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28LV64A
64K (8K x 8) Low Voltage CMOS EEPROM
FEATURES
* 2.7V to 3.6V Supply * Read Access Time--300 ns * CMOS Technology for Low Power Dissipation - 8 mA Active - 50 A CMOS Standby Current * Byte Write Time--3 ms * Data Retention >200 years * High Endurance - Minimum 100,000 Erase/Write Cycles * Automatic Write Operation - Internal Control Timer - Auto-Clear Before Write Operation - On-Chip Address and Data Latches * Data Polling * Ready/Busy * Chip Clear Operation * Enhanced Data Protection - VCC Detector - Pulse Filter - Write Inhibit * Electronic Signature for Device Identification * Organized 8Kx8 JEDEC Standard Pinout - 28-pin Dual-In-Line Package - 32-pin Chip Carrier (Leadless or Plastic) - 28-pin Thin Small Outline Package (TSOP) 8x20mm - 28-pin Very Small Outline Package (VSOP) 8x13.4mm * Available for Extended Temperature Ranges: - Commercial: 0C to +70C - Industrial: -40C to +85C
PACKAGE TYPES
RDY/BSY A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS
*1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3
2 RDY/BSY 1 NU
4 A7 3 A12
32 Vcc 31 WE 18 19
30 NC
29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 21 I/O6
14
15
16
17
* Pin 1 indicator on PLCC on top of package
OE A11 A9 A8 NC WE Vcc RDY/BSY A12 A7 A6 A5 A4 A3
OE A11 A9 A8 NC WE VCC RDY/BSY A12 A7 A6 A5 A4 A3
1 2 3 4 5 6 7 8 9 10 11 12 13 14
22 23 24 25 26 27 28 1 2 3 4 5 6 7
DESCRIPTION
The Microchip Technology Inc. 28LV64A is a CMOS 64K non-volatile electrically Erasable PROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycles without the need of external components. During a "byte write", the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Following the initiation of write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer. To determine when the write cycle is complete, the user has a choice of monitoring the Ready/Busy output or using Data polling. The Ready/Busy pin is an open drain output, which allows easy configuration in `wired-or' systems. Alternatively, Data polling allows the user to read the location last written to when the write operation is complete. CMOS design and processing enables this part to be used in systems where reduced power consumption and reliability are required. A complete family of packages is offered to provide the utmost flexibility in applications.
BLOCK DIAGRAM
I/O0...................I/O7 VSS VCC CE OE WE Rdy/ Busy A0 I I I I I I I I I I I A12 Data Protection Circuitry Chip Enable/ Output Enable Control Logic Auto Erase/Write Timing Program Voltage Generation Y Decoder Data Poll Input/Output Buffers
L a t c h e s
X Decoder
(c) 1996 Microchip Technology Inc.
Preliminary
This document was created with FrameMaker 4 0 4
I/O1 I/O2 Vss NU I/O3 I/O4 I/O5
28 27 26 25 24 23 22 21 20 19 18 17 16 15
21 20 19 18 17 16 15 14 13 12 11 10 9 8
Y Gating
64K bit Cell Matrix
DS21113B-page 1
20
DIP/SOIC
PLCC/LCC
A10 CE I/07 I/06 I/05 I/04 I/03 Vss I/02 I/01 I/00 A0 A1 A2
A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 VSS I/O2 I/O1 I/O0 A0 A1 A2
TSOP VSOP
28LV64A
1.0 ELECTRICAL CHARACTERISTICS
TABLE 1-1:
Name A0 - A12 CE OE WE I/O0 - I/O7 RDY/Busy VCC VSS NC NU Chip Enable Output Enable Write Enable Data Inputs/Outputs Ready/Busy + Power Supply Ground No Connect; No Internal Connection Not Used; No External Connection is Allowed
PIN FUCTION TABLE
Function Address Inputs
MAXIMUM RATINGS*
VCC and input voltages w.r.t. VSS ...... -0.6V to + 6.25V Voltage on OE w.r.t. VSS...................... -0.6V to +13.5V Voltage on A9 w.r.t. VSS....................... -0.6V to +13.5V Output Voltage w.r.t. VSS ............... -0.6V to VCC+0.6V Storage temperature .......................... -65C to +150C Ambient temp. with power applied .....-55C to +125C
*Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
TABLE 1-2:
READ/WRITE OPERATION DC CHARACTERISTICS
VCC = 2.7 to 3.6V Commercial (C): Tamb = 0C to 70C Industrial (I): Tamb = -40C to 85C
Parameter Input Voltages Input Leakage Input Capacitance Output Voltages
Status Logic "1" Logic "2" -- -- Logic "1" Logic "0" -- -- TTL input
Symbol VIH VIL ILI CIN VOH VOL ILO COUT ICC
Min 2.0 -- -- 2.0
Max 0.6 5 6
Units V V A pF V V A pF mA
Conditions
0.3 -- -- -- 5 12 8
Output Leakage Output Capacitance Power Supply Current, Activity
Power Supply Current, Standby
TTL input ICC(S)TTL TTL input ICC(S)TTL CMOS input ICC(S)CMOS
--
2 3 100
mA mA A
VIN = 0V to VCC+1 Vin = 0V; Tamb = 25C; f = 1 MHz (Note 1) IOH = -100A IOL = 1.0 mA I0L = 2.0 mA for RDY/Busy VOUT = 0V to VCC+0.1V VOUT = 0V; Tamb = 25C; f = 1 MHz (Note 1) f = 5 MHz (Note 2) IO = OmA VCC = 3.3 CE = VIL CE = VIH (0C to 70C) CE = VIH (-40C to 85C) CE = VCC -3.0 to VCC+1
Note 1: Not 100% tested. 2: AC power supply current above 5 MHz: 2 mA/Mhz.
DS21113B-page 2
Preliminary
(c) 1996 Microchip Technology Inc.
28LV64A
TABLE 1-3: READ OPERATION AC CHARACTERISTICS
AC Testing Waveform: Output Load: Input Rise and Fall Times: Ambient Temperature: VIH = 2.0V; VIL = 0.6V; VOH = VOL = VCC/2 1 TTL Load + 100 pF 20 ns Commercial (C): Tamb = 0C to +70C Industrial (I) : Tamb = -40C to +85C
Max Units Conditions OE = CE = VIL OE = VIL CE = VIL (Note 1) (Note 1)
Parameter Address to Output Delay CE to Output Delay OE to Output Delay CE or OE High to Output Float Output Hold from Address, CE or OE, whichever occurs first.
Sym
28LV64-30 Min
tACC tCE tOE tOFF tOH --
-- -- -- 0 0 10M
300 300 150 60 -- --
ns ns ns ns ns cycles
Endurance
25C, Vcc = 5.0V, Block Mode (Note 2)
Note 1: Not 100% tested. 2: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific application, please consult the Total Endurance Model which can be obtained on our BBS or website.
FIGURE 1-1:
READ WAVEFORMS
VIH Address VIL VIH CE VIL tCE(2) Address Valid
VIH OE VIL VOH Data VOL tACC VIH WE VIL Notes: (1) tOFF is specified for OE or CE, whichever occurs first (2) OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE (3) This parameter is sampled and is not 100% tested tOE(2) High Z tOFF(1,3) tOH Valid Output High Z
(c) 1996 Microchip Technology Inc.
Preliminary
DS21113B-page 3
28LV64A
TABLE 1-4: BYTE WRITE AC CHARACTERISTICS
AC Testing Waveform: Output Load: Input Rise/Fall Times: Ambient Temperature:
Parameter
Address Set-Up Time Address Hold Time Data Set-Up Time Data Hold Time Write Pulse Width OE Hold Time OE Set-Up Time Data Valid Time Time to Device Busy Write Cycle Time (28LV64A)
VIH = 2.0V; VIL = 0.6V; VOH = VOL = VCC/2 1 TTL Load + 100 pF 20 ns Commercial (C): Tamb = 0C to +70C Industrial (I) : Tamb = -40C to +85C
Max Units Remarks
Sym
Min
tAS tAH tDS tDH tWPL tOEH tOES tDV tDB tWC
10 100 120 10 150 10 10 1000 50 3
ns ns ns ns ns ns ns ns ns ms 1.5 ms typical (Note 2)
(Note 1)
Note 1: A write cycle can be initiated be CE or WE going low, whichever occurs last. The data is latched on the positive edge of CE or WE, whichever occurs first. 2: Data must be valid within 1000ns max. after a write cycle is initiated and must be stable at least until tDH after the positive edge of WE or CE, whichever occurs first.
FIGURE 1-2:
PROGRAMMING WAVEFORMS
Address
VIH VIL VIH VIL tAS tDV tAH tWPL tDS tDH
CE, WE
Data In
VIH VIL tOES
OE
VIH VIL tOEH VOH
Rdy/Busy
Busy
VOL
twc
tDB
Ready
DS21113B-page 4
Preliminary
(c) 1996 Microchip Technology Inc.
28LV64A
FIGURE 1-3:
VIH
Address VIL Address Valid t ACC t CE t WPH
DATA POLLING WAVEFORMS
Last Written Address Valid
VIH
CE VIL
VIH
WE VIL
t WPL t OE
VIH
OE VIL
t DV VIH
Data VIL Data In Valid t WC I/O7 Out True Data Out
FIGURE 1-4:
CHIP CLEAR WAVEFORMS
VIH CE VIL VH OE VIH VIH WE VIL tW = 10ms tS = tH = 1s VH = 12.0V 0.5V tS tW tH
TABLE 1-5:
SUPPLEMENTARY CONTROL
Mode CE VIL VIL OE VH VIL VIH WE VIH AI X A9 = VH A9 = VH VCC VCC VCC VCC I/OI Data Out Data In
Chip Clear Extra Row Read Extra Row Write Note: VH = 12.0V 0.5V
(c) 1996 Microchip Technology Inc.
Preliminary
DS21113B-page 5
28LV64A
2.0 DEVICE OPERATION
2.4 Write Mode
The Microchip Technology Inc. 28LV64A has four basic modes of operation--read, standby, write inhibit, and byte write--as outlined in the following table. The 28LV64A has a write cycle similar to that of a static RAM. The write cycle is completely self-timed and initiated by a low going pulse on the WE pin. On the falling edge of WE, the address information is latched. On rising edge, the data and the control pins (CE and OE) are latched. The Ready/Busy pin goes to a logic low level indicating that the 28LV64A is in a write cycle which signals the microprocessor host that the system bus is free for other activity. When Ready/Busy goes back to a high, the 28LV64A has completed writing and is ready to accept another cycle.
Operation Mode CE OE WE I/O Read Standby Write Inhibit Write Inhibit Write Inhibit Byte Write Byte Clear L H H X X L L X X L X H H X X X H L DOUT High Z High Z High Z High Z DIN
Rdy/Busy(1) H H H H H L
Automatic Before Each "Write" Note: (1) Open drain output.
2.5
Data Polling
2.1
Read Mode
The 28LV64A has two control functions, both of which must be logically satisfied in order to obtain data at the outputs. Chip enable (CE) is the power control and should be used for device selection. Output Enable (OE) is the output control and is used to gate data to the output pins independent of device selection. Assuming that addresses are stable, address access time (tACC) is equal to the delay from CE to output (tCE). Data is available at the output tOE after the falling edge of OE, assuming that CE has been low and addresses have been stable for at least tACC-tOE.
The 28LV64A features Data polling to signal the completion of a byte write cycle. During a write cycle, an attempted read of the last byte written results in the data complement of I/O7 (I/O0 to I/O6 can not be determined). After completion of the write cycle, true data is available. Data polling allows a simple read/compare operation to determine the status of the chip eliminating the need for external hardware.
2.6
Electronic Signature for Device Identification
2.2
Standby Mode
An extra row of 32 bytes of EEPROM memory is available to the user for device identification. By raising A9 to 12V 0.5V and using address locations 1FEO to 1FFF, the additional bytes can be written to or read from in the same manner as the regular memory array.
The 28LV64A is placed in the standby mode by applying a high signal to the CE input. When in the standby mode, the outputs are in a high impedance state, independent of the OE input.
2.7
Chip Clear
2.3
Data Protection
All data may be cleared to 1's in a chip clear cycle by raising OE to 12 volts and bringing the WE and CE low. This procedure clears all data, except for the extra row.
In order to ensure data integrity, especially during critical power-up and power-down transitions, the following enhanced data protection circuits are incorporated: First, an internal VCC detect (2.0 volts typical) will inhibit the initiation of non-volatile programming operation when VCC is less than the VCC detect circuit trip. Second, holding WE or CE high or OE low, inhibits a write cycle during power-on and power-off (VCC).
DS21113B-page 6
Preliminary
(c) 1996 Microchip Technology Inc.
28LV64A
28LV64A Product Identification System
To order or to obtain information (e.g., on pricing or delivery), please use the listed part numbers, and refer to the factory or the listed sales offices.
28LV64A -
F T - 20
I
/P Package: L = Plastic Leaded Chip Carrier (PLCC) P = Plastic DIP SO = Plastic Small Outline IC TS = Thin Small Outline Package (TSOP) 8 x 20 mm VS = Very Small Outline Package (VSOP) 8 x 13.4 mm Blank = 0C to +70C I = -40C to +85C 20 = 200 ns 30 - 300 ns Blank = Tube T = Tape and Reel "L" and "SO" Blank = twc = 1ms F = twc = 200s 24LV64A 8K x 8 CMOS EEPROM
Temperature Range: Access Time: Shipping:
Option: Device:
(c) 1996 Microchip Technology Inc.
Preliminary
DS21113B-page 7
WORLDWIDE SALES & SERVICE
AMERICAS
Corporate Office Microchip Technology Inc. 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 602 786-7200 Fax: 602 786-7277 Technical Support: 602 786-7627 Web: http://www.microchip.com Atlanta Microchip Technology Inc. 500 Sugar Mill Road, Suite 200B Atlanta, GA 30350 Tel: 770 640-0034 Fax: 770 640-0307 Boston Microchip Technology Inc. 5 Mount Royal Avenue Marlborough, MA 01752 Tel: 508 480-9990 Fax: 508 480-8575 Chicago Microchip Technology Inc. 333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 708 285-0071 Fax: 708 285-0075 Dallas Microchip Technology Inc. 14651 Dallas Parkway, Suite 816 Dallas, TX 75240-8809 Tel: 972 991-7177 Fax: 972 991-8588 Dayton Microchip Technology Inc. Suite 150 Two Prestige Place Miamisburg, OH 45342 Tel: 513 291-1654 Fax: 513 291-9175 Los Angeles Microchip Technology Inc. 18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 714 263-1888 Fax: 714 263-1338 New York Microchip Technmgy Inc. 150 Motor Parkway, Suite 416 Hauppauge, NY 11788 Tel: 516 273-5305 Fax: 516 273-5335 San Jose Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408 436-7950 Fax: 408 436-7955 Toronto Microchip Technology Inc. 5925 Airport Road, Suite 200 Mississauga, Ontario L4V 1W1, Canada Tel: 905 405-6279 Fax: 905 405-6253
ASIA/PACIFIC
China Microchip Technology Unit 406 of Shanghai Golden Bridge Bldg. 2077 Yan'an Road West, Hongiao District Shanghai, Peoples Republic of China Tel: 86 21 6275 5700 Fax: 011 86 21 6275 5060 Hong Kong Microchip Technology RM 3801B, Tower Two Metroplaza 223 Hing Fong Road Kwai Fong, N.T. Hong Kong Tel: 852 2 401 1200 Fax: 852 2 401 3431 India Microchip Technology No. 6, Legacy, Convent Road Bangalore 560 025 India Tel: 91 80 526 3148 Fax: 91 80 559 9840 Korea Microchip Technology 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku, Seoul, Korea Tel: 82 2 554 7200 Fax: 82 2 558 5934 Singapore Microchip Technology 200 Middle Road #10-03 Prime Centre Singapore 188980 Tel: 65 334 8870 Fax: 65 334 8850 Taiwan, R.O.C Microchip Technology 10F-1C 207 Tung Hua North Road Taipei, Taiwan, ROC Tel: 886 2 717 7175 Fax: 886 2 545 0139
EUROPE
United Kingdom Arizona Microchip Technology Ltd. Unit 6, The Courtyard Meadow Bank, Furlong Road Bourne End, Buckinghamshire SL8 5AJ Tel: 44 1628 850303 Fax: 44 1628 850178 France Arizona Microchip Technology SARL Zone Industrielle de la Bonde 2 Rue du Buisson aux Fraises 91300 Massy - France Tel: 33 1 69 53 63 20 Fax: 33 1 69 30 90 79 Germany Arizona Microchip Technology GmbH Gustav-Heinemann-Ring 125 D-81739 Muenchen, Germany Tel: 49 89 627 144 0 Fax: 49 89 627 144 44 Italy Arizona Microchip Technology SRL Centro Direzionale Colleone Pas Taurus 1 Viale Colleoni 1 20041 Agrate Brianza Milan Italy Tel: 39 39 6899939 Fax: 39 39 689 9883
JAPAN
Microchip Technology Intl. Inc. Benex S-1 6F 3-18-20, Shin Yokohama Kohoku-Ku, Yokohama Kanagawa 222 Japan Tel: 81 45 471 6166 Fax: 81 45 471 6122
9/3/96
All rights reserved. (c) 1996, Microchip Technology Incorporated, USA. 9/96
Printed on recycled paper.
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip's products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. The Microchip logo and name are registered trademarks of Microchip Technology Inc. All rights reserved. All other trademarks mentioned herein are the property of their respective companies.
DS21113B-page 8
Preliminary
(c) 1996 Microchip Technology Inc.

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