1 description the HMMC-5033 is a mmic power amplifier designed for use in wireless transmitters that operate within the 17.7 ghz to 32 ghz range. at 28 ghz it provides 26 dbm of output power (p - 1db ) and 18 db of small?signal gain from a small easy?to?use device. the HMMC-5033 was designed to be driven by the hmmc-5040 (20? 40 ghz) or the hmmc-5618 (5.9?20 ghz) mmic amplifier for linear transmit applications. this device has input and out- put matching circuitry for use in 50 ohm environments. agilent HMMC-5033 17.7?32 ghz power amplifier data sheet chip size: 2.74 1.31 mm (108 51.6 mils) chip size tolerance: 10 m m ( 0.4 mils) chip thickness: 127 15 m m (5.0 0.6 mils) pad dimensions: see page 6 absolute maximum ratings [1] 1. absolute maximum ratings for continuous operation unless otherwise noted. symbol parameters/conditions min. max. units v d1,2 drain supply voltages 5.2 volts v g1 ,v gg gate supply voltages - 3.0 0.5 volts i d1 first stage drain current 320 ma i d2 second stage drain current 640 ma p in rf input power 23 dbm det.bias applied detector bias (optional) 5.2 volts t ch channel temperature [2] 2. refer to dc specifications / physical properties table for derating information. 170 c t a backside ambient temperature - 55 +85 c t st storage temperature - 65 +170 c t max maximum assembly temperature 300 c notes: features ? 26 dbm output p (-1db) at 28 ghz ? high gain: 18 db ? 50 w input/output matching ? small size ? rf detector network
2 dc specifications/physical properties [1] 1. backside ambient operating temperature t a = 25 c unless otherwise noted. symbol parameters/conditions min. typ. max. units v d1 drain supply operating voltage 3.5 5 volts v d2 drain supply operating voltage 5 5 volts i d1 first stage drain supply current (v d1 = 3.5 v, v g1 = open, v gg set for i d2 typical) 240 320 ma i d2 second stage drain supply current (v d2 = 5 v, v gg @ - 0.8 v) 460 640 ma v g1 ,v gg gate supply operating voltages (i d1 + i d2 @ 700 ma) - 0.8 volts v p pinch-off voltage [v dd = 2.5 v, (i d1 + i d2 ) 20 ma] c 2.5 - 1.2 - 0.8 volts det.bias detector bias voltage (optional) v d2 5 volts q 1(ch-bs) first stage thermal resistance [2] (channel?to?backside at t ch = 160 c) 2. thermal resistance ( c/watt) at a channel temperature t( c) can be estimated using the equation: q (t) @ qch-bs [t( c)+273] / [160 c+273]. 67 c/watt q 2(ch-bs) second stage thermal resistance [2] (channel?to?backside at t ch = 160 c) 37 c/watt t ch second stage channel temperature [3] (t a = 75 c, mttf > 10 6 hrs, v d2 = 5 v, i d2 = 460 ma ) 3. derate mttf by a factor of two for every 8 c above t ch . 160 c notes: rf specifications (t a = 25 c, z 0 = 50 w , v d1 = 3.5 v, v d2 = 5 v, i d2 = 460 ma [i d1 @ 240 ma]) symbol parameters/conditions lower band specifications mid band specifications upper band specifications units min. typ. max. min. typ. max. min. typ. max. bw operating bandwidth 17.7 21 21 26.5 25 31.5 ghz gain small signal gain 17 22 17 20 15 18 db p -1db output power at 1db gain compression 22 23 24 25 25 26 dbm p sat saturated output power [1] 1. devices operating continuously beyond 1 db gain compression may experience power degradation. 25 27 28 dbm (rl in ) min min. input return loss 8 10 9 12 10 12 db (rl out ) min min. output return loss 15 20 15 20 15 20 db isolation min. reverse isolation 50 50 50 db notes:
3 long bond wires, multiple wires can be attached to the rf bond- ing pads. gaas mmics are esd sensitive. esd preventive measures must be employed in all aspects of storage, handling, and assem- bly. mmic esd precautions, han- dling considerations, die attach and bonding methods are criti- cal factors in successful gaas mmic performance and reliabil- ity. agilent application note #54, "gaas mmic esd, die attach and bonding guidelines" pro- vides basic information on these subjects. additional references: an# 52, "1 watt 17.7 ghz? 32 ghz linear power amplifi- er," and pn# 6, "HMMC-5033 in- termodulation distortion." applications the HMMC-5033 mmic is a broadband power amplifier de- signed for use in transmitters that operate in various frequen- cy bands between 17.7 ghz and 32 ghz. it can be attached to the output of the hmmc-5040 (20? 40 ghz) or the hmmc-5618 (5.9?20 ghz) mmic amplifier, increasing the power handling capability of transmitters re- quiring linear operation. biasing and operation the recommended dc bias con- dition for optimum efficiency, performance, and reliability is v d1 = 3.5 volts and v d2 = 5 volts with v gg set for i d1 + i d2 = 700 ma (no connection to v g1 ). this bias arrangement results in de- fault drain currents i d1 = 240 ma and i d2 = 460 ma. a single dc gate supply connect- ed to v gg will bias all gain stag- es. if operation with both v d1 and v d2 at 5 volts is desired, an addi- tional wire bond connection from the v g1 pad to the v gg ex- ternal bypass chip-capacitor (shorting v g1 to v gg ) will bal- ance the currents in each gain stage. v gg (= v g1 ) can be adjust- ed for i d1 + i d2 = 700 ma. muting can be accomplished by setting v g1 and/or v gg to the pinchoff voltage v p . an on chip rf output power de- tector network is provided. the differential voltage between the det?ref and det?out pads can be correlated with the rf power emerging from the rf output port. bias the diodes at ~200 ma. the rf ports are ac?coupled at the rf input to the first stage and the rf output of the second stage. if the output detector is biased using the on?chip optional det- bias network, an external ac? blocking capacitor may be re- quired at the rf output port. no ground wires are needed since ground connections are made with plated through?holes to the backside of the device. assembly techniques it is recommended that the elec- trical connections to the bond- ing pads be made using 0.7?1.0 mil diameter gold wire. the mi- crowave/millimeter?wave con- nections should be kept as short as possible to minimize induc- tance. for assemblies requiring rf input rf output v d 2 v d 1 v g2 = v gg v g 1 stage 1 stage 2 det. out figure 1. simplified schematic diagram r2=1k w r1=250 w (optional) r3 det. bias det. reference r1 r2 d1 ref. d2 (optional) r3 r3 r3=10k w c
4 10 15 20 25 30 35 40 45 24 20 16 12 8 4 0 2 6 10 14 18 22 26 0 10 20 30 40 50 60 70 80 90 100 i s o l a t i o n frequency (ghz) s m a l l - s i g n a l g a i n ( d b ) v d1 =3.5v, v d2 =5v, i d1 =240ma, i d2 =460ma 0 5 10 15 20 25 30 i n p u t r e t u r n l o s s ( d b ) 10 15 20 25 30 35 45 40 o u t p u t r e t u r n l o s s ( d b ) 0 5 10 15 20 25 30 v d1 =3.5v, v d2 =5v, i d1 =240ma, i d2 =460ma frequency (ghz) i dd (ma) p s a t ( d b m ) p - 1 d b ( d b m ) 30 28 26 24 22 22 30 28 26 24 22 20 500 600 700 800 900 1000 p s a t ( d b m ) 35 31 27 23 19 15 18 20 22 24 26 28 30 32 34 36 p sat p - 1db p - 1 d b ( d b m ) 35 31 27 23 19 15 frequency (ghz) p sat p - 1db (17.7?31.5 ghz) spec. range (17.7?31.5 ghz) spec. range gain output rl input rl isolation v d1 =3.5v, v d2 =5v, i d1 =240ma, i d2 =460ma v d1 =3.5v, v d2 =5v, i d1 =240ma, i d2 =460ma figure 2. gain and isolation vs. frequency figure 3. input and output return loss vs. frequency figure 5. output power vs. frequency figure 4. output power vs. total drain current 26 22 18 14 10 0 6 24 20 16 12 8 4 2 10 12 14 16 18 20 22 24 26 28 30 20 18 16 14 12 10 8 6 4 2 0 rf output power (dbm) e f f i c i e n c y ( % ) g a i n ( d b ) gain effic. i d d ( m a ) 26 1020 24 22 20 18 16 14 12 10 8 6 4 2 0 940 860 780 700 620 540 g a i n ( d b ) 10 12 14 16 18 20 22 24 26 28 30 rf output power (dbm) v d1 =3.5v, v d2 = 5.0v v d1 =3.5v, v d2 =5.0v gain i dd figure 6. gain compression and efficiency at 28 ghz figure 7. gain and total drain current vs. output power
5 figure 8. assembly diagram illustrating the HMMC-5033 cascaded with the hmmc-5040 for 20?32 ghz applications rf input v d1 v dd v g v gg > 100 pf > 100 pf > 100 pf > 100 pf 180 ma 225-300 ma > 100 pf v d2 400 ma rf output v d1 > 100 pf 180 ma > 100 pf v d2 400 ma v dd > 100 pf 115 ma rf output rf input v gg > 100 pf figure 9. assembly diagram illustrating the HMMC-5033 cascaded with the hmmc-5618 for 17.7?20 ghz applications hmmc-5040 HMMC-5033 hmmc-5618 HMMC-5033
6 figure 10. bonding pad locations 145 480 745 1625 1980 2370 2610 1260 1165 635 95 80 280 735 1615 1970 2575 2690 1180 995 530 220 rf input v d2 v g1 v gg v d2 det. out rf output det. bias det. ref v d1 100 150 100 150 80 80 80 150 80 80 80 80 100 150 80 150 100 150 100 150
this data sheet contains a variety of typical and guaranteed performance data. the information supplied should not be interpreted as a complete list of circuit specifications. in this data sheet the term typical refers to the 50th per- centile performance. for additional information contact your local agilent technologies? sales representative. www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (408) 654-8675 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (+65) 6271 2451 india, australia, new zealand: (+65) 6271 2394 japan: (+81 3) 3335-8152(domestic/international), or 0120-61-1280(domestic only) korea: (+65) 6271 2194 malaysia, singapore: (+65) 6271 2054 taiwan: (+65) 6271 2654 data subject to change. copyright ? 2002 agilent technologies, inc. obsoletes 5966-4573e august 30, 2002 5988-2700en
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