SFP36N03 bv dss = 30 v r ds(on) = 0.018 i d = 36 a 30 36 25.3 144 20 775 36 9.4 5.5 94 0.63 - 55 to +175 300 1.60 -- 62.5 -- 0.5 -- avalanche rugged technology rugged gate oxide technology lower input capacitance improved gate charge extended safe operating area lower leakage current : 10 a (max.) @ v ds = 30v lower r ds(on) : 0.012 (typ.) advanced power mosfet thermal resistance junction-to-case case-to-sink junction-to-ambient r jc r cs r ja /w characteristic max. units symbol typ. features absolute maximum ratings drain-to-source voltage continuous drain current (t c =25 ) continuous drain current (t c =100 ) drain current-pulsed gate-to-source voltage single pulsed avalanche energy avalanche current repetitive avalanche energy peak diode recovery dv/dt total power dissipation (t c =25 ) linear derating factor operating junction and storage temperature range maximum lead temp. for soldering purposes, 1/8 from case for 5-seconds characteristic value units symbol i dm v gs e as i ar e ar dv/dt i d p d t j , t stg t l a v mj a mj v/ns w w/ a v dss v to-220 1.gate 2. drain 3. source 3 2 ? 2001 fairchild semiconductor corporation rev. a1
SFP36N03 30 -- 1.0 -- -- -- -- -- -- -- 0.036 -- -- -- -- -- -- -- 600 250 15 61 54 69 30 10 17 -- -- 2.5 100 -100 10 100 0.018 0.022 -- 1600 900 350 40 130 115 145 40 -- -- 6.5 1280 -- -- -- 25 0.22 36 144 1.5 -- -- notes ; repetitive rating : pulse width limited by maximum junction temperature l=0.6mh, i as =36a, v dd =15v, r g =27 ? , starting t j =25 i sd 36a, di/dt 100a/ s, v dd bv dss , starting t j =25 pulse test : pulse width = 250 s, duty cycle 2% essentially independent of operating temperature n-channel power mosfet electrical characteristics (t c =25 unless otherwise specified) drain-source breakdown voltage breakdown voltage temp. coeff. gate threshold voltage gate-source leakage , forward gate-source leakage , reverse characteristic symbol max. units typ. min. test condition static drain-source on-state resistance forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain( miller ) charge g fs c iss c oss c rss t d(on) t r t d(off) t f q g q gs q gd bv dss bv/ t j v gs(th) r ds(on) i gss i dss v v/ v na a ? ? pf ns nc -- -- -- -- -- -- -- -- -- -- -- v gs =0v,i d =250 a i d =250 a see fig 7 v ds =5v,i d =250 a v gs =20v v gs =-20v v ds =30v v ds =24v,t c =150 v gs =10v,i d =18a v gs =5v,i d =18a v ds =30v,i d =18a v dd =15v,i d =36a, r g =10.5 ? see fig 13 ? v ds =24v,v gs =5v, i d =36a see fig 6 & fig 12 ? drain-to-source leakage current v gs =0v,v ds =25v,f =1mhz see fig 5 source-drain diode ratings and characteristics continuous source current pulsed-source current diode forward voltage reverse recovery time reverse recovery charge i s i sm v sd t rr q rr characteristic symbol max. units typ. min. test condition -- -- -- -- -- a v ns c integral reverse pn-diode in the mosfet t j =25 ,i s =36a,v gs =0v t j =25 ,i f =36a di f /dt=100a/ s
SFP36N03 10 -1 10 0 10 1 10 0 10 1 10 2 @ notes : 1. 250 s pulse test 2. t c = 25 o c v gs top : 15 v 10 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v i d , drain current [a] v ds , drain-source voltage [v] 0246810 10 -1 10 0 10 1 10 2 25 o c 175 o c - 55 o c @ notes : 1. v gs = 0 v 2. v ds = 30 v 3. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 0 10 1 10 2 175 o c 25 o c @ notes : 1. v gs = 0 v 2. 250 s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 0 10 1 0 500 1000 1500 2000 2500 3000 c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd @ notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 25 50 75 100 125 150 0.005 0.010 0.015 0.020 0.025 0.030 @ note : t j = 25 o c v gs = 10 v v gs = 5 v r ds(on) , [ ? ] drain-source on-resistance i d , drain current [a] n-channel power mosfet fig 1. output characteristics fig 2. transfer characteristics fig 6. gate charge vs. gate-source voltage fig 5. capacitance vs. drain-source voltage fig 4. source-drain diode forward voltage fig 3. on-resistance vs. drain current 0 5 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10 12 v ds = 24 v v ds = 15 v v ds = 6 v @ notes : i d = 36 a v gs , gate-source voltage [v] q g , total gate charge [nc]
SFP36N03 -75 -50 -25 0 25 50 75 100 125 150 175 200 0.8 0.9 1.0 1.1 1.2 @ notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 10 0 10 1 10 -1 10 0 10 1 10 2 10 3 10 ms dc 1 ms 0.1 ms @ notes : 1. t c = 25 o c 2. t j = 175 o c 3. single pulse operation in this area is limited by r ds(on) i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 single pulse 0.2 0.1 0.01 0.02 0.05 d=0.5 @ notes : 1. z jc (t)=1.60 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm -t c =p dm *z jc (t) z jc (t) , thermal response t 1 , square wave pulse duration [sec] -75 -50 -25 0 25 50 75 100 125 150 175 200 0.5 1.0 1.5 2.0 @ notes : 1. v gs = 10 v 2. i d = 18 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] n-channel power mosfet fig 7. breakdown voltage vs. temperature fig 8. on-resistance vs. temperature fig 11. thermal response fig 10. max. drain current vs. case temperature fig 9. max. safe operating area p dm t 1 t 2 25 50 75 100 125 150 175 0 10 20 30 40 i d , drain current [a] t c , case temperature [ o c]
SFP36N03 n-channel power mosfet fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v out 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 5v q g q gs q gd vary t p to obtain required peak i d 5v v dd c l l v ds i d r g t p dut bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 5v v out v in r l dut r g 3ma v gs current sampling (i g ) resistor current sampling (i d ) resistor dut v ds 300nf 50k 200nf 12v same type as dut * current regulator ? r 1 r 2
SFP36N03 n-channel power mosfet fig 15. peak diode recovery dv/dt test circuit & waveforms 5v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + -- l i s driver v gs r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by duty factor d v dd
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