1 phase control scr bulletin i2115 16tts.. series v t <1.4v @ 10a i tsm = 200a v r / v d = 1200v description/features the 16tts.. new series of silicon controlled recti- fiers are specifically designed for medium power switching and phase control applications. the glass passivation technology used has reliable operation up to 125 c junction temperature. typical applications are in input rectification (soft start) and these products are designed to be used with international rectifier input diodes, switches and output rectifiers which are available in identi- cal package outlines. major ratings and characteristics to-220ac capacitive input filter t a = 55c, t j = 125c, 13.5 17 a common heatsink of 1c/w output current in typical applications applications single-phase bridge three-phase bridge units i t(av) sinusoidal 10 a waveform i rms 16 a v rrm / v drm 800 and 1200 v i tsm 200 a v t @ 10 a, t j = 25c 1.4 v dv/dt 500 v/s di/dt 150 a/s t j - 40 to 125 c characteristics 16tts..s units also available in smd-220 package (series 16tts..s)
2 16tts.. series part number v rrm , maximum v drm , maximum i rrm / i drm peak reverse voltage peak direct voltage 125c vvma 16tts08 800 800 5 16tts12 1200 1200 voltage ratings i t(av) max. average on-state current 10 a 50% duty cycle @ t c = 98 c, sinusoidal wave form i rms max. rms on-state current 16 i tsm max. peak one cycle non-repetitive 170 10ms sine pulse, rated v rrm applied surge current 200 10ms sine pulse, no voltage reapplied i 2 t max. i 2 t for fusing 144 a 2 s 10ms sine pulse, rated v rrm applied 200 10ms sine pulse, no voltage reapplied i 2 ? t max. i 2 ? t for fusing 2000 a 2 ? s t = 0.1 to 10ms, no voltage reapplied v tm max. on-state voltage drop 1.4 v @ 10a, t j = 25c r t on-state slope resistance 24.0 m w t j = 125c v t(to) threshold voltage 1.1 v i rm /i dm max.reverse and direct 0.5 ma t j = 25 c leakage current 5.0 t j = 125 c i h max. holding current 100 ma anode supply = 6v, resistive load, initial i t =1a i l max. latching current 200 ma anode supply = 6v, resistive load dv/dt max. rate of rise of off-state voltage 500 v/s di/dt max. rate of rise of turne d-on current 150 a/s absolute maximum ratings parameters 16tts.. units conditions v r = rated v rrm / v drm
3 16tts.. series triggering p gm max. peak gate power 8.0 w p g(av) max. average gate power 2.0 + i gm max. paek positive gate current 1.5 a - v gm max. paek negative gate voltage 10 v i gt max. required dc gate current 90 ma anode supply = 6v, resistive load, t j = - 65c to trigger 60 anode supply = 6v, resistive load, t j = 25c 35 anode supply = 6v, resistive load, t j = 125c v gt max. required dc gate voltage 3.0 v anode supply = 6v, resistive load, t j = - 65c to trigger 2.0 anode supply = 6v, resistive load, t j = 25c 1.0 anode supply = 6v, resistive load, t j = 125c v gd max. dc gate voltage not to trigger 0.2 t j = 125c, v drm = rated value i gd max. dc gate current not to trigger 2.0 ma t j = 125c, v drm = rated value parameters 16tts.. units conditions switching parameters 16tts.. units conditions t gt typical turn-on time 0.9 s t j = 25c t rr typical reverse recovery time 4 t j = 125c t q typical turn-off time 110 t j max. junction temperature range - 40 to 125 c t stg max. storage temperature range - 40 to 125 r thjc max. thermal resistance junction 1.3 c/w dc operation to case r thja max. thermal resistance junction 62 to ambient r thcs typ. thermal resistance case 0.5 mounting surface, smooth and greased to ambient wt approximate weight 2 (0.07) g (oz.) t mounting torque min. 6 (5) max. 12 (10) case style to-220ac thermal-mechanical specifications parameters 16tts.. units conditions kg-cm (ibf-in)
4 16tts.. series fig. 2 - current rating characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics fig. 6 - maximum non-repetitive surge current fig. 7 - maximum non-repetitive surge current fig. 1 - current rating characteristics 90 95 100 105 110 115 120 125 024681012 30 60 90 120 180 conduction angle average on-state current (a) maximum allowable case temperature (c) 16tts.. series r (dc) = 1.3 k/w thjc 90 95 100 105 110 115 120 125 0246810121416 dc 30 60 90 120 180 maximum allowable case temperature (c) conduction period average on-state current (a) 16tts.. series r (dc) = 1.3 k/w thjc 0 5 10 15 20 024681012 rms limit 180 120 90 60 30 conduction angle average on-state current (a) maximum average on- state power loss (w) 16tts.. t = 125c j 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 dc 180 120 90 60 30 rms limit conduction period average on-state current (a) maximum average on-state power loss (w) 16tts.. t = 125c j 80 100 120 140 160 180 1 10 100 number of equal amplitude half cycle current pulses (n) at any rated load condition and with rated v applied following surge. initial t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s rrm j peak half sine wave on-state current (a) 16tts..series 60 80 100 120 140 160 180 200 220 0.01 0.1 1 10 pulse train duration (s) maximum non repetitive surge current peak half sine wave forward current (a) versus pulse train duration. initial t = 125c no voltage reapplied rated v reapplied j rrm 16tts.. series
5 16tts.. series fig. 7 - on-state voltage drop characteristics fig. 8 - gate characteristics fig. 9 - thermal impedance z thjc characteristics 1 10 100 1000 012345 t = 25c j t = 125c j instantaneous on-state voltage (v) instantaneous on-state current (a) 16tts.. series 0.1 1 10 100 0.001 0.01 0.1 1 10 100 (b) (a) rectangular gate pulse (4) (3) (2) (1) instantaneous gate current (a) instantaneous gate voltage (v) tj = 25 c tj = 125 c b)recommended load line for vgd igd frequency limited by pg(av) a)recommended load line for rated di/dt: 10 v, 20 ohms tr = 0.5 s, tp >= 6 s <= 30% rated di/dt: 10 v, 65 ohms tr = 1 s, tp >= 6 s (1) pgm = 40 , tp = 1 ms (2) pgm = 20 w, tp = 2 ms (3) pgm = 8 w, tp = 5 ms (4) pgm = 4 w, tp = 10 ms tj = -10 c 16tts.. 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) thjc steady state value (dc operation) transient thermal impedance z (k/w) 16tts.. series single pulse d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08
6 16tts.. series outline t able dimensions in millimeters (and inches) 3.78 (0.15) 3.54 (0.14) 10.54 (0.41) max. dia. 15.24 (0.60) 14.84 (0.58) 2.92 (0.11) 2.54 (0.10) 1 term 2 14.09 (0.55) 13.47 (0.53) 3.96 (0.16) 3.55 (0.14) 0.94 (0.04) 0.69 (0.03) 4.57 (0.18) 4.32 (0.17) 3 0.61 (0.02) max. 5.08 (0.20) ref. 1.32 (0.05) 1.22 (0.05) 6.48 (0.25) 6.23 (0.24) 2 0.10 (0.004) 1.40 (0.05) 1.15 (0.04) 2.89 (0.11) 2.84 (0.10) 1 3 2.04 (0.080) max. 2 2 16 t t s 12 device code 1 5 24 3 1 - current rating, rms value 2 - circuit configuration t = single thyristor 3 - package t = to-220ac 4 - type of silicon s = converter grade 5 - voltage code: code x 100 = v rrm ordering information table 08 = 800v 12 = 1200v (g) 3 2 (a) 1 (k) 2
|
