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WJA1025
+5V Active-Bias InGaP HBT Gain Block
Product Features
* * * * * * * * Cascadable gain block 50 - 4000 MHz 17 dB Gain @ 1.9GHz +15.5 dBm P1dB @ 1.9GHz +32 dBm OIP3 @ 1.9GHz Operates from +5V @ 60mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package
Product Description
The WJA1025 is a cascadable gain block that offers high linearity in a low-cost surface-mount package. At 1.9 GHz, the WJA1025 typically provides 17 dB gain, +32 dBm OIP3, and +15.5 dBm P1dB. The device is housed in a RoHS-compliant SOT-89 industry-standard SMT package using a NiPdAu plating to eliminate the possibility of tin whiskering.
Functional Diagram
GND 4
1
2 GND
3 RF OUT
Applications
* * * * Wireless Infrastructure General Purpose Cellular GSM, PCS, UMTS
W-CDMA, TD-SCDMA, WiMAX
The WJA1025 consists of Darlington pair amplifiers using a high reliability InGaP/GaAs HBT process technology. The MMIC amplifier is internally matched to 50 and only requires DC-blocking capacitors and a bias inductor for operation. An internal active bias is designed to enable stable performance over temperature. A dropping bias resistor is not required allowing the device to be biased directly from a +5V supply voltage. The broadband amplifier can be directly applied to various current and next generation wireless technologies such as GSM, CDMA, W-CDMA, WiBro, and WiMAX. The WJA1025 is ideal for general purpose applications such as LO buffering, IF amplification and pre-driver stages within the 50 to 4000 MHz frequency range.
RF IN
Function Input Output/Bias Ground
Pin No. 1 3 2, 4
Specifications (1)
Parameter
Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Output IP2 Noise Figure Device Voltage Device Current
Typical Performance (3)
Units
MHz MHz dB dB dB dBm dBm dBm dB V mA
Min
50
Typ
1900 17 15 10 +15.6 +32.4 +41 5.5 5 60
Max
4000
Parameter Units
Frequency S21 S11 S22 Output P1dB Output IP3 (2) Output IP2 Noise Figure MHz dB dB dB dBm dBm dBm dB 500 18.9 -14 -18 +18.2 +34.7 +47.1 4.8 900 18.4 -16 -14 +17.3 +33 +45.4 5.0
Typical
1900 16.8 -37 -10 +15.6 +31.9 +41 5.5 2140 16.2 -31 -10 +14.8 +31.5 +39.7 5.6 2500 15.4 -27 -13 +13.5 +30.6 +36.4 6.0
3. Listed typical performance parameters measured on evaluation board.
1. Test conditions: 25 C, Supply Voltage = +5 V, 50 System. S-parameters and 3OIP measured at device pins. All other specifications measured on evaluation board. 2. 3OIP measured with two tones at an output power of 2 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
End of Life Notice
Last time buy date: Oct. 1, 2010 Recommended replacement part: TQP3M9008
Absolute Maximum Rating
Parameter
Storage Temperature Supply Voltage Input Power jc (junction to paddle) Maximum Junction Temperature
Rating
-55 to +150 C +6.5 V +24 dBm 83.8 C / W 150 C
Ordering Information
Part No.
WJA1025 WJA1025-PCB
Description
+5V Active Bias InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 Package)
50 - 4000 MHz Fully Assembled Eval. Board
Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 1000 pieces on a 7 reel Specifications and information are subject to change without notice Page 1 of 4 April 2010
TriQuint Semiconductor Inc * Phone 1-503-615-9000* FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com
WJA1025
+5V Active-Bias InGaP HBT Gain Block
Typical Evaluation Board RF Performance
Supply Bias = +5 V, Icc = 60 mA
Gain vs. Frequency
20 18
-10 S11, S22 (dB) 0 -5
Return Loss
T = 25 C
Noise Figure vs. Frequency
12 11 10 9 8 7 6 5 4
Gain (dB)
-20 -25 -30
14 12 -40C 10 0 1000 2000 Frequency (MHz) 3000 4000 +25C +85C
-35 -40 0
S11
S22
NF(dB)
16
-15
3 2 3000 4000 0 1000
-40C
+25C
+85C 3000 4000
1000
2000 Frequency (MHz)
2000 Frequency(MHz)
OIP3 vs. Output Power
Freq = 1900MHz
OIP3 vs. Frequency
36 34
Pout=2 dBm /tone
OIP3 vs. Vcc
36 34
OIP3 (dBm)
Freq = 1900MHz
36 34 OIP3 (dBm) 32 30 28 26 24 0 2 4 6 8 Output Power per tone (dBm ) 10
OIP3 (dBm)
32 30 28 26
32 30 28 26 4.7
0
1000
2000
3000
Frequency (MHz)
4.8
4.9
Vcc (V)
5.0
5.1
5.2
OIP2 vs. Frequency
55 50
Pout=2 dBm /tone
P1dB vs. Frequency
P1dB vs. Vcc
Freq = 1900MHz
20 18 P1dB(dBm) 16 14 12
-40C +25C +85C
20 18 P1dB (dBm) 16 14 12 10 4.7
OIP2 (dBm)
45 40 35 30 25 0 1000 2000 3000
10 0
Frequency (MHz)
1000 2000 Frequency(MHz)
3000
4.8
4.9 Vcc (V)
5.0
5.1
5.2
Icc vs. Temperature
65
Vcc = +5V
Icc vs. Vcc
120 100
Icc (mA)
63
Icc (mA)
61
80 60 40 -40C +25C +85C 20
59
57
55
-50 -25 0 25 Tem perature ( C) 50 75 100
4.0
4.5
5.0
Vcc (V)
5.5
6.0
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc * Phone 1-503-615-9000* FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com
Page 2 of 4 April 2010
WJA1025
+5V Active-Bias InGaP HBT Gain Block
Vcc = 5.00V Icc = 60 mA
Application Circuit
R4 0 C3 Bypass Capacitor
RF IN R1 0
L1 RF Choke RF OUT WJA1025 C1 Blocking Capacitor R2 0 C2 Blocking Capacitor
Recommended Component Values (1) Ref. Name Value / Type L1 470 nH ferrite core wire wound inductor (2) C1, C2 1000 pF NPO chip capacitor C3 0.018 F chip capacitor R1, R2, R4 0 (3) C4, C5, C6, Do Not Place (3) R3, R5, R6, R7, R8
1. 2. 3.
Size 0805 0603 0603 0603
The listed values are contained on the evaluation board to achieve optimal broadband performance For lower cost and performance (500 - 4000 MHz) option use 18 nH air core wire wound inductor. Place holders for the 0 resistors and "Do Not Place" references are not needed for final design.
Typical Device Data
S-Parameters (Vdevice = +5 V, ICC = 60 mA, T = 25 C, calibrated to device leads) Freq (GHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) 10 -12.85 -77.05 22.11 164.87 -25.13 50 -14.19 -152.32 19.58 168.33 -22.87 100 -14.21 -165.96 19.35 168.73 -22.76 200 -14.11 -173.50 19.19 163.14 -22.64 400 -13.61 -177.58 19.15 149.92 -22.60 600 -12.87 178.85 19.00 135.94 -22.62 800 -12.55 173.55 18.77 121.91 -22.51 1000 -12.61 164.24 18.61 108.26 -22.49 1200 -12.86 152.84 18.29 93.65 -22.48 1400 -13.00 142.18 17.95 80.02 -22.35 1600 -13.52 132.80 17.67 65.69 -22.41 1800 -14.61 126.51 17.30 51.45 -22.28 2000 -17.13 119.56 16.91 37.76 -22.28 2200 -22.24 110.52 16.34 23.48 -22.26 2400 -39.41 104.25 15.69 9.57 -22.24 2600 -26.52 -105.93 15.05 -4.25 -22.18 2800 -18.85 -119.90 14.26 -17.37 -22.12 3000 -14.60 -131.55 13.41 -31.11 -21.94 3200 -11.79 -141.13 12.49 -43.51 -21.88 3400 -9.85 -148.69 11.44 -56.00 -21.80 3600 -8.43 -157.87 10.43 -67.63 -21.70 3800 -7.44 -168.60 9.52 -78.22 -21.49 4000 -6.55 -179.99 8.41 -89.17 -21.49 S12 (ang) 20.66 5.69 2.34 -0.94 -4.22 -8.09 -11.63 -14.60 -17.94 -21.86 -25.23 -28.01 -32.24 -35.27 -38.29 -41.60 -45.32 -49.10 -53.46 -56.71 -60.90 -64.48 -68.82 S22 (dB) -8.70 -17.97 -20.84 -21.65 -20.44 -18.63 -16.59 -14.32 -12.60 -11.42 -10.77 -10.30 -9.72 -9.14 -8.51 -8.22 -8.12 -8.05 -7.85 -7.62 -7.20 -7.01 -7.07 S22 (ang) -47.21 -102.07 -121.78 -132.99 -134.99 -139.25 -142.32 -147.99 -153.76 -159.72 -166.91 -174.79 177.45 169.23 162.75 156.67 150.77 143.93 138.14 131.91 127.90 126.16 122.98
Device S-parameters are available for Download from the website at: http://www.wj.com
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc * Phone 1-503-615-9000* FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com
Page 3 of 4 April 2010
WJA1025
+5V Active-Bias InGaP HBT Gain Block
Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Outline Drawing
Product Marking
The WJA1025 will be marked with an "A1025" designator with an alphanumeric lot code marked below the part designator.
A1025 XXXX-X
Tape and reel specifications for this part are located on the website in the "Application Notes" section.
MSL / ESD Rating
Land Pattern
ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard:
Class 1C Passes 1000V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes 1000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees.
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc * Phone 1-503-615-9000* FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com
Page 4 of 4 April 2010

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