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Preliminary Datasheet
RJP60D0DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding R07DS0173EJ0100 Rev.1.00 Mar 11, 2011
Outline
RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL)
C
G
1. Gate 2. Collector 3. Emitter
1
23
E
Absolute Maximum Ratings
(Ta = 25C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25C Tc = 100C Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C Symbol VCES VGES IC IC ic(peak) Note1 PC Note2 j-c Note2 Tj Tstg Ratings 600 30 45 22 90 35 3.57 150 -55 to +150 Unit V V A A A W C/ W C C
R07DS0173EJ0100 Rev.1.00 Mar 11, 2011
Page 1 of 6
RJP60D0DPP-M0
Preliminary
Electrical Characteristics
(Ta = 25C)
Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf tsc Min -- -- 4.0 -- -- -- -- -- -- -- -- -- -- -- -- 3.0 Typ -- -- -- 1.6 2.0 1050 70 32 45 6 20 35 20 90 70 5.0 Max 5 1 6.0 2.2 -- -- -- -- -- -- -- -- -- -- -- -- Unit A A V V V pF pF pF nC nC nC ns ns ns ns s Test Conditions VCE = 600 V, VGE = 0 VGE = 30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 22 A, VGE = 15 V Note3 IC = 45 A, VGE = 15 V Note3 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 22 A VCC = 300 V, VGE = 15 V IC = 22 A Rg = 5 Inductive load) VCC 400 V, VGE = 15 V
Short circuit withstand time Notes: 3. Pulse test
R07DS0173EJ0100 Rev.1.00 Mar 11, 2011
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RJP60D0DPP-M0
Preliminary
Main Characteristics
Collector Dissipation vs. Case Temperature
50 50
Maximum DC Collector Current vs. Case Temperature
Collector Dissipation Pc (W)
40
Collector Current IC (A)
0 25 50 75 100 125 150 175
40
30
30
20
20
10
10
0
0 0 25 50 75 100 125 150 175
Case Temperature Tc (C)
Case Temperature Tc (C)
Maximum Safe Operation Area
1000 100
Turn-off SOA
Collector Current IC (A)
Collector Current IC (A)
100
PW
80
10
10
=
0
10
s
s
60
40
1 Ta = 25C Single pulse 0.1 1
20
0 10 100 1000 0 200 400 600 800
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
Pulse Test Ta = 25C 15 V 60 18 V 40 VGE = 8 V 20 12 V 80 10 V
Typical Output Characteristics
Pulse Test Ta = 150C 15 V 60 18 V 40 VGE = 8 V 20 10 V 12 V
80
Collector Current IC (A)
0 0 1 2 3 4 5
Collector Current IC (A)
0 0 1 2 3 4 5
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
R07DS0173EJ0100 Rev.1.00 Mar 11, 2011
Page 3 of 6
RJP60D0DPP-M0
Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical)
8 Ta = 25C Pulse Test
Preliminary
Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical)
8 Ta = 150C Pulse Test
Collector to Emitter Satularion Voltage VCE(sat) (V)
6 IC = 22 A 4 45 A
Collector to Emitter Satularion Voltage VCE(sat) (V)
6 IC = 22 A 4 45 A
2
2
0 0 4 8 12 16 20
0 0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Voltage VGE (V)
Switching Caracteristics (Typical) (1)
1000 10000
Switching Caracteristics (Typical) (2)
Swithing Energy Losses E (J)
Switching Times t (ns)
VCC = 300 V, VGE = 15 V Rg = 5 , Ta = 25C
100
td(off) tf td(on)
1000
Eoff 100 Eon
10
tr VCC = 300 V, VGE = 15 V Rg = 5 , Ta = 25C 1 10 100
1
10 1 10 100
Collector Current IC (A) (Inductive load) Switching Caracteristics (Typical) (3)
1000
Collector Current IC (A) (Inductive load) Switching Caracteristics (Typical) (4)
1000
Swithing Energy Losses E (J)
Switching Times t (ns)
VCC = 300 V, VGE = 15 V IC = 22 A, Ta = 25C
Eoff Eon 100
100
td(off) td(on) tf tr
10 2 5 10 20 50
10 2 5
VCC = 300 V, VGE = 15 V IC = 22 A, Ta = 25C 10 20 50
Gate Registance Rg () (Inductive load)
Gate Registance Rg () (Inductive load)
R07DS0173EJ0100 Rev.1.00 Mar 11, 2011
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RJP60D0DPP-M0
Transfer Characteristics (Typical)
Preliminary
80
Collector Current IC (A)
Ta = 25C 60 150C
40
20 VCE = 10 V Pulse Test 0 0 4 8 12 16
Gate to Emitter Voltage VGE (V)
Thermal Impedance vs. Pulse Width
Thermal Impedance ch - c (C/W)
10 TC = 25C
1
le ing pul se
S
0.1
0.01 100
1m
10 m
100 m
1
10
100
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
90%
Diode clamp/ D.U.T L
Vin 10% 90%
90%
Rg
D.U.T/ Driver
VCC
Ic td(on)
10% tr ton
10% td(off) toff tf
R07DS0173EJ0100 Rev.1.00 Mar 11, 2011
Page 5 of 6
RJP60D0DPP-M0
Preliminary
Package Dimension
Package Name TO-220FL JEITA Package Code RENESAS Code PRSS0003AF-A Previous Code TO-220FL MASS[Typ.] 1.5g
Unit: mm
10.0 0.3
2.8 0.2
3.0 0.3
15.0 0.3
3.2 0.2
3.6 0.3
12.5 0.5
1.15 0.2 1.15 0.2
0.75 0.15 0.40 0.15 2.54 0.25 2.54 0.25
6.5 0.3 2.6 0.2 4.5 0.2
Ordering Information
Orderable Part Number RJP60D0DPP-M0-T2 Quantity 1050 pcs Shipping Container Box (Tube)
R07DS0173EJ0100 Rev.1.00 Mar 11, 2011
Page 6 of 6
Notice
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