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| CMLM0708A MULTI DISCRETE MODULE TM SURFACE MOUNT N-CHANNEL AND P-CHANNEL COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0708A is a Multi Discrete ModuleTM consisting of complementary N-Channel and P-Channel Enhancement-mode MOSFETS packaged in a space saving PICOminiTM SOT-563 case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. MARKING CODE: C78 SOT-563 CASE FEATURES: * Dual Complementary MOSFETS * Low rDS(ON) (3 MAX @ VGS=5.0V) * Small SOT-563 Surface Mount Package MAXIMUM RATINGS - CASE: (TA=25C) Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS: (TA=25C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current SYMBOL VDS VDG VGS ID IS IDM ISM APPLICATIONS: * Switching Circuits * DC/DC Converters * Battery Powered Portable Equipment including Cell Phones, Digital Cameras, Pagers, PDAs, Notebook PCs, etc. SYMBOL PD PD PD TJ, Tstg JA N-Ch (Q1) 60 60 40 280 280 1.5 1.5 UNITS mW mW mW C C/W UNITS V V V mA mA A A 350 300 150 -65 to +150 357 P-Ch (Q2) 50 50 20 280 280 1.5 1.5 ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) N-Ch (Q1) SYMBOL TEST CONDITIONS MIN MAX IGSSF, IGSSR VGS=20V, VDS=0 100 IDSS (N-Ch) VDS=60V, VGS=0 1.0 IDSS (P-Ch) VDS=50V, VGS=0 IDSS (N-Ch) VDS=60V, VGS=0, TJ=125C 500 IDSS (P-Ch) VDS=50V, VGS=0, TJ=125C ID(ON) (N-Ch) VGS=10V, VDS=10V 500 ID(ON) (P-Ch) VGS=10V, VDS=10V BVDSS VGS=0, ID=10A 60 Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 P-Ch MIN 500 50 (Q2) MAX 100 1.0 500 - UNITS nA A A A A mA mA V R1 (18-January 2010) CMLM0708A MULTI DISCRETE MODULE TM SURFACE MOUNT N-CHANNEL AND P-CHANNEL COMPLEMENTARY MOSFETS ELECTRICAL CHARACTERISTICS - Continued: SYMBOL TEST CONDITIONS VGS(th) VDS=VGS, ID=250A VDS(ON) VGS=10V, ID=500mA VDS(ON) VSD (N-Ch) VSD (P-Ch) rDS(ON) rDS(ON) rDS(ON) rDS(ON) gFS (N-Ch) gFS (P-Ch) Crss Ciss Coss ton / toff VGS=5.0V, ID=50mA VGS=0, IS=400mA VGS=0, IS=115mA VGS=10V, ID=500mA VGS=10V, ID=500mA, TJ=125C VGS=5.0V, ID=50mA VGS=5.0V, ID=50mA, TJ=125C VDS=10V, ID=200mA VDS=10V, ID=200mA VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDD=30V, VGS=10V, ID=200mA RG=25, RL=150 N-Ch (Q1) MIN MAX 1.0 2.5 80 1.0 0.15 1.2 2.0 3.5 3.0 5.0 5.0 50 25 20 P-Ch (Q2) MIN MAX 1.0 2.5 200 1.5 0.15 1.3 2.5 4.0 3.0 5.0 7.0 70 15 20 UNITS V V V V V mS mS pF pF pF ns SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate Q1 2) Source Q1 3) Drain Q2 4) Gate Q2 5) Source Q2 6) Drain Q1 MARKING CODE: C78 R1 (18-January 2010) w w w. c e n t r a l s e m i . c o m |
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