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DC COMPONENTS CO., LTD. R MID122 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. TO-251 Pinning 1 = Base 2 = Collector 3 = Emitter .268(6.80) .252(6.40) .217(5.50) .205(5.20) 2 .022(0.55) .018(0.45) .063(1.60) .055(1.40) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o .284(7.20) .268(6.80) Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 100 100 5 8 20 +150 -55 to +150 Unit V V V A W o o .032 Max (0.80) .035 Max (0.90) 1 2 3 .059(1.50) .035(0.90) .256 Min (6.50) .024(0.60) .018(0.45) C .181 Typ (4.60) .095(2.40) .087(2.20) C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO VCE(sat)1 VCE(sat)2 VBE(sat) VBE(on) hFE1 hFE2 Cob 380s, Duty Cycle 2% Min 100 100 5 1K 100 - Typ 130 Max 10 10 2 2 4 4.5 2.8 12K - Unit V V V A A mA V V V V pF IC=1mA Test Conditions IC=30mA IE=1mA VCB=100V VCE=50V VEB=5V IC=4A, IB=16mA IC=8A, IB=80mA IC=8A, IB=80mA IC=4A, VCE=4V IC=4A, VCE=4V IC=8A, VCE=4V VCB=10V, f=1MHz Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) DC Current Gain(1) Output Capacitance (1)Pulse Test: Pulse Width |
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