2.1 - 61 2.1 three phase, 250 volt, 15 to 45 amp bridge with current and temperature sensing in a low profile package 4 09 r0 3 phase, low voltage, low r ds(on) , mosfet bridge circuit in a plastic package features ? three phase power switch configuration ? zener gate protection ? 10 miliohm shunt resistor ? linear thermal sensor ? isolated low profile package ? output currents up to 45 amps description this series of mosfet switches is configured in a 3 phase bridge with a common v dd line, precision series shunt resistor in the source line, and a sensing element to monitor the substrate temperature. this device is ideally suited for motor control applications where size, performance, and efficiency are key. maximum ratings (@ 25c) part v ds r ds(on) i d package number (volts) (m ) (amps) oms425 250 0.110 15 mp-3 oms525 250 0.110 20 mp-3 OMS625 250 0.055 45 mp-3 schematic OMS625 oms425 oms525 21 65 109 34 78 1112 13 14 15, 16 , 17 18, 19, 20 32, 33, 34 29, 30, 31 26, 27, 28 23, 24, 25 21 22
2.1 - 62 2.1 oms425, oms525, OMS625 electrical characteristics: oms425 (t c = 25 unless otherwise specified) characteristic symbol min. typ. max. unit off characteristics drain-source breakdown voltage, i d = 250 a, v gs = 0 v brdss 250 - - v zero gate voltage drain current = v gs , v ds = max. rat. i dss - - 10 a v ds = max. rat. x 0.8, t c = 70c - - 100 a gate-body leakage, v gs = 12 v i gss - - 500 na on characteristics gate-threshold voltage, v ds = v gs , i d = 250 a v gsth 2.0 - 4.0 v static drain-source on-resistance, v gs = 10 vdc, i d = 9.0a r dson - - 0.11 static drain-source on-resistance t c = 70c - - 0.19 on state drain current, v ds > i d(on) x r ds(on) max., v gs = 10 i don 15--a dynamic characteristics forward transconductance v ds > i d(on) x r ds(on) max., i d = 11.5 a, g fs 11 - - mho input capacitance v ds = 25 v, c iss - - 4340 pf output capacitance v gs = 0, c oss - - 810 pf reverse transfer capacitance f = 1.0 mhz c rss - - 320 pf switching characteristics turn-on delay time t don - - 50 ns rise time v dd = 125 v, i d = 15 a, t r - - 240 ns turn-off delay time r gs = 9.1 , v gs = 10 v t doff - - 150 ns fall time t f - - 182 ns source drain diode characteristics source - drain current i sd --15a source - drain current pulsed i sdm *--56a forward on-voltage i sd = 15 a, v gs = 0, v sd - - 1.3 v reverse recovery time i sd = 15 a, di/dt = 100 a/sec t rr - 300 - ns reverse recovered charge q rr - 3.5 - c resistor characteristics resistor tolerance r s 9.0 10 11 m temperature coefficient, -40c to +70c t cr - 100 - ppm * indicates pulse test 300 sec, duty cycle 1.5% absolute maximum ratings (t c = 25c unless otherwise noted) parameter oms425 oms525 OMS625 units v ds drain-source voltage 250 250 250 v v dgr drain-gate voltage (r gs = 1 m ) 250 250 250 v i d @ t c = 25c continuous drain current 15 20 45 a i d @ t c = 70c continuous drain current 15 16.6 38 a i dm pulsed drain current 1 56 69 80 a p d @ t c = 25c maximum power dissipation 2 50 50 100 w p d @ t c = 70c maximum power dissipation 2 27.5 27.5 55 w junction-to-case linear derating factor 0.5 0.5 1.0 w/c thermal resistance junction-to-case 2.0 2.0 1.0 c/w note 1: pulse test: pulse width 300 sec. duty cycle 1.5%. note 2: maximum junction temperature equal to 125c.
2.1 - 63 2.1 oms425, oms525, OMS625 electrical characteristics: oms525 (t c = 25 unless otherwise specified) characteristic symbol min. typ. max. unit off characteristics drain-source breakdown voltage, i d = 250 a, v gs = 0 v (brdss 250 - - v zero gate voltage drain current = v gs , v ds = max. rat. i dss - - 1.0 a v ds = max. rat. x 0.8, t c = 70c - - 100 a gate-body leakage, v gs = 12 v i gss - - 500 na on characteristics gate-threshold voltage, v ds = v gs , i d = 250 a v gs(th) 2.0 - 4.0 v static drain-source on-resistance, v gs = 10 vdc, i d = 10 a r ds(on) - - 0.11 static drain-source on-resistance t c = 70c - - 0.19 on state drain current, v ds > i d(on) x r ds(on) max., v gs = 10 i d(on) 20 - - a dynamic characteristics forward transconductance v ds > i d(on) x r ds(on) max., i d = 11.5 a g fs 11 - - mho input capacitance v ds = 25 v, c iss - - 4340 pf output capacitance v gs = 0, c oss - - 810 pf reverse transfer capacitance f = 1.0 mhz c rss - - 320 pf switching characteristics turn-on delay time, t d(on) - - 50 ns rise time v dd = 125 v, i d = 20 a, t r - - 250 ns turn-off delay time r gs = 9.1 , v gs = 10 v t d(off) - - 180 ns fall time t f - - 200 ns source drain diode characteristics source - drain current i sd --20a source - drain current (pulsed) i sd = 20 a, v gs = 0 i sdm * - 100 a forward on-voltage i sd = 20 a, v sd - - 1.3 v reverse recovery time di/dt = 100 a/sec t rr - 300 - ns reverse recovered charge q rr - 3.5 - c resistor characteristics resistor tolerance r s 9.0 10 11 m temperature coefficient, -40c to +70c t cr - 100 - ppm * indicates pulse test 300 sec, duty cycle 1.5%.
2.1 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 oms425, oms525, OMS625 .360 .180 .020 .360 max. 2.000 1.350 .150 (4) plcs. 4.000 3.000 .150 .500 .500 .250 .250 .600 .325 .050 (34) plcs. .300 2.450 .135 pin 1: gate q1 pin 2: source q1 pin 3: gate q2 pin 4: source q2 pin 5: gate q3 pin 6: source q3 pin 7: gate q4 pin 8: source q4 pin 9: gate q5 pin 10: source q5 pin 11: gate q6 pin 12: source q6 pin 13: +sense res. pin 14: -sense res. pin 15: power gnd pin 16: power gnd pin 17: power gnd pin 34: v dd pin 33: v dd pin 32: v dd pin 31: output phase a pin 30: output phase a pin 29: output phase a pin 28: output phase b pin 17: output phase b pin 26: output phase b pin 25: output phase c pin 24: output phase c pin 23: output phase c pin 22: +ptc pin 21: -ptc pin 20: power gnd pin 19: power gnd pin 18: power gnd mechanical outline 1 notes: ?contact factory for lead bending options. ?mounting recommendations: maximum mounting torque: 3.0 mn. the module must be attached to a flat heat sink (flatness 100 m m maximum). electrical characteristics: OMS625 (t c = 25 unless otherwise specified) characteristic symbol min. typ. max. unit off characteristics drain-source breakdown voltage, i d = 250 a, v gs = 0 v (brdss 250 - - v zero gate voltage drain current = v gs , v ds = max. rat. i dss - - 10.5 a v ds = max. rat. x 0.8, t c = 70c - - 1000 a gate-body leakage, v gs = 12 v i gss - - 1.0 na on characteristics gate-threshold voltage, v ds = v gs , i d = 250 a v gs(th) 2.0 - 4.0 v static drain-source on-resistance, v gs = 10 vdc, i d = 22.5 a r ds(on) - - 0.055 static drain-source on-resistance t c = 70c - - 0.1 on state drain current, v ds > i d(on) x r ds(on) max., v gs = 10 i d(on) 45--a dynamic characteristics forward transconductance v ds > i d(on) x r ds(on) max., i d = 40 a g fs 22 - - mho input capacitance v ds = 25 v, c iss - - 8680 pf output capacitance v gs = 0, c oss - - 1620 pf reverse transfer capacitance f = 1.0 mhz c rss - - 640 pf switching characteristics turn-on delay time t d(on) - - 50 ns rise time v dd = 125 v, i d = 45 a, t r - - 250 ns turn-off delay time r gs = 9.1 , v gs = 10 v t d(off) - - 160 ns fall time t f - - 200 ns source drain diode characteristics source - drain current i sd --45a source - drain current (pulsed) i sd = 45 a, v gs = 0, i sdm * - - 150 a forward on-voltage i sd = 45 a, v sd - - 1.3 v reverse recovery time di/dt = 100 a/sec t rr - 300 - ns reverse recovered charge q rr - 7.0 - c resistor characteristics resistor tolerance r s 9.0 10 11 m temperature coefficient, -40c to +70c t cr - 100 - ppm * indicates pulse test 300 sec, duty cycle 1.5%.
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