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| 2SB1520 Silicon PNP Epitaxial High Voltage Amplifier Preliminary Features * Low saturation voltage VCE (sat) -0.3 V * Large current capacitance IC = -2 A Table 1 Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit --------------------------------------------- Collector to base voltage VCBO -80 V --------------------------------------------- Collector to emitter voltage VCEO -80 V --------------------------------------------- Emitter to base voltage VEBO -5 V --------------------------------------------- Collector current IC -2 A --------------------------------------------- Peak collector current iC(peak)* -3 A --------------------------------------------- Collector power dissipation PC** 1 W --------------------------------------------- Junction temperature Tj 150 C --------------------------------------------- Storage temperature Tstg -55 to +150 C --------------------------------------------- * PW 10 ms, duty cycle 20% ** When using the alumina ceramic board (12.5 x 20 x 0.7 mm) UPAK 3 2 1 1. Base 2. Collector 3. Emitter Table 2 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test condition ----------------------------------------------------------------------------------------------- Collector to base breakdown voltage V(BR)CBO -80 -- -- V IC = -10 A, IE = 0 ----------------------------------------------------------------------------------------------- Collector to emitter breakdown voltage V(BR)CEO -80 -- -- V IC = -1 mA, RBE = ----------------------------------------------------------------------------------------------- Emitter to base breakdown voltage V(BR)EBO -5 -- -- V IC = -10 A, IE = 0 ----------------------------------------------------------------------------------------------- Collector cutoff current ICBO -- -- -1 A VCB = -65 V, IE = 0 ----------------------------------------------------------------------------------------------- Collector cutoff current ICEO -- -- -5 A VCE = -65 V, RBE = ----------------------------------------------------------------------------------------------- Emitter cutoff current IEBO -- -- -1 A VEB = -4 V, IC = 0 ----------------------------------------------------------------------------------------------- DC current transfer ratio hFE1 120 -- 300 -- VCE = -2 V, IC = -0.5 A* ----------------------------------------------------------------------------------------------- DC current transfer ratio hFE2 40 -- -- -- VCE = -2 V, IC = -1.5 A* ----------------------------------------------------------------------------------------------- |
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