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 Type
BSC900N20NS3 G
$(*'#$%TM3 Power-Transistor
Features 9 /2* * &% ' % $ % $ $ .- 4&0 * , 7 .0 1.9 $ )" - - &+ - .0 " ++ , &4&+ 9 6 &+&- 2 (" 2& $ )" 0 6 R DS(on) product (FOM) $+ (& 9 .5 .- 0 * 2" - $ & R DS(on) &11
Product Summary VDS RDS(on),max ID 200 90 15.2 V m# A
PG-TDSON-8 9
8 ./&0 2* ( 2&, /&0 230 ""& 9 # ' && + % /+ 2* ( . 0 &" "$ ., /+" - 2 *
1)
9 3" +'&% " $ $ .0 * ( 2. ** %-
for target application
9 " + .(&- ' && " $ $ .0 * ( 2. 0 %-
Type BSC900N20NS3 G
Package PG-TDSON-8
Marking 900N20NS
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
1) 2)
Value 15.2 10.7 61 100 20
Unit A
I D,pulse E AS V GS P tot T j, T stg
T C=25 C I D=7.6 A, R GS=25 #
mJ V W C
T C=25 C
62.5 -55 ... 150 55/150/56
J-STD20 and JESD22 see figure 3
Rev. 2.1
page 1
2010-09-01
BSC900N20NS3 G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA 6 cm2 cooling area3) 2 50 K/W Values typ. max. Unit
Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=30 A V DS=160 V, V GS=0 V, T j=25 C V DS=160 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=7.6 A V GS=20 V, V DS=0 V V GS=10 V, I D=7.6 A 200 2 3 0.1 4 1 A V
8
10 1 77 2.2 16
100 100 90 nA m# # S
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air.
Rev. 2.1
page 2
2010-09-01
BSC900N20NS3 G
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics4) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge
4)
Values typ. max.
Unit
C iss C oss C rss t d(on) tr t d(off) tf V DD=100 V, V GS=10 V, I D=7.6 A, R G=1.6 # V GS=0 V, V DS=100 V, f =1 MHz
-
690 52 5.2 5 4 10 3
920 69 -
pF
ns
Q gs Q gd Q sw Qg V plateau Q oss V DD=100 V, V GS=0 V V DD=100 V, I D=7.6 A, V GS=0 to 10 V
-
3.1 1.3 2.4 9 4.5 20
11.6 26
nC
V nC
IS I S,pulse V SD t rr Q rr
T C=25 C V GS=0 V, I F=15.2 A, T j=25 C V R=100 V, I F=I S, di F/dt =100 A/s -
1 86 309
15.2 61 1.2 -
A
V ns nC
See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2010-09-01
BSC900N20NS3 G
1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS:
!
70
16
60
14
12 50 10
Ptot [W]
40
ID [A]
30 20 10 0 0 40 80 120 160
8
6
4
2
0 0 40 80 120 160
TC [&C]
TC [&C]
3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p
102
1 s
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
101
10 s
101
ID [A]
1 ms
ZthJC [K/W]
100 s
0.5
100
100
10 ms
0.2
0.1 DC 0.05 0.02 0.01 single pulse
10-1 10-1 100 101 102 103
10-1 10-5 10-4 10-3 10-2 10-1 100
VDS [V]
tp [s]
Rev. 2.1
page 4
2010-09-01
BSC900N20NS3 G
5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS
30
10 V
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS
160
25
7V 6V
120 20
5.5 V 5V
RDS(on) [m ]
5.5 V 6V 8V
ID [A]
5V
15
80
10 V
10 40
4.5 V
5
0 0 1 2 3 4 5
0 0 4 8 12 16
VDS [V]
ID [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
40
8 Typ. forward transconductance g fs=f(I D); T j=25 C
32
35
28
30
24
25
20
20
gfs [S]
150 C 25 C
ID [A]
16
15
12
10
8
5
4
0 0 2 4 6 8
0 0 5 10 15 20 25 30
VGS [V]
ID [A]
Rev. 2.1
page 5
2010-09-01
BSC900N20NS3 G
9 Drain-source on-state resistance R DS(on)=f(T j); I D=7.6 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D
250 4
3.5 200 3
30 A 300 A
RDS(on) [m ]
150
2.5
VGS(th) [V]
typ
2
98 %
100
1.5
1 50 0.5 0 -60 -20 20 60 100 140 180
0 -60 -20 20 60 100 140 180
Tj [&C]
Tj [&C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
103
Ciss
100
Coss 25 C
102
10
150 C, 98%
C [pF]
IF [A]
150 C
25 C, 98%
101
Crss
1
100 0 40 80 120 160
0.1 0 0.5 1 1.5 2
VDS [V]
VSD [V]
Rev. 2.1
page 6
2010-09-01
BSC900N20NS3 G
13 Avalanche characteristics I AS=f(t AV); R GS=25 # parameter: T j(start) 14 Typ. gate charge V GS=f(Q gate); I D=7.6 A pulsed parameter: V DD
10
160 V
8
100 V
6
VGS [V]
40 V
4
2
0 0 1 2 3 4 5 6 7 8 9
Qgate [nC]
15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
230
220
VBR(DSS) [V]
210
200
190
180 -60 -20 20 60 100 140 180
Tj [&C]
BSC900N20NS3 G
Package Outline:PG-TDSON-8
Rev. 2.1
page 8
2010-09-01
BSC900N20NS3 G
' $ (,%-0 2 & (4$ , (, 2 (1 # -" 3 + $ ,2 * (, ,- $ 4$ ,2 $ 0 & 0 $ # + (-, ' 1' * !$ # 4 * $ 1 12 2 # ' $ 0 (, ,# -0 ,7 (,%-0 2 0 & 0 (,& 2 $ 3 $ $ + (-, $ # ' ,%(,$ -, $ " ' ,-* ($ 1 ' $ 0 ! 7 # (1" * (+ 1 ,7 ,# -& $ -% ,7 2 (0 . 07 '# 2
1
& 3 0 ,2 $ -% $
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(," * # (,& 5(2 -3 2(+ (2 2 5 0 ,2 1 -% ,-,
(,%0 $ + $ ,2 (,2 *$ " 2 *.0 07 0 ' 2 3 ' * (-, 0 ($ (,& -% $ * 3 -.$ 2 (& 1
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3 $ 2 2 " ' ,(" *0 /3 (0 + $ ,2 " -+ .-,$ ,2 + 7 " -,2 (, # ,& $ 0 1 13 ! 12 ," $ 1 -0(,%-0 2 -$ $ $ 1 1 -3 + (-, -, 2 $ 2 1 (, /3 $ 12 .* 1$ " -,2 " 2 ' $ ,$ 0 12 ' 7.$ (-, $ 2 $ ,%(,$ -, $ " ' ,-* ($ 1 %%(" $ -& ,%(,$ -, $ " ' ,-* ($ 1 " -+ .-,$ ,2 + 7 ! $ 3 1$ # (, *
13 ..-0 # $ 4(" $ 1 -01712 + 1 -,* 5(2 -& 1 (%$ 2 $ 7' 2 $ $ 6 $ 11 50 2 , ..0 *-% ,%(,$ -, $ " ' ,-* ($ 1 (% ' .0 (2 $ -4 -& % (* 0 -% 13 " ' " -+ .-,$ ,2 " , 3$ 1 0 1-, ! * ! $ $ 6 " 2 # 2 " 3 1$ 2 $ % (* 0 -% 2 2(%$
13 ..-0 # $ 4(" $ -01712 + -02 %%$ " 2 $ 7 .$ $ ' 3$ '* 2 $ 2 $ 1 %$ 2 -0$ %%$ " 2 ,$ 11 -% 2 2 $ 4(" $ -01712 + (%$ 13 ..-0 # $ 4(" $ 1 -01712 + 1 0 ' 7 (4$ '# $ 2 $ $ (,2 ,# $ # 2 ! $ (+ .* ,2 # (, 2 $ ' 3 + , ! -# 7 -02 13 ..-0 ,# -0+ (,2 (, ,# 13 12 (, $ $ ' 2
Rev. 2.1
page 9
2010-09-01


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