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| ON Semiconductort NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. BU323AP DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS COLLECTOR * Collector-Emitter Sustaining Voltage -- * * * VCER(sus) = 475 Vdc 125 Watts Capability at 50 Volts VCE Sat Specified at - 40_C = 2.0 V Max. at IC = 6.0 A Photoglass Passivation for Reliability and Stability BASE 1k 30 EMITTER CASE 340D-02 TO-218 TYPE IIIIIIIIIII I I I I I IIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Rating Symbol Value 400 475 6.0 10 16 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage VCEO(sus) VCEV VEB IC ICM IB IBM PD Collector Current -- Continuous -- Peak (Note 1) Base Current -- Continuous -- Peak (Note 1) 3.0 Total Power Dissipation -- TC = 25_C -- TC = 100_C Derate above 25_C 125 100 1.0 Watts Watts W/_C _C Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol RJC TL Max 1.0 Unit Thermal Resistance, Junction to Case _C/W _C Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds 275 (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle x 10%. (c) Semiconductor Components Industries, LLC, 2001 1 March, 2001 - Rev. 10 Publication Order Number: BU323AP/D II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I II I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I II I II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I II I II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 1Pulse FUNCTIONAL TESTS SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS1 OFF CHARACTERISTICS1 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Pulsed Energy Test (See Figure 12) Second Breakdown Collector Current with Base-Forward Biased Fall Time Storage Time Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz) Diode Forward Voltage (IF = 10 Adc) Base-Emitter On Voltage (IC = 10 Adc, VCE = 6 Vdc) Base-Emitter Saturation Voltage (IC = 6 Adc, IB = 120 mAdc) (IC = 10 Adc, IB = 300 mAdc) (IC = 6 Adc, IB = 120 mAdc, TC = -40_C) Collector-Emitter Saturation Voltage (IC = 3 Adc, IB = 60 mAdc) (IC = 6 Adc, IB = 120 mAdc) (IC = 10 Adc, IB = 300 mAdc (IC = 6 Adc, IB = 120 mAdc, TC = -40_C) DC Current Gain (IC = 3 Adc, VCE = 6 Vdc) (IC = 6 Adc, VCE = 6 Vdc) (IC = 10 Adc, VCE = 6 Vdc) Emitter Cutoff Current (VEB = 6 Vdc, IC = 0) Collector Cutoff Current (Rated VCBO, IE = 0) Collector Cutoff Current (Rated VCER, RBE = 100 Ohms) Collector-Emitter Sustaining Voltage (Figure 1) (IC = 3 A, RBE = 100 Ohms, L = 500 H) Unclamped Collector-Emitter Sustaining Voltage (Figure 1) L = 10 mH (IC = 200 mAdc, IB = 0, Vclamp = Rated VCEO) Test: Pulse Width = 300 s, Duty Cycle = 2%. Characteristic (VCC = 12 Vdc, IC = 6 Adc, IB1 = IB2 = 0.3 Adc) Fig. 2 http://onsemi.com BU323AP 2 VCEO(sus) VCER(sus) Symbol VCE(sat) VBE(sat) VBE(on) IC2L/2 ICBO IEBO ICER Cob IS/B hFE Vf ts tf Min 550 300 150 50 475 400 See Figure 10 Typ 165 550 350 150 5.2 7.5 2 2000 Max 350 3.5 2.5 2.2 3 2.4 1.5 1.7 2.7 2.0 15 15 40 1 1 mAdc mAdc mAdc Unit Vdc Vdc Vdc Vdc Vdc Vdc mJ pF s s BU323AP VCC = 16 Vdc 0V t1 20 ms 470 L * 47 1N4001 BC337 VCEO * Adjust t1 such that * IC reaches Required * value. VCER 100 C B TUT 1K 30 * Vclamp 1N4001 51 E IB = 0.3 Adc 100 1K 30 40 B TUT ftest = 200 Hz PULSE WIDTH = 1 ms VCC = 12 Vdc 15 Vdc 0 Vdc C 2 /20 W IC = 6 Adc UNCLAMPED CLAMPED E Figure 1. Sustaining Voltage Test Circuit Figure 2. Switching Times Test Circuit http://onsemi.com 3 BU323AP TJ = 150C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2000 1000 hFE, DC CURRENT GAIN 700 500 300 200 100 70 50 30 20 0.1 3 TJ = 25C 2.5 2 10 A 1.5 1 0.5 0.002 IC = 0.5 A 3 6 25C VCE = 3 Vdc VCE = 6 Vdc 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 7 10 0.005 0.01 0.02 0.05 0.1 0.2 IB, BASE CURRENT (AMP) 0.5 1 2 Figure 3. DC Current Gain VCE(sat) , COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(sat) , COLLECTOR-EMITTER SATURATION VOLTAGE (V) Figure 4. Collector Saturation Region 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.1 0.2 0.5 1.0 2.0 TJ = -40C IC/IB = 50 TJ = 25C 2.2 2.1 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.1 0.2 0.5 1.0 2.0 5.0 10 TJ = 25C TJ = -40C 5.0 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. Collector-Emitter Saturation Voltage Figure 6. Base-Emitter Voltage IC, COLLECTOR CURRENT ( A) 10 7 5 3 t, TIME ( s) 2 1 0.7 0.5 0.3 0.2 0.1 0.2 0.3 ts 104 103 102 101 100 75C VCE = 250 Vdc TJ = 150C IC = ICES tf TJ = 25C IC/IB = 20 VCE = 12 Vdc 25C 0.5 0.7 1 3 57 2 IC, COLLECTOR CURRENT (AMP) 10 20 FORWARD 10-1 REVERSE -0.2 0 +0.2 +0.4 +0.6 VBE, BASE-EMITTER VOLTAGE (VOLTS) +0.8 Figure 7. Turn-Off Switching Time Figure 8. Collector Cutoff Region http://onsemi.com 4 BU323AP r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 0.05 D = 0.5 0.2 0.1 RJC(t) = r(t) RJC RJC = C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 0.2 0.5 1 2 5 t, TIME (ms) 10 20 50 P(pk) 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.02 0.01 SINGLE PULSE 0.02 0.05 0.1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1000 2000 t1 Figure 9. Thermal Response IC, COLLECTOR CURRENT (AMP) 20 10 5 2 1 0.2 0.1 TC = 25C 100 s 5.0 ms 1.0 ms dc BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT 5 50 70 100 200 300 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 50 500 0.01 0.005 Figure 10. Forward Bias Safe Operating Area There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on TC = 25_C, TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 10 may be found at any case temperature by using the appropriate curve on Figure 11. TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. INDUCTIVE LOAD VCC = 16 Vdc t1 0 Vdc 50 ms 470 47 1N4001 BC337 1K 100 VZ = 350 V (BU323P) VZ = 400 V (BU323AP) at IZ = 20 mA 1N4001 E 30 B TUT 0.22 F <1 VZ 11 mH 100 POWER DERATING FACTOR (%) 80 60 40 20 0 SECOND BREAKDOWN DERATING THERMAL DERATING C 2.2 0 40 80 120 TC, CASE TEMPERATURE (C) 160 200 t1 to be selected such that IC reaches 10 Adc before switch-off. NOTE: Figure 12 specifies energy handling capabilities in an automotive ignition circuit. Figure 11. Power Derating Figure 12. Ignition Test Circuit http://onsemi.com 5 BU323AP PACKAGE DIMENSIONS CASE 340D-02 TO-218 TYPE ISSUE B C B Q E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E G H J K L Q S U V MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 U S K L 1 2 4 A 3 D V G J H STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR http://onsemi.com 6 BU323AP Notes http://onsemi.com 7 BU323AP ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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