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Preliminary Technical Information
PolarTM Power MOSFET HiperFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK170N20P IXFX170N20P
VDSS ID25
RDS(on)
= =
200V 170A 14m
TO-264 (IXFK)
G
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C Leads Current Limit, RMS TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 175C TC = 25C
Maximum Ratings 200 200 20 30 170 75 400 85 4 20 1250 -55 ... +175 175 -55 ... +175 V V V V A A A A J V/ns W C C C C C N/lb. Nm/lb.in. g g Features
G = Gate S = Source
D
S
(TAB)
PLUS247 (IXFX)
(TAB) D = Drain TAB = Drain
1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting force Mounting torque PLUS247 TO-264 (PLUS247) (TO-264)
300 260 20..120/4.5..27 1.13/10 6 10
* Fast intrinsic diode * Avalanche Rated * Low RDS(ON) and QG * Low package inductance Advantages * Low gate charge results in simple drive requirement * High power density Applications * DC-DC coverters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC and DC motor control * Uninterrupted power supplies * High speed power switching applications
Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = 20V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 0.5 * ID25, Note 1 TJ = 150C
Characteristic Values Min. Typ. Max. 200 3.0 5.0 V V
200 nA 50 A 1 mA 14 m
(c) 2008 IXYS CORPORATION, All rights reserved
DS100008(7/08)
IXFK170N20P IXFX170N20P
Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.15 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 45 75 11.4 2440 70 40 25 50 14 185 80 60 S nF pF pF ns ns ns ns nC nC nC 0.12 C/W C/W TO-264 (IXFK) Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C, unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = 85A, VGS = 0V, Note 1 IF = 85A, -di/dt = 150A/s VR = 100V, VGS = 0V 1.6 20 Characteristic Values Min. Typ. Max. 170 510 1.3 A A V PLUS 247TM (IXFX) Outline
200 ns C A
Note 1: Pulse test, t 300s; duty cycle, d 2%.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFK170N20P IXFX170N20P
Fig. 1. Output Characteristics @ 25C
180 160 140 VGS = 15V 10V 9V 300 270 240 210 8V 100 80 60 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 6V 7V VGS = 15V 10V 9V
Fig. 2. Extended Output Characteristics @ 25C
ID - Amperes
ID - Amperes
120
180 150 120 90 60 30 0 0 2 4
8V
7V
6V
6
8
10
12
14
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 150C
180 160 140 VGS = 15V 10V 9V 8V 3.4 3.0
Fig. 4. RDS(on) Normalized to ID = 85A Value vs. Junction Temperature
VGS = 10V
ID - Amperes
120 100 80 60
RDS(on) - Normalized
2.6 2.2 1.8 1.4 1.0 0.6 0.2 I D = 170A I D = 85A
7V
6V 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 5V
-50
-25
0
25
50
75
100
125
150
175
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 85A Value vs. Drain Current
3.8 3.4 VGS = 10V 15V - - - TJ = 175C 70 60 50 40 30 1.4 1.0 TJ = 25C 0.6 0 25 50 75 100 125 150 175 200 225 250 275 20 10 0 -50 90 80
Fig. 6. Maximum Drain Current vs. Case Temperature
External Lead Current Limit
RDS(on) - Normalized
3.0 2.6 2.2 1.8
ID - Amperes
-25
0
25
50
75
100
125
150
175
ID - Amperes
TC - Degrees Centigrade
(c) 2008 IXYS CORPORATION, All rights reserved
IXFK170N20P IXFX170N20P
Fig. 7. Input Admittance
180 160 140 TJ = 150C 25C - 40C 140 TJ = - 40C 120 100
Fig. 8. Transconductance
g f s - Siemens
ID - Amperes
120 100 80 60
25C 150C
80 60 40
40 20 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 20 0 0 20 40 60 80 100 120 140 160 180
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
350 300 8 250 7 10 9 VDS = 100V I D = 85A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
VGS - Volts
TJ = 150C TJ = 25C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
200 150 100 50
6 5 4 3 2 1
0
0 0 20 40 60 80 100 120 140 160 180 200
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000 Ciss 1,000.0
Fig. 12. Forward-Bias Safe Operating Area
RDS(on) Limit
Capacitance - PicoFarads
10,000
100.0
25s 100s
1,000
Coss
ID - Amperes
10.0
1ms
100 Crss
1.0
TJ = 175C TC = 25C Single Pulse
10ms 100ms DC
f = 1 MHz
10 0 5 10 15 20 25
0.1 30 35 40 10 100 1000
VDS - Volts
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK170N20P IXFX170N20P
Fig. 13. Maximum Transient Thermal Impedance
1.000
Z (th)JC - C / W
0.100
0.010
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_170N20P(93)7-16-08

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