cmhd2003 surface mount high voltage silicon switching diode description: the central semiconductor cmhd2003 is a silicon switching diode, manufactured by the epitaxial planar process, epoxy molded in a sod-123 surface mount package, designed for applications requiring high voltage capability. marking code: c03 maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 250 v continuous forward current i f 250 ma average rectified current i o 200 ma peak repetitive forward current i frm 625 ma peak forward surge current, tp<1.0s (t c =25c) i fsm 1.0 a power dissipation p d 400 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 312.5 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i r v r =200v 100 na i r v r =200v, t c =100c 15 a v f i f =100ma 1.0 v c t v r =0, f=1.0mhz 1.5 pf t rr i f =i r =30ma, r l =100, rec. to 3.0ma 50 ns sod-123 case r5 (5-august 2010) www.centralsemi.com
cmhd2003 surface mount high voltage silicon switching diode lead code 1) cathode 2) anode marking code: c03 sod-123 case - mechanical outline www.centralsemi.com r5 (5-august 2010)
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