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| www..com STP200NF04L STB200NF04L - STB200NF04L-1 N-CHANNEL 40V - 3 m - 120 A TO-220/DPAK/IPAK STripFETTM II MOSFET Table 1: General Features TYPE STB200NF04L STP200NF04L STB200NF04L-1 s s s Figure 1: Package RDS(on) 3.5 m 3.8 m 3.8 m ID 120 A 120 A 120 A 3 1 2 VDSS 40 V 40 V 40 V TYPICAL RDS(on) = 3m 100% AVALANCHE TESTED LOW THERESHOLD DRIVE 3 1 TO-220 DPAK DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and lesscritical alignement steps therefore a remarkable manufacturing reproducibility. This new improved device has been specifically designed for Automotive applications. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED 3 12 IPAK Figure 2: Internal Schematic Diagram Table 2: Order Codes PART NUMBER STP200NF04L STB200NF04L STB200NF04L-1 MARKING P200NF04L B200NF04L B200NF04L PACKAGE TO-220 DPAK IPAK PACKAGING TUBE TAPE & REEL TUBE Rev. 1 April 2005 1/12 STP200NF04L - STB200NF04L - STB200NF04L-1 Table 3: Absolute Maximum ratings Symbol VDS VGDR VGS ID (**) ID IDM (2) PTOT dv/dt (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS=20 K) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 40 40 16 120 120 480 300 2 3.6 1.4 -55 to 175 Unit V V V A A A W W/C V/ns J C EAS (3) Tstg Tj (1)ISD 100 A, di/dt 240 A/s, VDD 32 , Tj TJMAX (2) Pulse width limited by safe operating area. (3) Starting Tj = 25C, IAR = 50A, VDD = 30V (**) Current limited by Package Table 4: Thermal Data TO-220/IPAK Rthj-case Rthj-pcb (*) Rthja Tl Thermal Resistance Junction-case Thermal Resistance Junction-pcb Thermal Resistance Junction-ambient Max Max Max 62.5 300 0.50 35 --C DPAK Unit C/W C/W Maximum Lead Temperature For Soldering Purpose (*)When mounted on 1 inch FR4 2oZ Cu ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Test Conditions ID = 250 A, VGS = 0 Min. 40 1 10 100 1 TO-220 IPAK DPAK 3.3 3.8 3.0 3.5 4 3.8 4.6 3.5 4.3 Typ. Max. Unit V A A nA V m m m m VDS= Max Rating Zero Gate Voltage Drain Current (VGS = 0) VD = Max Rating, TC= 125 C Gate-body Leakage Current (VDS = 0) Static Drain-source On Resistance VGS = 16V Gate Threshold Voltage VDS = VGS, ID = 250A VGS = 10 V, ID = 50 A VGS = 5 V, ID = 50 A VGS = 10 V, ID = 50 A VGS = 5 V, ID = 50 A 2/12 STP200NF04L - STB200NF04L - STB200NF04L-1 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic Symbol gfs (4) Ciss Coss Crss td(on) tr td(off) tf tf(Voff) tf tc Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-off Delay Time Fall Time Cross-over Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V, ID = 20 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 60 6400 1300 190 37 270 90 80 85 125 160 72 20 28.5 90 Max. Unit S pF pF pF ns ns ns ns ns ns ns nC nC nC VDD = 20 V, ID = 50 A, RG= 4.7 VGS = 4.5 V (see Figure 16) Vclamp = 32 V, ID = 100 A, RG= 4.7 VGS = 4.5 V (see Figure 17) VDD = 32 V, ID = 100 A, VGS = 4.5 V (see Figure 19) Table 7: Source Drain Diode Symbol ISD ISDM (1) VSD (4) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 160 A, VGS = 0 ISD = 100 A, di/dt = 100 A/s, VDD = 20 V, Tj = 150C (see Figure 16) 88 240 5.5 Test Conditions Min. Typ. Max. 100 400 1.3 Unit A A V ns nC A (1) Pulse width limited by safe operating area (4). Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 3/12 STP200NF04L - STB200NF04L - STB200NF04L-1 Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/12 STP200NF04L - STB200NF04L - STB200NF04L-1 Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Normalized On Resistance vs Temperature Figure 11: Source-Drain Diode Forward Characteristics Figure 14: Normalized Breakdown Voltage vs Temperature 5/12 STP200NF04L - STB200NF04L - STB200NF04L-1 Figure 15: Unclamped Inductive Load Test Circuit Figure 18: Unclamped Inductive Wafeform Figure 16: Switching Times Test Circuit For Resistive Load Figure 19: Gate Charge Test Circuit Figure 17: Test Circuit For Inductive Load Switching and Diode Recovery Times 6/12 STP200NF04L - STB200NF04L - STB200NF04L-1 TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 7/12 STP200NF04L - STB200NF04L - STB200NF04L-1 TO-262 (I2PAK) MECHANICAL DATA mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch 8/12 STP200NF04L - STB200NF04L - STB200NF04L-1 D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 9/12 STP200NF04L - STB200NF04L - STB200NF04L-1 D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 10/12 STP200NF04L - STB200NF04L - STB200NF04L-1 Table 8: Revision History Date 11/Apr/2005 Revision 1 First Release. Description of Changes 11/12 STP200NF04L - STB200NF04L - STB200NF04L-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 |
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