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| MegaMOSTMFET IRFP 360 VDSS = 400 V = 23 A ID25 RDS(on) = 0.20 N-Channel Enhancement Mode Preliminary data Symbol VDSS VDGR VGS VGSM ID25 ID100 IDM IAR EAR dv/dt Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1.0 M Continuous Transient TC = 25C TC = 100C TC = 25C, pulse width limited by TJM TC = 25C IS IDM, di/dt TJ 150C, RG = 2 TC = 25C Maximum Ratings 400 400 20 30 23 14 92 23 30 5 V V V V A A A A mJ V/ns D (TAB) TO-247 AD G = Gate, S = Source, D = Drain, TAB = Drain PD TJ TJM T stg Md Weight 300 -55 ... +150 150 -55 ... +150 W C C C Nm/lb.in. g C Features * * * * * Mounting torque 1.13/10 6 300 Max lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Fast switching times International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure High commuting dv/dt rating Applications Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 400 2 4 100 TJ = 25C TJ = 125C 25 250 0.20 V V nA A A Advantages * * * * * * * VDSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 14A Pulse test, t 300 s, duty cycle d 2% DC choppers Motor Controls Switch-mode and resonant-mode Uninterruptable power supplies (UPS) Space savings High power density Easy to mount with 1 screw (isolated mounting screw hole) This data reflects the objective technical specification and characterization data from engineering lots. IXYS reserves the right to change limits, test conditions, and dimensions. 95509A (4/95) (c) 2000 IXYS All rights reserved 1-2 IRFP 360 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 14 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 1100 490 24 33 100 30 210 30 110 0.45 0.25 S pF pF pF ns ns ns ns Dim. Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD Outline gfs Ciss C oss C rss t d(on) tr td(off) tf Q g(on) Q gs Q gd R thJC R thCK VDS = 10 V; ID = 14 A, pulse test VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 4.3 (External) VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 nC nC nC K/W K/W Source-Drain Diode Symbol IS ISM VSD Test Conditions VGS= 0 Ratings and Characteristics (TJ = 25C unless otherwise specified) Min. Typ. Max. 23 92 1.8 A A V Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s 420 5.6 t rr Q rr 630 8.4 ns C (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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