agilent HMMC-1015 dc 50 ghz variable attenuator data sheet description the HMMC-1015 is a monolithic, voltage variable, gaas ic attenu- ator that operates from dc to 50 ghz. the distributed topology of the HMMC-1015 minimizes the parasitic effects of its series and shunt fets, allowing the HMMC-1015 to exhibit a wide dynamic range across its full bandwidth. an on-chip dc reference circuit may be used to maintain optimum vswr for any attenuation setting or to improve the attenuation versus voltage linearity of the attenuator circuit. features specified frequency range: dc 26.5 ghz ? in (-1db): 27 dbm @ 500 mhz return loss: 10 db minimum attenuation: 2.0 db maximum attenuation: 30.0 db absolute maximum ratings [1] symbol parameters/conditions units min. max. v dc-rf dc voltage to rf ports v -0.6 +1.6 v 1 v 1 control voltage v -10.5 +0.5 v 2 v 2 control voltage v -10.5 +0.5 v dc dc in/dc out v -0.6 +1.0 p in rf input power dbm 17 t mina min. ambient operating temp. c -55 t maxa max. ambient operating temp. c +125 t stg storage temperature c -65 +165 t max max. assembly temp. (for 60 sec. max.) c +300 note: 1. operation in excess of any one of these conditions may result in damage to this device. chip size: 1470 x 610 m (57.9 x 24.0 mils) chip size tolerance: 10 m ( 0.4 mils) chip thickness: 127 15 m (5.0 0.6 mils)
2 HMMC-1015 dc specifications/physical properties, t a = 25 c symbol parameters and test conditions units min. typ. max. i v1 v 1 control current, (v 1 = -10v) ma 5.0 5.9 7.1 i v2 v 2 control current, (v 2 = -10v) ma 5.0 5.9 7.1 v p pinch-off voltage v -6.75 -5.0 -3.75 electrical specifications [1] , t a = 25 c, z o = 50 ? parameters and test conditions units freq. min. typ. max. (ghz) 1.5 1.0 2.4 8.0 1.4 2.4 minimum attenuation, |s 21 | (v 1 = 0 v, v 2 = -10 v) db 20.00 1.7 2.4 26.5 2.0 2.4 50.0 3.9 input/output return loss @ min. attenuation setting, db <26.5 10 16 (v 1 = 0 v, v 2 = -10 v) <50.0 8 1.5 27 30 8.0 27 38 maximum attenuation, |s 21 | (v 1 = -10 v, v 2 = 0 v) db 20.0 27 38 26.5 27 40 50.0 35 p -1db @ minumum attenuation dbm 300 khz 18.5 dbm >500 mhz 27 input/output return loss @ max. attenuation setting, db <26.5 8 10 (v 1 = -10v, v 2 = 0v) db <50.0 10 dc power dissipation, v 1 = -10.5 v, v 2 = -10.5 v mw 158 (does not include input signals) note: 1. attenuation is a positive number; whereas, s 21 as measured on a network analyzer would be a negative number.
3 application the HMMC-1015 is designed to be used as a gain control block in an alc assembly. because of its wide dynamic range and return loss performance, the HMMC-1015 may also be used as a broadband pulse modulator or single-pole single- throw, non-reflective switch. operation the attenuation value of the hmmc-1002 is adjusted by apply- ing negative voltage to v 2 . at any attenuation setting, optimum vswr is obtained by applying negative voltage to v 1 . applying negative voltage (v 2 ) to the gates of the shunt fets sets the source-to-drain resistance and establishes the attenuation level. applying negative voltage (v 1 ) to the gates of the series fets opti- mizes the input and output match for different attenuation settings. in some applications, a single setting of v 1 may provide sufficient input and output match over the desired attenua- tion range (v 2 ). for any HMMC-1015 the values of v 1 may be adjusted so that the device attenuation versus voltage is monotonic for both v 1 and v 2 ; however, this will slightly de- grade the input and output return loss. the attenuation and input/ output match of the HMMC-1015 may also be controlled using only a single input voltage by utilizing the on-chip dc reference circuit and the driver circuit shown in figure 4. this circuit optimizes vswr for any attenuation setting. because of process variations, the values of v ref , r ref , and r l are different for each wafer if optimum perfor- mance is required. typical values for these elements are given. the ratio of the resistors r 1 and r 2 determines the sensitivity of the attenuation versus voltage performance of the attenuator. for more information on the performance of the HMMC-1015 and the driver circuits previously mentioned see mwtcs applica- tion note #37, hmmc-1021 attenuator: attenuation con- trol. for more s-parameter information, see mwtcs appli- cation note #44, HMMC-1015 attenuator: s-parameters. assembly techniques gaas mmics are esd sensitive. esd preventive measures must be employed in all aspects of storage, handling, and assembly. mmic esd precautions, handling considerations, die attach and bonding methods are critical factors in successful gaas mmic performance and reliability. agilent application note #54, gaas mmic esd, die attach and bonding guidelines pro- vides basic information on these subjects. v 1 50 50 ? rf attenuator circuit 50 500 500 dc in dc out 500 ? dc reference circuit v 2 rf in rf out figure 1. HMMC-1015 schematic.
4 figure 2. HMMC-1015 bonding pad locations. rf out rf in dc in dc out v 1 v 2 4 wire bonds using 0.7 mil dia. gold bond wire (length not important) 2.0 mil nom. gap tc721r figure 3. HMMC-1015 assembly diagram. 610 0 233 233 476 0 584 887 994 1410 1470 notes: 1. all dimensions in microns and shown to center of bond pad. 2. dc in , v 1 , dc out , and v 2 bonding pads are 75 x 75 microns. 3. rf input and output bonding pads are 60 x 70 microns. 4. chip thickness: 127 15 m.
5 v ref 500 ? (350 ? 500 ? ) 500 ? op. amp a b (-0.4v to -1.0v) v in (0v to -10.0v) r ref to dc in to v 1 to v 2 (400 ? 500 ? ) r l to dc out + figure 4. attenuator driver. HMMC-1015 typical performance figure 5. attenuation vs. frequency. [1] 1 3 5 7 9 111315171921232527 frequency (ghz) attenuation (db) 60 50 40 30 20 10 0 figure 6. output return loss vs. frequency. [1] 1 3 5 7 9 111315171921232527 frequency (ghz) return loss (db) 60 50 40 30 20 10 0 maximum attenuation minimum attenuation note: 1. data obtained from on-wafer measurements. t chuck = 25 c.
6 HMMC-1015 typical temperature performance all attenuation settings were done at 1 ghz. key for temperature settings: figure 7. attenuation vs. temperature @ minimum attenuation. [1] 1 3 5 7 9 111315171921232527 frequency (ghz) attenuation s 21 (db) 6 5 4 3 2 1 0 -55 c -25 c 0 c +25 c +55 c +85 c figure 8. attenuation vs. temperature @ maximum attenuation. [1] 1 3 5 7 9 111315171921232527 frequency (ghz) attenuation s 21 (db) 80 70 60 40 30 20 0 10 50 note: 1. data taken with the device mounted in connectorized package.
www.semiconductor.agilent.com data subject to change. copyright ? 2001 agilent technologies, inc. obsoletes 596 8 - 44 4 6 e ma y 18 , 2001 5988-2547en this data sheet contains a variety of typical and guaranteed performance data. the information supplied should not be interpreted as a complete list of circuit specifications. in this data sheet the term typical refers to the 50th percentile performance. for additional information contact your local agilent technologies sales representative.
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