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GaAs MMIC Data Sheet Multiband Power Amplifier [800 ... 3500 MHz] DECT, PHS, PWT, Bluetooth, ISM900, ISM2400, WLL * Single Voltage Supply * Operating voltage range: 2 V to 6 V * POUT = 25.5 dBm at VD = 2.4 V * POUT = 26.0 dBm at VD = 3.0 V * POUT = 29.0 dBm at VD = 5.0 V * Overall power added efficiency up to 50% * Easy external matching ESD: Electrostatic discharge sensitive device, observe handling precautions! * * CGY 196 SCT-598 Type CGY 196 Marking D6s Ordering Code (taped) Q62702-G0080 Package SCT-598 Maximum Ratings Parameter Positive supply voltage Supply current Maximum input power Channel temperature Storage temperature Total power dissipation (TS 80 C) TS: Temperature at soldering point Pulse peak power Symbol Value 6 1.0 20 150 - 55 ... + 150 1.0 2.0 Unit V A dBm VD ID PIN_max TCh Tstg Ptot PPulse C C W W Data Sheet 1 2001-01-01 GaAs Components CGY 196 Thermal Resistance Parameter Channel-soldering point Symbol Value 70 Unit K/W RthChS VD1 VD2 RF IN / VG RF OUT / VD3 GND GND GND EHT08746 Figure 1 Functional Block Diagram Pin Configuration Pin No. 1 2 3 4 5 6 7 8 Symbol RF IN/VG GND Configuration RF input power + Gate voltage [0 V internal] RF and DC ground Pos. drain voltage of the 2nd stage Not connected Not connected VD2 N.C. N.C. RF OUT/VD3 RF output power/Pos. drain voltage of the 3rd stage GND RF and DC ground Pos. drain voltage of the 1st stage VD1 Data Sheet 2 2001-01-01 GaAs Components CGY 196 DC Characteristics Characteristics Symbol Limit Values min. Drain current stage 1 - 3 typ. 45 65 340 90 130 220 max. 75 110 515 130 170 300 mA mA mA mS mS mS Unit Test Conditions IDSS1 IDSS2 IDSS3 GFS1 GFS2 GFS3 30 45 230 50 80 150 VD1 = 3 V VD2 = 3 V VD3 = 3 V VD = 3 V, ID = 50 mA VD = 3 V, ID = 300 mA VD = 3 V, ID = 300 mA Transconductance stage 1 - 3 Determination of Permissible Total Power Dissipation for Continuous and Pulse Operation The dissipated power is the power which remains in the chip and heats the device. It does not contain RF signals which are coupled out consistently. a) Continuous Wave/DC Operation For the determination of the permissible total power dissipation Ptot-DC from the diagram below it is necessary to obtain the temperature of the soldering point TS first. There are two cases: * When RthSA (soldering point to ambient) is not known: Measure TS with a temperature sensor at the leads were the heat is transferred from the device to the board (normally at the widest source or ground lead for GaAs). Use a small sensor of low heat transport, for example a thermoelement (< 1 mm) with thin wires or a temperature indicating paper while the device is operating. When RthSA is already known: TS = PDiss x RthSA + TA * Data Sheet 3 2001-01-01 GaAs Components CGY 196 Permissible Total Power Dissipation in DC Operation 1600 mW EHT08747 Ptot DC 1200 1000 800 600 400 200 0 0 50 100 C 150 TS b) Pulsed Operation For the calculation of the permissible pulse load Ptot-max the following formula is applicable: Ptot-max = Ptot-DC x Pulse factor = Ptot-DC x (Ptot-max/Ptot-DC) Use the values for Ptot-DC as derived from the above diagram and for the pulse factor = Ptot-max/Ptot-DC from the following diagram to get a specific value. Data Sheet 4 2001-01-01 GaAs Components CGY 196 Pulse Factor 10 1 EHT08748 Ptot max Ptot DC 5 tp D= T tp T D= 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Ptot-max should not exceed the absolute maximum rating for the dissipated power PPulse = "Pulse peak power" = 2 W c) Reliability Considerations This procedure yields the upper limit for the power dissipation for continuous wave (cw) and pulse applications which corresponds to the maximum allowed channel temperature. For best reliability keep the channel temperature low. The following formula allows to track the individual contributions which determine the channel temperature. TCh = Channel temperature (= junction temperature) (PDiss/Pulse Factor x RthChS) + TS Temperature of soldering point, measured or calculated Power dissipated in the Rth of device from chip, divided by the channel to soldering applicable pulse factor point (= 1 for DC and CW). It does not contain decoupled RF-power Data Sheet 5 2001-01-01 GaAs Components CGY 196 Electrical Characteristics, 3.0 V DECT-Application, f = 1.89 GHz TA = 25 C, f = 1.89 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol min. Supply current Supply current Gain Output Power Overall Power added Efficiency Overall Power added Efficiency Supply current Supply current Gain Output Power Overall Power added Efficiency Overall Power added Efficiency Off Isolation Load mismatch Limit Values typ. 300 450 30 26.0 45 50 450 330 32 28 40 45 40 max. 500 700 33 27.0 - - - 600 - 30 - - - mA mA dB dBm % % mA mA dB dBm % % dB - Unit Test Conditions IDD IDD G PO PAE PAE - - 27 24.0 35 - - - - 26.5 30 - - VD = 3.0 V; PIN = + 0 dBm VD = 3.0 V; PIN = - 10 dBm VD = 3.0 V; PIN = - 10 dBm VD = 3.0 V; PIN = 0 dBm VD = 3.0 V; PIN = + 0 dBm VD = 3.0 V; PIN = 3 dBm VD = 4.8 V; PIN = - 10 dBm VD = 4.8 V; PIN = 0 dBm VD = 4.8 V; PIN = - 10 dBm VD = 4.8 V; PIN = 3 dBm VD = 4.8 V; PIN = 3 dBm VD = 4.8 V; PIN = 5 dBm VD = 0 V; PIN = 0 dBm PIN = 0 dBm, VD 3.6 V, ZS = 50 Load VSWR = 20:1 for all phase IDD IDD G PO PAE PAE -S21 - No module damage for 10 s Data Sheet 6 2001-01-01 GaAs Components CGY 196 Electrical Characteristics, 3.0 V DECT-Application, f = 1.89 GHz (cont'd) TA = 25 C, f = 1.89 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol min. Load mismatch - Limit Values typ. max. - Unit Test Conditions No module damage for 10 s PIN = 3 dBm, VD 5.0 V, ZS = 50 Load VSWR = 20:1 for all phase Stability - All spurious output more - than 70 dB below desired signal level. PIN = 0 dBm, VD 3.6 V, ZS = 50 Load VSWR = 10:1 for all phase Stability - All spurious output more - than 70 dB below desired signal level. PIN = 3 dBm, VD 5.0 V, ZS = 50 Load VSWR = 10:1 for all phase Data Sheet 7 2001-01-01 GaAs Components CGY 196 Electrical Characteristics (3.0 V DECTApplication, f = 1.89 GHz) Output Power and Power Added Efficiency, VD = 3.3 V, duty cycle 10% 27 dBm POUT 26 25 24 23 22 21 20 19 18 PAE EHT08749 Output Power and Power Added Efficiency, VD = 5.0 V, duty cycle 10% 30 dBm POUT 29 28 27 26 25 24 23 22 21 PAE EHT08750 POUT 60 % 55 PAE 50 45 40 35 30 25 20 15 POUT 60 % 55 PAE 50 45 40 35 30 25 20 15 17 10 -11 -9 -7 -5 -3 -1 1 3 5 dBm 10 20 10 -11 -9 -7 -5 -3 -1 1 3 5 dBm 10 PIN PIN pulsed mode: T = 417 s, duty cycle 12.5% Data Sheet 8 2001-01-01 GaAs Components CGY 196 Microwave Harmonica (tm) v5.0 COMPACT SOFTWARE 30.0 20.0 10.0 10.0 0.0 -10.0 CGY 196 Vd = 3.3 V Jun-09-98 16:37:43 Ckt neu Y2 dB(S11) Ckt neu Y2 dB(S22) Ckt neu Y2 dB(S21) Ckt neu Y1 dB(S12) -10.0 -20.0 -30.0 -40.0 -50.0 Y1 dB(S12) 0.0 -20.0 -30.0 -40.0 -50.0 -60.0 -70.0 0.0 0.5 1.0 1.5 FREQ [GHZ] 2.0 2.5 3.0 Y2 EHT08751 Figure 2 S-Parameter, pulsed mode: T = 417 s, Duty Cycle 12.5%, PIN = 0 dBm, VD = 3.3 V Data Sheet 9 2001-01-01 GaAs Components CGY 196 POUT, ID = f (VD), PIN = 0 dBm (pulsed mode: T = 417 s, duty cycle 12.5%) 400 mA EHT08752 POUT vs. T, VD = 3.0 V, duty cycle = 10%, PIN = 0 dBm 40 dBm 30 I 350 POUT POUT 29 dBm EHT08755 POUT 300 250 20 10 VD = 4.8 V 28 I 200 150 100 50 0 0 -10 27 VD = 3 V -20 -30 -40 26 0 1 2 3 4 V5 25 -40 -20 0 20 40 60 C 100 VD T Harmonic Distortion, VD = 3.3 V -30 dBc -35 Distortion EHT08753 Harmonic Distortion, VD = 4.8 V -30 dBc -35 Distortion EHT08754 -40 3f -45 -50 -55 -60 -65 -70 -10 2f -40 -45 3f -50 2f -55 -60 -65 -70 -10 -8 -6 -4 -2 0 2 dBm 5 -8 -6 -4 -2 0 2 dBm 5 PIN PIN Data Sheet 10 2001-01-01 GaAs Components CGY 196 IN CGY 196 C1 C3 R1 D1 V 1.1 C6 C2 N.C. N.C. C4 D3 C3 C5 D2 OUT C1 = C2 = C3 = 100 nF C4 = 3.3 pF C5 = C6 = 680 pF R 1 = 2.7 EHT08756 Figure 3 Test Board Layout (3.0 V DECT-Application, f = 1.89 GHz) Data Sheet 11 2001-01-01 GaAs Components CGY 196 Electrical Characteristics 2.4 V DECT-Application f = 1.89 GHz TA = 25 C, f = 1.89 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol min. Supply current Supply current Output Power Overall Power added Efficiency Supply current Supply current Output Power Overall Power added Efficiency Supply current Supply current Output Power Overall Power added Efficiency Off Isolation Load mismatch Limit Values typ. 340 450 25.5 44 320 450 24.7 42 380 450 27.0 44 35 max. - - - - - - - - - - - - - mA mA dBm % mA mA dBm % mA mA dBm % dB Unit Test Conditions IDD IDD PO PAE - - - - - - - - - - - - - VD = 2.4 V; PIN = + 0 dBm VD = 2.4 V; PIN = - 10 dBm VD = 2.4 V; PIN = 0 dBm VD = 2.4 V; PIN = + 0 dBm VD = 2.2 V; PIN = + 0 dBm VD = 2.2 V; PIN = - 10 dBm VD = 2.2 V; PIN = 0 dBm VD = 2.2 V; PIN = + 0 dBm VD = 3.0 V; PIN = + 0 dBm VD = 3.0 V; PIN = - 10 dBm VD = 3.0 V; PIN = 0 dBm VD = 3.0 V; PIN = + 0 dBm VD = 0 V; PIN = 0 dBm PIN = 0 dBm, VD 3.0 V, ZS = 50 Load VSWR = 20:1 for all phase IDD IDD PO PAE IDD IDD PO PAE -S21 - No module damage for - 10 s Data Sheet 12 2001-01-01 GaAs Components CGY 196 Electrical Characteristics 2.4 V DECT-Application f = 1.89 GHz (cont'd) TA = 25 C, f = 1.89 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol min. Load mismatch - Limit Values typ. max. Unit Test Conditions No module damage for - 10 s PIN = 3 dBm, VD 5.0 V, ZS = 50 Load VSWR = 20:1 for all phase Stability - All spurious output - more than 70 dB below desired signal level. All spurious output - more than 70 dB below desired signal level. PIN = 0 dBm, VD = 3.0 V, ZS = 50 Load VSWR = 10:1 for all phase Stability - PIN = 3 dBm, VD = 5.0 V, ZS = 50 Load VSWR = 10:1 for all phase POUT, ID = f (VD), PIN = 0 dBm (pulsed mode: T = 417 s, duty cycle 12.5%), 2.4 V Application 450 mA I 400 350 300 250 200 150 100 50 0 0 1 2 3 4 V5 EHT08757 40 dBm P 30 OUT 20 10 0 -10 -20 -30 -40 -50 POUT I VD Data Sheet 13 2001-01-01 GaAs Components CGY 196 IN CGY 196 C1 C3 R1 D1 V 1.1 C6 C2 C4 N.C. N.C. D3 C5 C3 OUT D2 C1 = C2 = C3 = 100 nF C4 = 3.3 pF C5 = C6 = 680 pF R 1 = 2.7 EHT08758 Figure 4 Test Board Layout (2.4 V DECT-Application, f = 1.89 GHz) Data Sheet 14 2001-01-01 GaAs Components CGY 196 Electrical Characteristics (2.4 GHz ISM-Application) TA = 25 C, f = 2.40 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol Limit Values min. Supply current Supply current Output Power Overall Power added Efficiency Off Isolation Supply current Supply current Output Power Overall Power added Efficiency Off Isolation Load mismatch typ. 300 450 26.0 40 34 300 450 27.5 40 34 max. - - - - - - - - - - mA mA dBm % dB mA mA dBm % dB - Unit Test Conditions IDD IDD PO PAE -S21 - - - - - - - - - - VD = 3.3 V; PIN = + 3 dBm VD = 3.3 V; PIN = - 10 dBm VD = 3.3 V; PIN = + 3 dBm VD = 3.3 V; PIN = + 3 dBm VD = 0 V; PIN = 3 dBm VD = 4.8 V; PIN = + 6 dBm VD = 4.8 V; PIN = - 10 dBm VD = 4.8 V; PIN = + 6 dBm VD = 4.8 V; PIN = + 6 dBm VD = 0 V; PIN = 3 dBm PIN = 3 dBm, VD 3.6 V, ZS = 50 Load VSWR = 20:1 for all phase IDD IDD PO PAE -S21 - No module damage for 10 s Load mismatch - No module damage for 10 s - PIN = 6 dBm, VD 5.0 V, ZS = 50 Load VSWR = 20:1 for all phase Data Sheet 15 2001-01-01 GaAs Components CGY 196 Electrical Characteristics (2.4 GHz ISM-Application) (cont'd) TA = 25 C, f = 2.40 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol Limit Values min. Stability - typ. max. - Unit Test Conditions All spurious output more than 70 dB below desired signal level All spurious output more than 70 dB below desired signal level PIN = 3 dBm, VD = 3.6 V, ZS = 50 Load VSWR = 10:1 for all phase Stability - - PIN = 6 dBm, VD = 5.0 V, ZS = 50 Load VSWR = 10:1 for all phase Electrical Characteristics (2.4 GHz ISM-Application) POUT, PAE = f (PIN), VD = 3.3 V, f = 2.4 GHz (pulsed mode: T = 417 s, duty cycle 12.5% 50 dBm, % POUT , PAE 40 PAE 30 EHT08759 POUT 20 10 0 -10 -5 0 5 dBm 10 PIN Data Sheet 16 2001-01-01 GaAs Components CGY 196 03/09/99 Ansoft Corporation - Microwave Harmonica (tm) v7.5 C:\Daten\Sicherung\Serenade\Spar.ckt 11:15:08 Y1 mess dB(S11(ckt=mess)) 30.00 25.00 20.00 15.00 10.00 35.00 30.00 25.00 20.00 15.00 mess Y1 dB(S22(ckt=mess)) mess Y2 dB(S21(ckt=mess)) Y1 5.00 0.00 -5.00 -10.00 -15.00 -20.00 Y2 10.00 5.00 0.00 -5.00 -10.00 -15.00 0.10 0.40 0.70 1.00 1.30 1.60 1.90 FREQ [GHz] 2.20 2.50 2.80 3.10 EHT08760 Figure 5 S-Parameter VD = 3.3 V, PIN = 0 dBm (pulsed mode: T = 417 s, duty cycle 12.5%) Data Sheet 17 2001-01-01 GaAs Components CGY 196 IN CGY 196 C1 C3 R1 D1 V 1.1 C6 L1 C2 N.C. N.C. C4 C3 D3 C5 D2 OUT C1 = C2 = C3 = 100 nF C4 = 1.8 pF C5 = C6 = 1 nF R 1 = 2.7 L1 = 3.9 nH EHT08761 Figure 6 Test Board Layout (2.4 GHz ISM - Application) Data Sheet 18 2001-01-01 GaAs Components CGY 196 Electrical Characteristics (900 MHz ISM-Application) TA = 25 C, f = 0.90 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol Limit Values min. Supply current Supply current Output Power Overall Power added Efficiency Off Isolation Supply current Supply current Output Power Overall Power added Efficiency Off Isolation typ. 300 450 26.0 40 34 300 450 27.5 40 34 max. - - - - - - - - - - mA mA dBm % dB mA mA dBm % dB Unit Test Conditions IDD IDD PO PAE -S21 - - - - - - - - - - VD = 3.3 V; PIN = + 3 dBm VD = 3.3 V; PIN = - 10 dBm VD = 3.3 V; PIN = + 3 dBm VD = 3.3 V; PIN = + 3 dBm VD = 0 V; PIN = 3 dBm VD = 4.8 V; PIN = + 6 dBm VD = 4.8 V; PIN = - 10 dBm VD = 4.8 V; PIN = + 6 dBm VD = 4.8 V; PIN = + 6 dBm VD = 0 V; PIN = 3 dBm IDD IDD PO PAE -S21 Data Sheet 19 2001-01-01 GaAs Components CGY 196 Electrical Characteristics (900 MHz ISM-Application) (cont'd) TA = 25 C, f = 0.90 GHz, ZS = ZL = 50 , unless otherwise specified Characteristics Symbol Limit Values min. Load mismatch - typ. max. - Unit Test Conditions No module damage for 10 s PIN = 3 dBm, VD 3.6 V, ZS = 50 Load VSWR = 20:1 for all phase Load mismatch - No module damage for 10 s - PIN = 6 dBm, VD 5.0 V, ZS = 50 Load VSWR = 20:1 for all phase Stability - All spurious output more than 70 dB below desired signal level All spurious output more than 70 dB below desired signal level - PIN = 3 dBm, VD = 3.6 V, ZS = 50 Load VSWR = 10:1 for all phase Stability - - PIN = 6 dBm, VD = 5.0 V, ZS = 50 Load VSWR = 10:1 for all phase Data Sheet 20 2001-01-01 GaAs Components CGY 196 Electrical Characteristics (900 MHz ISM-Application) POUT, PAE = f (PIN), VD = 3.5 V, f = 900 MHz [CW]) 50 dBm, % POUT , PAE 40 35 30 25 20 15 10 5 0 -10 -8 -6 -4 -2 0 2 dBm 5 PAE EHT08762 POUT, PAE = f (VD), PIN = 0 dBm, f = 900 MHz [CW]) 50 dBm, % POUT , PAE 40 35 EHT08763 PAE POUT 30 25 20 15 10 5 0 2 2.4 2.8 3.2 3.6 V 4 POUT PIN Vd Data Sheet 21 2001-01-01 GaAs Components CGY 196 07/15/99 Ansoft Corporation - Microwave Harmonica (tm) v7.5 C:\Daten\Sicherung\Serenade\SPAR_ku.ckt 14:51:02 mess Y1 dB(S11(ckt=mess)) 25.00 20.00 15.00 10.00 5.00 35.00 30.00 25.00 20.00 15.00 mess Y2 dB(S21(ckt=mess)) mess Y1 dB(S22(ckt=mess)) Y1 Y2 0.00 -5.00 -10.00 -15.00 -20.00 -25.00 10.00 5.00 0.00 -5.00 -10.00 -15.00 0.50 0.60 0.70 0.80 0.90 1.00 1.10 FREQ [GHz] 1.20 1.30 1.40 1.50 EHT08764 Figure 7 S-Parameter, VD = 3.5 V, PIN = - 5.5 dBm [cw mode] 07/15/99 Ansoft Corporation - Microwave Harmonica (tm) v7.5 C:\Daten\Sicherung\Serenade\SPAR_ku.ckt 15:33:21 mess Y1 dB(S11(ckt=mess)) 25.00 20.00 15.00 10.00 5.00 35.00 30.00 25.00 20.00 15.00 mess Y2 dB(S21(ckt=mess)) mess Y1 dB(S22(ckt=mess)) Y1 0.00 -5.00 -10.00 -15.00 -20.00 -25.00 Y2 10.00 5.00 0.00 -5.00 -10.00 -15.00 0.50 0.60 0.70 0.80 0.90 1.00 1.10 FREQ [GHz] 1.20 1.30 1.40 1.50 EHT08765 Figure 8 Data Sheet S-Parameter, VD = 3.5 V, PIN = - 0.5 dBm [cw mode] 22 2001-01-01 GaAs Components CGY 196 IN CGY 196 R2 C1 R1 D1 V 1.1 C6 C7 N.C. N.C. D3 C2 C4 C5 C3 D2 OUT C1 = 47 pF C2 = 47 pF C3 = 100 nF C4 = 5.6 pF C5 = C6 = 680 pF C7 = 1 pF R 1 = 2.7 R 2 = 10 EHT08766 Figure 9 Test Board Layout (900 MHz ISM - Application) Data Sheet 23 2001-01-01 GaAs Components CGY 196 Package Outlines SCT-598 (Special Package) B 2.9 0.2 0.75 0.6 8 765 1.1 max. 0.15 +0.1 -0.06 2.6 max. 0.25 min. 10 max . 1 234 +0.1 0.2 -0.05 0.5 +0.1 -0.05 2.1 0.15 M 0.15 M B 0.20 M 0.1 max. A B GPW09182 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Sheet 24 1.6 + 0.1 +0.2 acc.to DIN 6784 10 max. A Dimensions in mm 2001-01-01 |
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