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1SS355 Diodes Switching diode 1SS355 Applications High speed switching External dimensions (Units : mm) 2.50.2 1.70.1 Features 1) Small surface mounting type.(UMD2) 2) High Speed.(trr=1.2ns Typ.) 3) High reliability with high surge current handling capability. CATHODE MARK A +0.1 -0.05 Construction Silicon epitaxial planar 1.250.1 0.1 0.30.05 +0.2 0.7 -0.1 ROHM : UMD2 EIAJ : SC-76 JEDEC : SOD-323 Absolute maximum ratings (Ta=25C) Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1s) Junction temperature Storage temperature Symbol VRM VR IFM IO Isurge Tj Tstg Limits 90 80 225 100 500 125 -55~+125 Unit V V mA mA mA C C Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR CT trr Min. - - - - Typ. - - - - Max. 1.2 0.1 3.0 4 Unit V A pF ns IF=100mA VR=80V Conditons VR=0.5V, f=1MHz VR=6V, IF=10mA, RL=100 1SS355 Diodes Electrical characteristic curves (Ta=25C) CAPACITANCE BETWEEN TERMINALS : CT (pF) 1 1m 0.1m 10 1 100n Ta=25C 10n 1n 0 Ta=125C 10 5 FORWARD CURRENT : IF (A) 100m 10m Ta=125C 75C 25C -25C REVERSE CURRENT : IR (A) 2 1 0.5 Ta=75C 1m 100 0.2 0.1 0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 20 40 60 80 100 120 2 4 6 8 10 12 14 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics 3 REVERSE RECOVERY TIME : trr (ns) 100 SURGE CURRENT : Isurge (A) VR=6V Irr=1/10IR 50 PULSE Single pulse 2 20 10 5 1 2 1 0.1 0 0 10 20 30 1 10 100 1000 10000 FORWARD CURRENT : IF (mA) PULSE WIDTH : TW (ms) Fig.4 Reverse recovery time characteristics Fig.5 Surge current characteristics 0.01F D.U.T. 5k PULSE GENERATOR OUTPUT 50 50 SAMPLING OSCILLOSCOPE Fig.6 Reverse recovery time (trr) measurement circuit |
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