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| ON Semiconductort High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features: BUL45D2 POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS * Low Base Drive Requirement * High Peak DC Current Gain (55 Typical) @ IC = 100 mA * Extremely Low Storage Time Min/Max Guarantees Due to the * * * H2BIP Structure which Minimizes the Spread Integrated Collector-Emitter Free Wheeling Diode Fully Characterized and Guaranteed Dynamic VCE(sat) "6 Sigma" Process Providing Tight and Reproductible Parameter Spreads It's characteristics make it also suitable for PFC application. CASE 221A-09 TO-220AB IIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Rating Symbol VCEO VCBO VCES Value 400 700 700 12 Unit Vdc Vdc Vdc Vdc Adc Adc Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage VEBO IC ICM IB IBM PD Collector Current -- Continuous -- Peak (1) Base Current -- Continuous Base Current -- Peak (1) 5 10 2 4 *Total Device Dissipation @ TC = 25_C *Derate above 25C Operating and Storage Temperature 75 0.6 Watt W/_C _C TJ, Tstg -65 to 150 THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case -- Junction to Ambient _C/W RJC RJA TL 1.65 62.5 260 Maximum Lead Temperature for Soldering Purposes: 1/8 from case for 5 seconds _C (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. (c) Semiconductor Components Industries, LLC, 2001 1 March, 2001 - Rev. 2 Publication Order Number: BUL45D2/D II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIII I I II I I I I II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIII III III I I I I I I I II I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I II I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I I II I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I III I I I I I I I II I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I III I I I I I I I II I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I I II I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I II I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) DIODE CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Collector Cutoff Current (VCE = 500 V, VEB = 0) Forward Recovery Time (see Figure 27) (IF = 1 Adc, di/dt = 10 A/s) Forward Diode Voltage (IEC = 1 Adc) DC Current Gain (IC = 0.8 Adc, VCE = 1 Vdc) Collector-Emitter Saturation Voltage (IC = 0.8 Adc, IB = 80 mAdc) Base-Emitter Saturation Voltage (IC = 0.8 Adc, IB = 80 mAdc) Emitter-Cutoff Current (VEB = 10 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Emitter-Base Breakdown Voltage (IEBO = 1 mA) Collector-Base Breakdown Voltage (ICBO = 1 mA) Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) (IC = 2 Adc, VCE = 1 Vdc) (IC = 0.8 Adc, IB = 40 mAdc) (IC = 2 Adc, IB = 0.4 Adc) (IC = 2 Adc, IB = 0.4 Adc) (IF = 0.4 Adc, di/dt = 10 A/s) (IF = 2 Adc, di/dt = 10 A/s) (IEC = 0.4 Adc) (IEC = 2 Adc) Characteristic @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 125C @ TC = 25CIIIII @ TC = 25CIIIII @ TC = 25C http://onsemi.com BUL45D2 2 VCEO(sus) Symbol VCE(sat) VBE(sat) VCBO VEBO ICEO IEBO ICES VEC hFE Tfr Min 700 400 22 20 12 10 7 0.85 0.62 1.04 0.7 0.28 0.32 14.1 0.46 0.62 0.32 0.38 0.89 0.79 Typ 320 360 330 910 450 1.2 0.8 0.7 14 9.5 34 29 Max 0.75 1 100 100 500 100 100 1.2 1.6 1.5 0.4 0.5 1 0.9 0.5 0.6 1 0.9 Adc Adc Adc Unit Vdc Vdc Vdc Vdc Vdc ns -- V IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I I IIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I III I I I I I IIIII I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIII I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I III I I I I I IIIII I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I III I I I I I IIIII I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII II I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII II I III I I I I I I I IIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I IIIII II I IIIII II I IIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIII IIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H) SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 20 s) DYNAMIC SATURATION VOLTAGE DYNAMIC CHARACTERISTICS Dynamic Saturation Voltage: Determined 1 s and 3 s respectively after rising IB1 reaches 90% of final IB1 Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Turn-off Time Turn-on Time Turn-off Time Turn-on Time Input Capacitance (VEB = 8 Vdc) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) IC = 2 Adc, IB1 = 0.4 Adc IB2 = 0.4 Adc 04 VCC = 300 Vdc IC = 2 Adc, IB1 = 0.4 Adc IB2 = 1 Adc VCC = 300 Vdc Characteristic IC = 1 A IB1 = 100 mA VCC = 300 V IC = 2 A IB1 = 0 8 A 0.8 VCC = 300 V IC = 1 Adc IB1 = 100 mAdc IB2 = 500 mAdc IC = 2 Adc IB1 = 0.4 Adc IB2 = 0.4 Adc @ 3 s @ 1 s @ 3 s @ 1 s @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C http://onsemi.com BUL45D2 3 VCE(dsat) Symbol Cob Cib ton ton toff toff fT tc ts tc ts tf tf 1.95 Min 2.1 0.72 1.05 1.15 1.5 0.35 2.7 Typ 80 105 90 105 225 450 340 90 110 2.9 3.1 0.4 1.5 3.9 12 3.7 9.4 95 95 90 93 50 13 2.25 Max 150 150 150 150 150 500 0.9 2.4 1.3 75 300 MHz Unit pF pF s s s s ns ns ns ns ns V V V V ns BUL45D2 TYPICAL STATIC CHARACTERISTICS 100 VCE = 1 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 80 60 40 20 0 0.001 TJ = 125C TJ = 25C 80 60 40 20 0 0.001 100 VCE = 5 V TJ = 125C TJ = 25C TJ = -20C TJ = -20C 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain @ 5 Volt 4 TJ = 25C VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) 3 10 IC/IB = 5 TJ = 25C 2 5A 1 IC = 500 mA 0 0.001 0.01 1A 2A 3A 4A 1 TJ = 125C TJ = -20C 10 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 0.1 1 IB, BASE CURRENT (AMPS) Figure 3. Collector Saturation Region Figure 4. Collector-Emitter Saturation Voltage 10 IC/IB = 10 VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) 10 IC/IB = 20 1 TJ = -20C TJ = 125C TJ = 25C 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 1 TJ = -20C TJ = 25C TJ = 125C 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 5. Collector-Emitter Saturation Voltage Figure 6. Collector-Emitter Saturation Voltage http://onsemi.com 4 BUL45D2 TYPICAL STATIC CHARACTERISTICS 10 IC/IB = 5 VBE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) 10 IC/IB = 10 TJ = 25C 1 TJ = -20C 1 TJ = -20C TJ = 125C TJ = 25C TJ = 125C 0.1 0.001 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 10 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 7. Base-Emitter Saturation Region Figure 8. Base-Emitter Saturation Region 10 FORWARD DIODE VOLTAGE (VOLTS) IC/IB = 20 VBE , VOLTAGE (VOLTS) 10 1 TJ = -20C TJ = 125C TJ = 25C 1 25C 125C 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 0.1 0.01 1 0.1 REVERSE EMITTER-COLLECTOR CURRENT (AMPS) 10 Figure 9. Base-Emitter Saturation Region Figure 10. Forward Diode Voltage 1000 Cib (pF) C, CAPACITANCE (pF) TJ = 25C f(test) = 1 MHz BVCER (VOLTS) 1000 900 800 700 600 500 BVCER(sus) @ 200 mA BVCER @ 10 mA TJ = 25C 100 Cob (pF) 10 1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 400 10 100 RBE () 1000 Figure 11. Capacitance Figure 12. BVCER = f(ICER) http://onsemi.com 5 BUL45D2 TYPICAL SWITCHING CHARACTERISTICS 1000 800 600 400 200 0 IC/IB = 10 IC/IB = 5 IBon = IBoff VCC = 300 V PW = 20 s TJ = 125C TJ = 25C 5 4 t, TIME ( s) 3 2 1 0 TJ = 125C TJ = 25C 0.5 1 1.5 2 IC/IB = 5 IC/IB = 10 IBon = IBoff VCC = 300 V PW = 20 s t, TIME (ns) 0.5 1 2 2.5 3 1.5 IC, COLLECTOR CURRENT (AMPS) 3.5 4 2.5 3 3.5 4 IC, COLLECTOR CURRENT (AMPS) Figure 13. Resistive Switch Time, ton Figure 14. Resistive Switch Time, toff 4 IC/IB = 5 3 t, TIME ( s) IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H t, TIME ( s) 5 4 3 2 1 0 0 2 1 3 IC, COLLECTOR CURRENT (AMPS) 4 TJ = 125C TJ = 25C 0 1 3 2 IC, COLLECTOR CURRENT (AMPS) 4 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 2 1 TJ = 125C TJ = 25C 0 Figure 15. Inductive Storage Time, tsi @ IC/IB = 5 600 500 400 t, TIME (ns) 300 200 100 100 0 tfi 0 1 3 2 IC, COLLECTOR CURRENT (AMPS) 4 0 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H TJ = 125C TJ = 25C tc t, TIME (ns) 400 Figure 16. Inductive Storage Time, tsi @ IC/IB = 10 300 IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 H 200 TJ = 125C TJ = 25C 0 1 2 3 IC, COLLECTOR CURRENT (AMPS) 4 Figure 17. Inductive Switching, tc & tfi @ IC/IB = 5 http://onsemi.com 6 Figure 18. Inductive Switching, tfi @ IC/IB = 10 BUL45D2 TYPICAL SWITCHING CHARACTERISTICS 1500 IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 H TJ = 125C TJ = 25C t si , STORAGE TIME (s) 4 5 TJ = 125C TJ = 25C IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 1000 t, TIME (ns) IC = 1 A 500 3 IC = 2 A 0 0 2 1 3 IC, COLLECTOR CURRENT (AMPS) 4 2 0 5 10 hFE, FORCED GAIN 15 20 Figure 19. Inductive Switching, tc @ IC/IB = 10 Figure 20. Inductive Storage Time 450 IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 H TJ = 125C TJ = 25C IC = 1 A 1400 1200 t c , CROSSOVER TIME (ns) 1000 800 600 400 200 20 0 2 4 6 8 10 12 14 hFE, FORCED GAIN 16 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H TJ = 125C TJ = 25C IC = 2 A 350 t fi , FALL TIME (ns) 250 150 IC = 2 A 50 2 4 6 8 10 12 14 hFE, FORCED GAIN 16 18 IC = 1 A 18 20 Figure 21. Inductive Fall Time Figure 22. Inductive Crossover Time 3000 t fr , FORWARD RECOVERY TIME (ns) IB1 = IB2 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 360 dI/dt = 10 A/s TC = 25C 340 2000 t, TIME (ns) IB = 50 mA 1000 IB = 100 mA IB = 200 mA IB = 500 mA 0 0.5 1 IB = 1 A 320 3 1.5 2 2.5 IC, COLLECTOR CURRENT (AMPS) 3.5 4 300 0 0.5 1 1.5 IF, FORWARD CURRENT (AMP) 2 Figure 23. Inductive Storage Time, tsi http://onsemi.com 7 Figure 24. Forward Recovery Time tfr BUL45D2 TYPICAL SWITCHING CHARACTERISTICS 10 VCE dyn 1 s dyn 3 s 0V 9 8 7 6 5 4 90% IB 1 s IB 3 s TIME 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 Vclamp 10% Vclamp tc IC tsi 90% IC tfi 10% IC Figure 25. Dynamic Saturation Voltage Measurements Figure 26. Inductive Switching Measurements VFRM VF 0.1 VF VFR (1.1 VF unless otherwise specified) VF tfr 0 IF 10% IF 0 2 4 6 8 10 Figure 27. tfr Measurements http://onsemi.com 8 BUL45D2 TYPICAL SWITCHING CHARACTERISTICS Table 1. Inductive Load Switching Drive Circuit +15 V 1 F 150 3W 100 3W MTP8P10 100 F VCE PEAK MTP8P10 MPF930 MUR105 RB1 Iout A 50 COMMON 500 F 150 3W MJE210 MTP12N10 RB2 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA VCE IB1 IB IB2 IC PEAK MPF930 +10 V 1 F -Voff Inductive Switching L = 200 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 TYPICAL CHARACTERISTICS 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 6 5 4 3 2 1 0 200 0V -5 V -1.5 V 800 TC 125C GAIN 5 LC = 2 mH 10 1 s 10 s 5 ms DC 1 ms EXTENDED SOA 1 0.1 0.01 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 300 400 500 600 700 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 28. Forward Bias Safe Operating Area Figure 29. Reverse Bias Safe Operating Area http://onsemi.com 9 BUL45D2 TYPICAL CHARACTERISTICS 1 0.8 0.6 THERMAL DERATING 0.4 0.2 0 SECOND BREAKDOWN DERATING POWER DERATING FACTOR 20 40 100 80 120 60 TC, CASE TEMPERATURE (C) 140 160 Figure 30. Forward Bias Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 28 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 28 may be found at any case temperature by using the appropriate curve on Figure 30. TJ(pk) may be calculated from the data in Figure 31. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 29). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. TYPICAL THERMAL RESPONSE 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 P(pk) RJC(t) = r(t) RJC RJC = 2.5C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) t2 DUTY CYCLE, D = t1/t2 0.1 1 t, TIME (ms) 10 t1 100 1000 Figure 31. Typical Thermal Response (ZJC(t)) for BUL45D2 http://onsemi.com 10 BUL45D2 PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 -T- B 4 F T S C Q 123 A U K H Z L V G D N R J http://onsemi.com 11 BUL45D2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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