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PROFET(R) BTS 442 D2
Smart Highside Power Switch
Features
* Overload protection * Current limitation * Short-circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection1) * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * CMOS diagnostic output * Open load detection in ON-state * CMOS compatible input * Loss of ground and loss of Vbb protection2) * Electrostatic discharge (ESD) protection
Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation
Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr)
63 V 4.5 ... 42 V 18 m 21 A 70 A
TO-220AB/5
5
5
5
Standard
1 Straight leads
1
SMD
Application
* C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * All types of resistive, inductive and capacitve loads * Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS(R) chip on chip technology. Fully protected by embedded protection functions.
R bb
+ V bb
3
Voltage source
Overvoltage protection
Current limit
Gate protection
V Logic
Voltage sensor Charge pump Level shifter Rectifier Open load ESD Logic detection Limit for unclamped ind. loads
OUT
2
IN
Temperature sensor
5
Load
4
ST
Short circuit detection
GND
(R) PROFET
Load GND
1
Signal GND
1) 2)
No external components required, reverse load current limited by connected load. Additional external diode required for charged inductive loads
Semiconductor Group
Page 1 of 14
1999-Mar.-22
BTS 442 D2
Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load
Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 , RL= 1.1 , td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation, single pulse Tj=150 C: Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC)
see internal circuit diagrams page 6...
Symbol Vbb VLoad dump3)
Values 63 80 self-limited -40 ...+150 -55 ...+150 167 2.1 2.0 -0.5 ... +6 5.0 5.0 0.75 75 tbd
Unit V V A C W J kV V mA
IL Tj Tstg Ptot EAS VESD VIN IIN IST
Thermal resistance
chip - case: junction - ambient (free air): SMD version, device on pcb 4):
RthJC RthJA
K/W
3) 4)
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air.
Semiconductor Group
Page 2
1999-Mar.-22
BTS 442 D2 Electrical Characteristics
Parameter and Conditions
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5)
IL = 5 A
Nominal load current (pin 3 to 5) ISO Proposal: VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, VIN= 0, see diagram page 7, Tj =-40...+150C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C
Tj=25 C: RON Tj=150 C: IL(ISO) IL(GNDhigh)
-17 --
15 28 21 --
18 35 -1
m A mA s
ton toff
dV /dton -dV/dtoff
100 10 0.2 0.4
-----
350 130 2 5
V/s V/s
Operating Parameters Operating voltage 5) Tj =-40...+150C: Undervoltage shutdown Tj =-40...+150C: Undervoltage restart Tj =-40...+150C: Undervoltage restart of charge pump see diagram page 12 Tj =-40...+150C: Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: 6) Overvoltage protection Tj =-40C: Ibb=40 mA Tj =25...+150C: Standby current (pin 3) Tj=-40...+25C: VIN=0, IST=0, Tj=150C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1) 7), VIN=5 V
Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp)
Vbb(under)
4.5 2.4 ---42 42 -60 63 -----
---6.5 0.2 --0.2 -67 12 18 6 1.1
42 4.5 4.5 7.5 -52 ---25 60 ---
V V V V V V V V V A A mA
Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) Ibb(off) IL(off) IGND
5) 6) 7)
At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT Vbb - 2 V see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load. Add IST, if IST > 0, add IIN, if VIN>5.5 V
Semiconductor Group
Page 3
1999-Mar.-22
BTS 442 D2
Parameter and Conditions
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Protection Functions Initial peak short circuit current limit (pin 3 to 5) 8), IL(SCp) ( max 400 s if VON > VON(SC) ) Tj =-40C: Tj =25C: Tj =+150C: Repetitive short circuit current limit IL(SCr) Tj = Tjt (see timing diagrams, page 10) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150C: td(SC)
min value valid only, if input "low" time exceeds 30 s
--45 30 80
-95 -70 --
140 ---400
A
A s V V C K J
Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), IL= 30 mA Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation 9), Tj Start = 150 C, single pulse Vbb = 12 V: Vbb = 24 V: Reverse battery (pin 3 to 1) 10) Integrated resistor in Vbb line Diagnostic Characteristics Open load detection current
(on-condition)
VON(CL) VON(SC) Tjt Tjt EAS ELoad12 ELoad24
-Vbb Rbb
--150 ---
58 8.3 -10 --
----2.1 1.7 1.2 32 --
---
-120
V
Tj=-40 C: IL (OL) Tj=25..150C:
2 2
---
1900 1500
mA
8) 9)
Short circuit current limit for max. duration of td(SC) max=400 s, prior to shutdown
While demagnetizing load inductance, dissipated energy in PROFET is EAS= VON(CL) * iL(t) dt, approx. VON(CL) 2 EAS= 1/2 * L * IL * ( ), see diagram page 8 VON(CL) - Vbb 10) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current IGND of 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external GND-resistor (150 ). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).
Semiconductor Group
Page 4
1999-Mar.-22
BTS 442 D2
Parameter and Conditions
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Input and Status Feedback11) Input turn-on threshold voltage
Tj =-40..+150C:
Input turn-off threshold voltage
VIN(T+) VIN(T-)
VIN(T) IIN(off)
1.5 1.0 -1 10 80 350
--0.5 -25 200 --
2.4 --30 50 400 1600
V V V A A s s
Tj =-40..+150C:
Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V On state input current (pin 2), VIN = 3.5 V Status invalid after positive input slope (short circuit) Tj=-40 ... +150C: Status invalid after positive input slope (open load) Tj=-40 ... +150C: Status output (CMOS) Tj =-40...+150C, IST= - 50 A: Tj =-40...+150C, IST = +1.6 mA: Max. status current for current source (out): current sink (in) : valid status output, Tj =-40...+150C
IIN(on) td(ST SC) td(ST)
VST(high)12) VST(low) -IST +IST13)
4.4 ----
5.1 ----
6.5 0.4 0.25 1.6
V mA
11)
If a ground resistor RGND is used, add the voltage drop across this resistor. VSt high Vbb during undervoltage shutdown 13) No current sink capability during undervoltage shutdown
12)
Semiconductor Group
Page 5
1999-Mar.-22
BTS 442 D2 Truth Table
Inputlevel Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level L H L H L H L H L H L H L H Output level L H
14)
Status 442 D2 H H H L H L H H (L15)) L L L16) L16) L L 442 E2 H H H L H L H H (L15)) L L H H H H
H L L H H L L L L L L
Terms
Ibb I IN 2 I ST V V bb R IN VST 4 ST GND 1 GND IGND VOUT IN 3 Vbb IL PROFET OUT 5 VON
Status output
V
Logic
ST
GND
ESDZD
Zener diode: 6.1 V typ., max 5 mA, VLogic 5 V typ, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).
Input circuit (ESD protection)
R IN I
Short Circuit detection
Fault Condition: VON > 8.3 V typ.; IN high
+ V bb
ESDZDI1 ZDI2 GND
I
I
V ON
OUT
ZDI1 6.1 V typ., ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).
Logic unit
Short circuit detection
14) 15) 16)
Power Transistor off, high impedance Low resistance short Vbb to output may be detected by no-load-detection No current sink capability during undervoltage shutdown
Semiconductor Group
Page 6
1999-Mar.-22
BTS 442 D2
Inductive and overvoltage output clamp
+ V bb V Z V ON
GND disconnect
3 IN Vbb PROFET OUT
2
OUT GND
5
4 V bb V IN V ST
ST GND 1 V GND
VON clamped to 58 V typ.
Overvolt. and reverse batt. protection
+ V bb
Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available.
V
R IN
Z
R bb
GND disconnect with GND pull up
3
IN
Logic
V
R ST
ST GND
OUT
2
IN
Vbb PROFET OUT
PROFET
4 ST GND 1 V V bb V IN ST V
5
R GND
Signal GND
Rbb = 120 typ., VZ +Rbb*40 mA = 67 V typ., add RGND, RIN, RST for extended protection
GND
Open-load detection
ON-state diagnostic condition: VON < RON * IL(OL); IN high
+ V bb
Any kind of load. If V GND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available.
Vbb disconnect with charged inductive load
3 high 2 IN Vbb PROFET 4 ST GND 1 V OUT
ON
VON
5
OUT
Logic unit
Open load detection
bb
Semiconductor Group
Page 7
1999-Mar.-22
BTS 442 D2
3 high 2 IN Vbb PROFET 4 ST GND 1 OUT
Inductive Load switch-off energy dissipation
E bb E AS
5
IN
Vbb PROFET OUT
ELoad
=
V bb
ST GND
EL
ER
Energy dissipated in PROFET EAS = Ebb + EL - ER.
ELoad < EL, EL = 1/2 * L * I L
2
Semiconductor Group
Page 8
1999-Mar.-22
BTS 442 D2 Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection , protection against loss of ground Type Logic version
BTS 442D2 442E2 D X X X X E
Overtemperature protection Tj >150 C, latch function 17)18) Tj >150 C, with auto-restart on cooling Short-circuit to GND protection
switches off when VON>8.3 V typ.17) (when first turned on after approx. 200 s)
Open load detection
in OFF-state with sensing current 30 A typ. in ON-state with sensing voltage drop across power transistor X X X X X -19) X X X X X X X X X X -19) X -
Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart Status feedback for
overtemperature short circuit to GND short to Vbb open load undervoltage overvoltage
Status output type
CMOS Open drain
Output negative voltage transient limit
(fast inductive load switch off) to Vbb - VON(CL) X X X X
Load current limit
high level (can handle loads with high inrush currents) medium level low level (better protection of application)
Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 18) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 19) Low resistance short V to output may be detected by no-load-detection bb
17)
Semiconductor Group
Page 9
1999-Mar.-22
BTS 442 D2
Timing diagrams
Figure 1a: Vbb turn on: Figure 2b: Switching an inductive load
IN IN t d(bb IN) V bb ST
*)
td(ST)
V
OUT
V A
OUT
ST CMOS t A
in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 s
I
L
IL(OL) t
*) if the time constant of load is too large, open-load-status may occur
Figure 2a: Switching a lamp, Figure 3a: Turn on into short circuit,
IN IN
ST ST
V
OUT
V
OUT
td(SC) I
L
I
L
t t
td(SC) approx. 200s if Vbb - VOUT > 8.3 V typ.
Semiconductor Group
Page 10
1999-Mar.-22
BTS 442 D2
Figure 3b: Turn on into overload, Figure 4a: Overtemperature, Reset if (IN=low) and (TjIN
IN
IL I L(SCp) I L(SCr) ST
V
OUT
ST t
T
J
t
Heating up may require several milliseconds, Vbb - VOUT < 8.3 V typ. , Vbb - VOUT < 8.3 V typ. *) ST goes high , when VIN=low and TjFigure 3c: Short circuit while on:
Figure 5a: Open load: detection in ON-state, turn on/off to open load
IN
IN
ST ST
t d(ST)
V V OUT
OUT
I
L
IL
open t
**) t
**) current peak approx. 20 s
Semiconductor Group
Page 11
1999-Mar.-22
BTS 442 D2
Figure 5b: Open load: detection in ON-state, open load occurs in on-state Figure 6b: Undervoltage restart of charge pump VON [V]
V on IN
VON(CL) off
t d(ST OL1) ST
t
d(ST OL2)
V
OUT
V off
bb(over)
V I
L
V V
bb(u rst)
bb(o rst)
normal
open
normal V t
bb(under)
bb(u cp)
on V bb
td(ST OL1) = tbd s typ., t d(ST OL2) = tbd s typ
Vbb [V]
charge pump starts at Vbb(ucp) =6.5 V typ.
Figure 7a: Overvoltage: Figure 6a: Undervoltage:
IN IN Vbb VON(CL) Vbb(over) V bb(o rst)
Vbb V Vbb(u cp) V bb(u rst)
bb(under)
V V OUT
OUT
ST ST CMOS t t
Semiconductor Group
Page 12
1999-Mar.-22
BTS 442 D2
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5
BTS 442 D2
Ordering code Q67060-S6205-A2
TO-220AB/5, Option E3043 Ordering code
BTS 442 D2 E3043 Q67060-S6205-A3
SMD TO-220AB/5, Opt. E3062 Ordering code
BTS442D2 E3062A T&R: Q67060-S6205-A4
Semiconductor Group
Page 13
1999-Mar.-22
BTS 442 D2
Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, D-81541 Munchen (c) Siemens AG 1999. All Rights Reserved Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing: Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorised for such purpose! Critical components20) of the Semiconductor Group of Siemens AG, may only be used in life supporting devices or systems 21) with the express written approval of the Semiconductor Group of Siemens AG.
20) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 21) Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered.
Semiconductor Group
Page 14
1999-Mar.-22

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