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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS VDSS ID25 RDS(on) trr = 800 V = 14 A 720 m 250 ms TO-247 (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 5 TC = 25C Maximum Ratings 800 800 30 40 14 40 7 30 500 10 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W C C C C C PLUS220 (IXFV) G D (TAB) D (TAB) TO-3P (IXFQ) S TO-268 (IXFT) G S D (TAB) G D (TAB) 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-247, TO-3P) PLUS220, PLUS220 SMD TO-268, TO-3P TO-247 300 260 D S 1.13/10 Nm/lb.in. 2 5.5 6 g g g PLUS220SMD (IXFV...S) G S G = Gate S = Source D = Drain TAB = Drain D (TAB) Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250A VDS = VGS, ID = 4 mA VGS = 30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125C Characteristic Values Min. Typ. Max. 800 3.0 5.5 100 25 1 V V nA A mA Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density DS99593E(07/06) VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % 720 m (c) 2006 IXYS All rights reserved IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 8 15 3900 VGS = 0 V, VDS = 25 V, f = 1 MHz 250 19 26 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 5 (External) 29 62 27 61 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 18 20 S pF pF pF ns ns ns ns nC nC nC 0.31 C/W (TO-247, TO-3P) 0.21 C/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 (IXFH) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VDS= 20 V; ID = 0.5 ID25, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 14 40 1.5 A A V Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXFT) Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A, -di/dt = 100 A/s VR = 100V 0.4 5 250 ns C A PLUS220SMD (IXFV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS Fig. 1. Output Characteristics @ 25C 14 VGS = 10V 7V 27 24 21 10 VGS = 10V 7V Fig. 2. Extended Output Characteristics @ 25C 12 ID - Amperes 8 6 ID - Amperes 6V 18 15 12 9 6V 4 5V 2 6 3 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 3 6 9 12 15 18 21 24 27 30 5V 0 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125C 14 VGS = 10V 12 6V 10 2.8 2.5 3.1 Fig. 4. RDS(on) Normalized to ID = 7A Value vs. Junction Temperature VGS = 10V RDS(on) - Normalized ID - Amperes 2.2 1.9 1.6 1.3 1 I D = 14A 8 5V 6 I D = 7A 4 2 0.7 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -50 -25 0 25 50 75 100 125 150 0 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 7A Value vs. Drain Current 2.8 2.6 2.4 VGS = 10V TJ = 125C 16 14 12 2.2 Fig. 6. Maximum Drain Current vs. Case Temperature RDS(on) - Normalized ID - Amperes TJ = 25C 0 4 8 12 16 20 24 28 2 1.8 1.6 1.4 10 8 6 4 1.2 1 0.8 2 0 -50 -25 0 25 50 75 100 125 150 I D - Amperes TC - Degrees Centigrade (c) 2006 IXYS All rights reserved IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS Fig. 7. Input Admittance 20 18 16 14 30 27 24 Fig. 8. Transconductance g f s - Siemens 21 18 15 12 9 6 3 0 TJ = - 40C 25C 125C ID - Amperes 12 10 8 6 4 2 0 3.5 4 TJ = 125C 25C - 40C 4.5 5 5.5 6 0 2 4 6 8 10 12 14 16 18 20 VGS - Volts I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 45 40 35 10 9 8 7 VDS =400V I D = 7A I G = 10mA Fig. 10. Gate Charge IS - Amperes 30 VGS - Volts TJ = 25C 6 5 4 3 2 1 0 25 TJ = 125C 20 15 10 5 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 10 20 30 40 50 60 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance 10,000 f = 1 MHz 1.000 Fig. 13. Maximum Transient Thermal Resistance Capacitance - PicoFarads C iss R(th)JC - C / W 1,000 0.100 C oss 100 C rss 10 0 5 10 15 20 25 30 35 40 0.010 0.0001 0.001 0.01 0.1 1 10 VDS - Volts Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_14N80P (6J) 5-02-06.xls IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS TO-3P-3L PACKAGE Outline PLUS220 (IXFV) Outline 1. GATE 2. DRAIN (COLLECTOR) 3. SOURCE (EMITTER) 4. DRAIN (COLLECTOR) ALL METAL AREA ARE TIN PLATED. Ref: IXYS CO 0170 RA (c) 2006 IXYS All rights reserved |
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