CMRSH-4DO surface mount dual, isolated, opposing silicon schottky diodes description: the central semiconductor CMRSH-4DO are dual, isolated, opposing high quality schottky diodes designed for applications where very small size and operational efficiency are prime requirements. marking code: cv applications: ? dc/dc converters ? voltage clamping ? protection circuits ? battery charging circuits features: ? current (i o =200ma) ? low forward voltage drop (v f =0.35v typ @ 1.0ma) ? low reverse current (25na typ @ 30v) ? extremely fast switching (5.0ns max) ? small 1.0 x 1.0 x 0.5mm sot-963 attomini? surface mount package ? versatile multi-configurable device maximum ratings: (t a =25c) symbol units peak repetitive reverse voltage v rrm 40 v average forward current i o 200 ma peak forward surge current, tp=8.3ms i fsm 600 ma power dissipation p d 125 mw operating junction temperature t j -65 to +125 c storage temperature t stg -65 to +150 c thermal resistance ja 800 c/w electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min typ max units i r v r =30v 25 200 na bv r i r =10a 40 v v f i f =1.0ma 0.35 0.38 v v f i f =15ma 0.55 0.65 v v f i f =40ma 0.77 1.00 v c t v r = 0, f=1.0mhz 5.0 pf t rr i f =i r =10ma, i rr =1.0ma, r l =100 5.0 ns sot-963 case r1 (9-june 2010) www.centralsemi.com
CMRSH-4DO surface mount dual, isolated, opposing silicon schottky diodes sot-963 case - mechanical outline lead code: 1) anode d1 2) nc 3) cathode d2 4) anode d2 5) nc 6) cathode d1 marking code: cv suggested mounting pad configurations in-series common anode common cathode pin configuration note: two devices easily configurable as a bridge rectifier. www.centralsemi.com r1 (9-june 2010)
CMRSH-4DO surface mount dual, isolated, opposing silicon schottky diodes typical electrical characteristics r1 (9-june 2010) www.centralsemi.com
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