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4N32/ 4N33
Vishay Semiconductors
Optocoupler, Photodarlington Output, High Gain, With Base Connection
Features
* * * * * Very high current transfer ratio, 500 % Min. High isolation resistance, 1011 Typical Standard plastic DIP package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
i179005
A C NC
1 2 3
6B 5C 4E
Agency Approvals
* UL1577, File No. E52744 System Code H or J, Double Protection * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 * BSI IEC60950 IEC60065
e3
Pb
Pb-free
Order Information
Part 4N32 4N33 4N32-X007 4N32-X009 4N33-X007 4N33-X009 Remarks CTR > 500 %, DIP-6 CTR > 500 %, DIP-6 CTR > 500 %, SMD-6 (option 7) CTR > 500 %, SMD-6 (option 9) CTR > 500 %, SMD-6 (option 7) CTR > 500 %, SMD-6 (option 9)
Description
The 4N32 and 4N33 are optically coupled isolators with a gallium arsenide infrared LED and a solicon photodarlington sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields.
For additional information on the available options refer to Option Information.
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Peak reverse voltage Forward continuous current Power dissipation Derate linearly from 55 C Test condition Symbol VR IF Pdiss Value 3.0 60 100 1.33 Unit V mA mW mW/C
Document Number 83736 Rev. 1.4, 26-Jan-05
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4N32/ 4N33
Vishay Semiconductors Output
Parameter Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base breakdown voltage Emitter-collector breakdown voltage Collector (load) current Power dissipation Derate linearly Test condition Symbol BVCEO BVEBO BVCBO BVECO IC Pdiss Value 30 8.0 50 5.0 125 150 2.0 Unit V V V V mA mW mW/C
Coupler
Parameter Total dissipation Derate linearly Isolation test voltage (between emitter and detector, Standard Climate: 23 C/ 50 %RH, \\nDIN 500 14) Leakage Path Air Path Isolation Resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storange temperature Operating temperature Lead soldering time at 260 C RIO RIO Tamb Tstg VISO Test condition Symbol Ptot Value 250 3.3 5300 Unit mW mW/ VRMS
7.0 7.0 1012
11
mm min. mm min. C C s
10
- 55 to + 150 - 55 to + 100 10
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Reverse current Capacitance Test condition IF = 50 mA VR = 3.0 V VR = 0 V Symbol VF IR CO Min Typ. 1.25 0.1 25 Max 1.5 100 Unit V pF
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Document Number 83736 Rev. 1.4, 26-Jan-05
4N32/ 4N33
Vishay Semiconductors Output
Parameter Collector-emitter breakdown voltage1) Collector-base breakdown voltage1) Emitter-base breakdown voltage1) Emitter-collector breakdown voltage1) Collector-emitter leakage current
1)
Test condition IC = 100 A, IF = 0 IC = 100 A, IF = 0 IC = 100 A, IF = 0 IC = 100 A, IF = 0 VCE = 10 V, IF = 0 IC = 0.5 mA, VCE = 5.0 V
Symbol BVCEO BVCBO BVEBO BVECO ICEO hFE
Min 30 50 8.0 5.0
Typ.
Max
Unit V V V
10 1.0 100
V nA
13
Indicates JEDEC registered values
Coupler
Parameter Colector emitter saturation voltage Coupling capacitance Test condition Symbol VCEsat Min Typ. 1.0 1.5 Max Unit V pF
Current Transfer Ratio
Parameter Current Transfer Ratio Test condition VCE = 10 V, IF = 10 mA, Symbol CTR Min 500 Typ. Max Unit %
Switching Characteristics
Parameter Turn on time Turn off time Test condition VCC = 10 V, IC = 50 mA IF = 200 mA, RL = 180 Symbol ton toff Min Typ. Max 5.0 100 Unit s s
Typical Characteristics (Tamb = 25 C unless otherwise specified)
1.2
NCTRce - Normalized CTRce
1.0 0.8 0.6 0.4 0.2
NIce - Normalized Ice
Normalized to: Vce = 5 V IF = 10 mA Ta = 25C Vce = 5 V
10
1
Normalized to: Ta = 25C IF = 10 mA Vce = 5 V
Vce = 5 V
Vce = 1V .1
.01
Vce =1V 0.0 .1 1 10 100 1000
IF - LED Current - mA
i4n32-33_02
.001 .1
i4n32-33_03
10 1 IF - LED Current - mA
100
Figure 1. Normalized Non-saturated and Saturated CTRCE vs. LED Current
Figure 2. Normalized Non-Saturated and Saturated CollectorEmitter Current vs. LED Current
Document Number 83736 Rev. 1.4, 26-Jan-05
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4N32/ 4N33
Vishay Semiconductors
10
NIcb - Normalized Icb
Normalized to:
tpHL - High/Low Propagation delay - s
20 1k 15 Ta = 25C Vcc = 5 V Vth = 1.5 V
1
Ta = 25C Vcb = 3.5 V IF = 10 mA
.1
10 100 5
.01
.001 .1
i4n32-33_04
0 0 5 10 15 20 IF - LED Current - mA
1 10 IF - LED Current - mA
100
i4n32-33_07
Figure 3. Normalized Collector-Base Photocurrent vs. LED Current
Figure 6. High to low Propagation Delay vs. Collector Load Resistance and LED Current
10000
HFE - Forward Transfer Gain
Ta = 25C
Vce = 5 V IF VCC RL tD tR tPLH VTH=1.5 V tF IF VO
8000 6000 4000 2000 0 .01 Vce = 1 V
VO
.1
1
10
100
tPHL
tS
Ib - Base Current - A
i4n32-33_05 i4n32-33_08
Figure 4. Non-Saturated and Saturated HFE vs. Base Current
Figure 7. Switching Waveform and Switching Schematic
80
tpLH - Low/High Propagation Delay - S
Ta = 25C, Vcc = 5V Vth = 1.5 V 60
1.0 k
220 i 40 470 20 100 0 0 5 10 15 20 IF - LED Current - mA
i4n32-33_06
Figure 5. Low to High Propagation Delay vs. Collector Load Resistance and LED Current
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Document Number 83736 Rev. 1.4, 26-Jan-05
4N32/ 4N33
Vishay Semiconductors Package Dimensions in Inches (mm)
For 4N32/33..... see DIL300-6 Package dimension in the Package Section. For products with an option designator (e.g. 4N32-X007 or 4N33-X009)..... see DIP-6 Package dimensions in the Package Section.
DIL300-6 Package Dimensions
14770
DIP-6 Package Dimensions
2 1 pin one ID
3 .248 (6.30) .256 (6.50) 4
5
6
ISO Method A
.335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55)
i178004
.048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81)
.300 (7.62) typ.
18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81)
.114 (2.90) .130 (3.0)
Document Number 83736 Rev. 1.4, 26-Jan-05
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4N32/ 4N33
Vishay Semiconductors
Option 7
.300 (7.62) TYP .
Option 9
.375 (9.53) .395 (10.03) .300 (7.62) ref.
.028 (0.7) MIN.
.180 (4.6) .160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX.
.012 (.30) typ.
.020 (.51) .040 (1.02)
.315 (8.00) min.
15 max.
18494
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Document Number 83736 Rev. 1.4, 26-Jan-05
4N32/ 4N33
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83736 Rev. 1.4, 26-Jan-05
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