperature* +260 c spectral response 0.000 0.001 0.010 0.100 1.000 230 240 250 260 270 280 290 300 310 320 330 340 350 360 370 380 390 400 wavelength (nm) responsivity (a/w) electro - optical charact eristics rating (ta) = 2 3 c unless otherw i s e n oted * 1/16 inch from case for 3 seconds max. ? uvb power meters ? sun dosimeters ? uv epoxy curing ? u v in st r u m e n tat i o n absolut e m aximum rating (ta) = 2 3 c unle s s o ther w i se n o ted the PDU-G102B is a gan uv photodiode with a spectral range from 200nm to 320nm and is ideal for uvb sensing applications available in a to-46 can package. symbol characteristic test conditions min typ max units i sc short circuit current uvi = 1 1 na i d dark current v r = 1v 0.05 1 na r sh shunt resistance v r = 10 mv 0.45 1 gw c j junction capacitance v r = 0v, f = 1 mhz 24 pf l range spectral application range spot scan 200 320 nm r responsivity l = 350nm v, v r = 0 v 0.10 a/w v br breakdown voltage i = 1 a 10 v t r response time rl = 1k ? , v r = 1v 10 15 ns ? 2007 advanced photonix, inc. all rights reserved. specifications and output data subject to change without notice. advanced photonix, inc. 1240 avenida acaso, camarillo ca 93012 ? phone (805) 987-0146 ? fax (805) 484-9935 ? www.advancedphotonix.com rev 4/19/07
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