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VISHAY
BY448.BY458
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
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Features
* Glass passivated junction * Hermetically sealed package
Applications
High voltage rectification diode Efficiency diode in horizontal deflection circuits
Mechanical Data
Case: Sintered glass case, SOD 57 Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 370 mg, (max. 500 mg)
949539
Parts Table
Part BY448 BY458 Type differentiation VR = 1500 V; IFAV = 2 A VR = 1200 V; IFAV = 2 A SOD57 SOD57 Package
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Reverse voltage Test condition see electrical characteristics see electrical characteristics Peak forward surge current Average forward current Junction temperature Storage temperature range Non repetitive reverse avalanche energy I(BR)R = 0.4 A tp = 10 ms, half sinewave Sub type BY448 BY458 Symbol VR = VRRM VR = VRRM IFSM IFAV Tj Tstg ER Value 1500 1200 30 2 140 - 55 to + 175 10 Unit V V A A C C mJ
Maximum Thermal Resistance
Tamb = 25 C, unless otherwise specified Parameter Junction ambient Test condition l = 10 mm, TL = constant on PC board with spacing 25 mm Sub type Symbol RthJA RthJA Value 45 100 Unit K/W K/W
Document Number 86006 Rev. 5, 07-Jan-03
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BY448.BY458
Vishay Semiconductors Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current Total reverse recovery time Reverse recovery time IF = 3 A VR = VRRM VR = VRRM, Tj = 140 C IF = 1 A, - diF/dt = 0.05 A/s IF = 0.5 A, IR = 1 A, iR = 0,25 A Test condition Sub type Symbol VF IR IR trr trr Min Typ.
VISHAY
Max 1.6 3 140 20 2
Unit V A A s s
Typical Characteristics (Tamb = 25 C unless otherwise specified)
R thJA - Therm. Resist. Junction / Ambient ( K/W )
120 l 100 80 60 40 20 0 0 5 10 15 20 25 30
16418
l
I FAV - Average Forward Current ( A )
2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 VR=VRRM half sinewave RthJA=45K/W l=10mm
TL=constant
RthJA=100K/W PCB: d=25mm
94 9101
l - Lead Length ( mm )
Tamb - Ambient Temperature ( C )
Figure 1. Typ. Thermal Resistance vs. Lead Length
Figure 3. Max. Average Forward Current vs. Ambient Temperature
100.000
IR - Reverse Current ( mA )
1000 VR = VRRM Tj=150C
I F - Forward Current ( A)
10.000 1.000 0.100 0.010 0.001
100
Tj=25C
10
1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 25
16419
50
75
100
125
150
16417
VF - Forward Voltage ( V )
Tj - Junction Temperature ( C )
Figure 2. Forward Current vs. Forward Voltage
Figure 4. Reverse Current vs. Junction Temperature
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Document Number 86006 Rev. 5, 07-Jan-03
VISHAY
BY448.BY458
Vishay Semiconductors
PR - Reverse Power Dissipation ( mW )
400
CD - Diode Capacitance ( pF )
35 VR = VRRM 30 25 20 15 10 5 0 25 50 75 100 125 Tj - Junction Temperature ( C ) 150
16421
350 300 250 200 150 100 50 0 PR-Limit @80%VR
f=1MHz
PR-Limit @100%VR
0.1
16420
1.0 10.0 VR - Reverse Voltage ( V )
100.0
Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm
3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5g Cathode Identification
technical drawings according to DIN specifications 94 9538
0.82 max.
26 min.
4.2 max.
26 min.
Document Number 86006 Rev. 5, 07-Jan-03
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BY448.BY458
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 86006 Rev. 5, 07-Jan-03

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