Part Number Hot Search : 
MSK642B ZX85C4 07005 PFZ180A SP1674BK UF5004 DBXXXXXX TSM102ID
Product Description
Full Text Search
 

To Download TSOP12SA1 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 VISHAY
TSOP12..SA1
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP12..SA1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. TSOP12..SA1 is the standard IR remote control receiver series, supporting all major transmission codes.
13 645
Features
* Photo detector and preamplifier in one package * Internal filter for PCM frequency * Improved shielding against electrical field disturbance * TTL and CMOS compatibility * Output active low * Low power consumption
Parts Table
Part TSOP1230SA1 TSOP1233SA1 TSOP1236SA1 TSOP1237SA1 TSOP1238SA1 TSOP1240SA1 TSOP1256SA1 30 kHz 33 kHz 36 kHz 36.7 kHz 38 kHz 40 kHz 56 kHz Carrier Frequency
Special Features
* Improved immunity against ambient light * Suitable burst length 10 cycles/burst
Application Circuit
Transmitter TSOPxxxx with TSALxxxx
Circuit
Block Diagram
R1 = 100 VS C1 = 4.7 F VO +VS
2 30 k Input PIN AGC Band Pass Demodulator
VS
3
OUT
OUT GND
C
GND
1 Control Circuit
GND
R1 + C1 recommended to suppress power supply disturbances. The output voltage should not be hold continuously at a voltage below VO = 3.3 V by the external circuit.
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Supply Voltage (Pin 2) Test condition Symbol VS Value - 0.3 to + 6.0 Unit V
Document Number 82017 Rev. 9, 15-Oct-2002
www.vishay.com 1
TSOP12..SA1
Vishay Semiconductors
Parameter Supply Current Output Voltage Output Current Junction Temperature Storage Temperature Range Operating Temperature Range Power Consumption Soldering Temperature (Tamb 85 C) t 10 s, 1 mm from case (Pin 2) (Pin 3) (Pin 3) Test condition Symbol IS VO IO Tj Tstg Tamb Ptot Tsd Value 5
VISHAY
Unit mA V mA C C C mW C
- 0.3 to + 6.0 5 100 - 25 to + 85 - 25 to + 85 50 260
Electrical and Optical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Supply Current (Pin 2) Supply Voltage (Pin 2) Transmission Distance Output Voltage Low (Pin 3) Irradiance (30 - 40 kHz) Irradiance (56 kHz) Irradiance Directivity Ev = 0, test signal see fig.1, IR diode TSAL6200, IF = 400 mA IOSL = 0.5 mA, Ee = 0.7 mW/m2, f = fo, test signal see fig. 1 Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.1 Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.1 tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 Angle of half transmission distance Test condition VS = 5 V, Ev = 0 VS = 5 V, Ev = 40 klx, sunlight Symbol ISD ISH VS d VOSL Ee min Ee min Ee max 1/2 30 45 0.35 0.4 4.5 35 250 0.5 0.6 Min 0.8 Typ. 1.2 1.5 5.5 Max 1.5 Unit mA mA V m mV
mW/m2 mW/m2 W/m2 deg
Typical Characteristics (Tamb = 25C unless otherwise specified)
Ee Optical Test Signal
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms)
1.0
t po - Output Pulse Width ( ms )
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.1 1.0
Output Pulse
t tpi * T * tpi w 10/fo is recommended for optimal function VO VOH VOL td1 ) Output Signal
1) 2)
16110
Input Burst Duration
7/f0 < td < 15/f0 tpi-5/f0 < tpo < tpi+6/f0 tpo2 ) t
l = 950 nm, optical test signal, fig.1
10.0
100.0 1000.010000.0
16908
Ee - Irradiance ( mW/m2 )
Figure 1. Output Function
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Document Number 82017 Rev. 9, 15-Oct-2002
www.vishay.com 2
VISHAY
TSOP12..SA1
Vishay Semiconductors
Ee
Optical Test Signal
Ee min- Threshold Irradiance ( mW/m 2 )
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.01 Ambient, l = 950 nm
Correlation with ambient light sources: 10W/m2^1.4klx (Std.illum.A,T=2855K) 10W/m2^8.2klx (Daylight,T=5900K)
600 ms T = 60 ms Output Signal, ( see Fig.4 )
600 ms
t
94 8134
VO VOH VOL
Ton
Toff
t
16911
0.10
1.00
10.00
100.00
E - Ambient DC Irradiance (W/m2)
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.1 1.0 l = 950 nm, optical test signal, fig.3 Toff Ton
Ee min- Threshold Irradiance ( mW/m 2 )
Ton ,Toff - Output Pulse Width ( ms )
1.0
2.0 f = fo f = 10 kHz 1.0
1.5
f = 1 kHz
0.5 f = 100 Hz 0.0 0.1 1.0 10.0 100.0 1000.0
10.0
100.0 1000.010000.0
16912
16909
Ee - Irradiance ( mW/m2 )
DVsRMS - AC Voltage on DC Supply Voltage (mV)
Figure 4. Output Pulse Diagram
Figure 7. Sensitivity vs. Supply Voltage Disturbances
E e min- Threshold Irradiance ( mW/m 2 )
1.2
E e min / E e - Rel. Responsivity
2.0 f(E) = f0 1.6 1.2 0.8 0.4 0.0 0.0 0.4 0.8 1.2 1.6 2.0 E - Field Strength of Disturbance ( kV/m )
1.0 0.8 0.6 0.4 0.2 0.0 0.7 f = f0"5% Df ( 3dB ) = f0/10 0.9 1.1 1.3
16925
f/f0 - Relative Frequency
94 8147
Figure 5. Frequency Dependence of Responsivity
Figure 8. Sensitivity vs. Electric Field Disturbances
Document Number 82017 Rev. 9, 15-Oct-2002
www.vishay.com 3
TSOP12..SA1
Vishay Semiconductors
VISHAY
0.8 0.7
Max. Envelope Duty Cycle
0
10
20 30
0.6 40 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120
95 11340p2
1.0 0.9 0.8 f = 38 kHz, Ee = 2 mW/m2 0.7 50 60 70 80 0.6 0.6 0.4 0.2 0 0.2 0.4 drel - Relative Transmission Distance
16913
Burst Length ( number of cycles / burst )
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Horizontal Directivity x
Ee min- Threshold Irradiance ( mW/m 2 )
0.6 0.5 0.4 1.0 0.3 0.2 0.1 0.0 -30 -15 0.9 0.8 0.7 Sensitivity in dark ambient
0
10
20 30
40 50 60 70 80 0 15 30 45 60 75 90
95 11339p2
0.6
16918
Tamb - Ambient Temperature ( C )
0.6 0.4 0.2 0 0.2 0.4 drel - Relative Transmission Distance
Figure 10. Sensitivity vs. Ambient Temperature
Figure 13. Vertical Directivity y
S ( l ) rel - Relative Spectral Sensitivity
1.2 1.0 0.8 0.6 0.4 0.2 0 750
Suitable Data Format
The circuit of the TSOP12..SA1 is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided. A bandpassfilter, an integrator stage and an automatic gain control are used to suppress such disturbances. The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length and duty cycle. The data signal should fulfill the following conditions: * Carrier frequency should be close to center frequency of the bandpass (e.g. 38 kHz). * Burst length should be 10 cycles/burst or longer. * After each burst which is between 10 cycles and 70 cycles a gap time of at least 14 cycles is necessary. * For each burst which is longer than 1.8 ms a corresponding gap time is necessary at some time in the
850
950
1050
1150
94 8408
l - Wavelength ( nm )
Figure 11. Relative Spectral Sensitivity vs. Wavelength
Document Number 82017 Rev. 9, 15-Oct-2002
www.vishay.com 4
VISHAY
data stream. This gap time should be at least 4 times longer than the burst. * Up to 800 short bursts per second can be received continuously. Some examples for suitable data format are: NEC Code (repetitive pulse), NEC Code (repetitive data), Toshiba Micom Format, Sharp Code, RC5 Code, RC6 Code, R-2000 Code, Sony Code. When a disturbance signal is applied to the TSOP12..SA1 it can still receive the data signal. However the sensitivity is reduced to that level that no unexpected pulses will occure. Some examples for such disturbance signals which are suppressed by the TSOP12..SA1 are: * DC light (e.g. from tungsten bulb or sunlight) * Continuous signal at 38 kHz or at any other frequency * Signals from fluorescent lamps with electronic ballast with high or low modulation (see Figure 14 or Figure 15).
TSOP12..SA1
Vishay Semiconductors
IR Signal from fluorescent lamp with high modulation
IR Signal
0
16921
5
10 Time ( ms )
15
20
Figure 15. IR Signal from Fluorescent Lamp with high Modulation
IR Signal
IR Signal from fluorescent lamp with low modulation
0
16920
5
10 Time ( ms )
15
20
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
Document Number 82017 Rev. 9, 15-Oct-2002
www.vishay.com 5
TSOP12..SA1
Vishay Semiconductors Package Dimensions in mm
VISHAY
12829
Document Number 82017 Rev. 9, 15-Oct-2002
www.vishay.com 6
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
TSOP12..SA1
Vishay Semiconductors
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 82017 Rev. 9, 15-Oct-2002
www.vishay.com 7


▲Up To Search▲   

 
Price & Availability of TSOP12SA1

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X