 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| N-CHANNEL 20V - 0.030 - 5A SOT23-6L 2.7V-DRIVE STripFETTM II POWER MOSFET TYPE STT5NF20V s s s STT5NF20V VDSS 20 V RDS(on) < 0.040 ( @ 4.5 V ) < 0.045 ( @ 2.7 V ) ID 5A s TYPICAL RDS(on) = 0.030 @ 4.5 V TYPICAL RDS(on) = 0.037 @ 2.7 V ULTRA LOW THRESHOLD GATE DRIVE (2.7 V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SOT23-6L DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(*) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Value 20 20 12 5 3 20 1.6 Unit V V V A A A W Total Dissipation at TC = 25C Ptot (*) Pulse width limited by safe operating area. May 2002 . 1/8 STT5NF20V THERMAL DATA Rthj-amb Tj Tstg Thermal Resistance Junction-ambient Max. Operating Junction Temperature Storage Temperature Max 78 -55 to 150 -55 to 150 C/W C C ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 12V Min. 20 1 10 100 Typ. Max. Unit V A A nA ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 4.5 V VGS = 2.7 V ID = 250 A ID = 2.5 A ID = 2.5 A Min. 0.6 0.030 0.037 0.040 0.045 Typ. Max. Unit V DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS=15 V ID = 2.5 A Min. Typ. 9.5 460 200 50 Max. Unit S pF pF pF VDS = 15V f = 1 MHz, VGS = 0 2/8 STT5NF20V ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 2.5 A VDD = 10 V RG = 4.7 VGS = 4.5 V (Resistive Load, Figure 1) VDD= 16V ID= 5A VGS=4.5V (see test circuit, Figure 2) Min. Typ. 7 33 8.5 1.8 2.4 11.5 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf td(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions ID = 2.5 A VDD = 10 V RG = 4.7, VGS = 4.5 V (Resistive Load, Figure 1) ID = 5 A Vclamp = 16 V RG = 4.7, VGS = 4.5 V (Inductive Load, Figure 3) Min. Typ. 27 10 26 11 21 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A VGS = 0 26 13 1 Test Conditions Min. Typ. Max. 5 20 1.2 Unit A A V ns nC A di/dt = 100A/s ISD = 5 A VDD = 10 V Tj = 150C (see test circuit, Figure 3) (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STT5NF20V Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STT5NF20V Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics . . . 5/8 STT5NF20V Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 STT5NF20V SOT23-6L MECHANICAL DATA mm MIN. A A1 A2 b C D E E1 L e e1 0.90 0.00 0.90 0.25 0.09 2.80 2.60 1.50 0.35 0.95 1.90 TYP. MAX. 1.45 0.15 1.30 0.50 0.20 3.10 3.00 1.75 0.55 MIN. 0.035 0.000 0.035 0.010 0.004 0.110 0.102 0.059 0.014 0.037 0.075 mils TYP. MAX. 0.057 0.006 0.051 0.020 0.008 0.122 0.118 0.069 0.022 DIM. A A2 A1 b e1 e c L E D E1 7/8 STT5NF20V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8 |
Price & Availability of STT5NF20V
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |