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| www..com Opto-Switch Transmissive Phototransistor output. Long lead version of EE-SX1025 Longer leads allow the sensor to be mounted to a 1.6-mm thick board. 5.4-mm-tall compact model. PCB mounting type. High resolution with a 0.5-mm-wide aperture. EE-SX1055 Dimensions 0.2 max. 0.2 max. Internal Circuit K C Four, 5 White band Optical axis 0.50.05 A E Terminal No. A K C E Name Anode Cathode Collector Emitter Unless otherwise specified, the tolerances are as shown below. Dimensions Tolerance 0.3 0.375 0.45 0.55 0.65 0.8 0.95 1.1 5.40.2 3.60.5 Four, 0.5 Four, 0.25 Cross section AA 3 mm max. 3 t mm v 6 6 t mm v 10 10 t mm v 18 18 t mm v 30 30 t mm v 50 50 t mm v 80 80 t mm v 100 Specifications Absolute Maximum Ratings (Ta = 25C) Item Emitter Forward current Pulse forward current Reverse voltage Detector Collector-Emitter voltage Emitter-Collector voltage Collector current Collector dissipation Ambient temperature Operating Storage Soldering Note: IF IFP VR VCEO VECO IC PC Topr Tstg Tsol Symbol Rated value 50 mA (see note 1) 1 A (see note 2) 4V 30 V --20 mA 100 mW (see note 1) -25C to 85C -30C to 100C 260C 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 s maximum with a frequency of 100 Hz. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Forward voltage Reverse current Peak emission wavelength Detector Light current Dark current Leakage current Collector-Emitter saturated voltage Peak spectral sensitivity wavelength Rising time Falling time Symbol VF IR P IL ID ILEAK VCE (sat) P tr tf Value 1.2 V typ., 1.5 V max. 0.01 A typ., 10 A max. 940 nm typ. 0.5 mA min., 14 mA max. 2 nA typ., 200 nA max. --0.1 V typ., 0.4 V max. 850 nm typ. 4 s typ. 4 s typ. IF = 30 mA VR = 4 V IF = 20 mA IF = 20 mA, VCE = 10 V VCE = 10 V, 0 x --IF = 20 mA, IL = 0.1 mA VCE = 10 V VCC = 5 V, RL = 100 , IL = 5 mA VCC = 5 V, RL = 100 , IL = 5 mA Condition Engineering Data Forward Current vs. Collector Dissipation Temperature Rating Collector dissipation Pc (mW) IF Forward Current vs. Forward Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Ta = 25C VCE = 10 V Forward current I F (mA) Forward current I F (mA) Ta = -30C Ta = 25C Ta = 70C PC Ambient temperature Ta (C) Forward voltage VF (V) Light current I L (mA) Forward current IF (mA) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Ta = 25C Relative Light Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0x Relative light current I L (%) Light current I L (mA) IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Dark current I D (nA) Collector-Emitter voltage VCE (V) Ambient temperature Ta (C) Ambient temperature Ta (C) Response Time vs. Load Resistance Characteristics (Typical) Vcc = 5 V Ta = 25C Sensing Position Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) Response Time Measurement Circuit Input 90 % 10 % Relative light current I L (%) Response time tr, tf ( s) Output Input Output Load resistance RL (k) Distance d (mm) |
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