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| PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6mm (0.062 in.) from case for 10s 50/60Hz, RMS IISOL 1mA t = 1min t = 1s Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C IXFN36N110P VDSS = ID25 = RDS(on) trr 1100V 36A 240m 300ns Maximum Ratings 1100 1100 30 40 36 110 18 2 20 1000 -55 ... +150 150 -55 ... +150 300 2500 3000 1.5/13 1.3/ 11.5 30 V V V V A A A J V/ns W C C C C V~ V~ Nm/lb.in. Nm/lb.in. g miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features * International standard package * Encapsulating epoxy meets UL 94 V-0, flammability classification * miniBLOC with Aluminium nitride isolation * Fast recovery diode * Unclamped Inductive Switching (UIS) Mounting torque Terminal connection torque rated * Low package inductance - easy to drive and to protect Advantages * Easy to mount * Space savings * High power density Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125C Characteristic Values Min. Typ. Max. 1100 3.5 6.5 300 50 4 240 V V nA A mA m Applications: High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters VGS = 10V, ID = 0.5 * ID25, Note 1 (c) 2008 IXYS Corporation, All rights reserved DS99902A (04/08) IXFN36N110P Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Gate input resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 0.5 * ID25, Note 1 Characteristic Values Min. Typ. Max. 20 32 23 1240 110 0.85 60 54 94 45 350 117 157 S nF pF pF ns ns ns ns nC nC nC 0.125 C/W C/W SOT-227B Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 20A, -di/dt = 100A/s VR= 100V, VGS = 0V Characteristic Values Min. Typ. Max. 36 144 1.5 300 2.3 16 A A V ns C A Notes1: Pulse test, t 300s; duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN36N110P Fig. 1. Output Characteristics @ 25C 40 35 30 VGS = 10V 7V 90 80 70 60 VGS = 10V 8V Fig. 2. Extended Output Characteristics @ 25C ID - Amperes ID - Amperes 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 5V 6V 7V 50 40 30 20 10 0 0 5 10 15 20 25 30 5V 6V VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125C 40 35 30 VGS = 10V 8V 3.0 2.8 2.6 Fig. 4. RDS(on) Normalized to ID = 18A Value vs. Junction Temperature VGS = 10V RDS(on) - Normalized 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 I D = 36A I D = 18A ID - Amperes 25 20 15 7V 6V 10 5 0 0 2 4 6 8 10 12 14 16 18 20 5V 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 18A Value vs. Drain Current 2.6 2.4 2.2 VGS = 10V TJ = 125C 40 35 30 Fig. 6. Maximum Drain Current vs. Case Temperature RDS(on) - Normalized ID - Amperes TJ = 25C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 10 20 30 40 50 60 70 80 90 25 20 15 10 5 0 -50 -25 0 25 50 75 100 125 150 ID - Amperes TC - Degrees Centigrade (c) 2008 IXYS Corporation, All rights reserved IXFN36N110P Fig. 7. Input Admittance 65 60 55 50 TJ = 125C 25C - 40C 70 60 TJ = - 40C 80 Fig. 8. Transconductance g f s - Siemens 45 ID - Amperes 40 35 30 25 20 15 10 5 0 4.0 4.5 5.0 5.5 50 40 30 20 10 0 25C 125C 6.0 6.5 7.0 7.5 8.0 8.5 0 10 20 30 40 50 60 70 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 90 80 12 70 16 14 VDS = 550V I D = 18A I G = 10mA Fig. 10. Gate Charge IS - Amperes 60 50 40 30 20 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 TJ = 125C VGS - Volts TJ = 25C 10 8 6 4 2 0 0 50 100 150 200 250 300 350 400 450 500 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance 100,000 1.000 Fig. 12. Maximum Transient Thermal Impedance Capacitance - PicoFarads 10,000 Ciss 1,000 Coss Z(th)JC - C / W 35 40 0.100 0.010 100 f = 1 MHz 10 0 5 10 15 20 25 30 Crss 0.001 0.0001 0.001 0.01 0.1 1 10 VDS - Volts Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_36N110P(99) 04-01-08-A |
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