 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| STB26NM60N, STF26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 , 20 A MDmeshTM II Power MOSFET D2PAK, TO-220FP, TO-220, TO-247 Features Type STB26NM60N STF26NM60N STP26NM60N STW26NM60N VDSS 600 V 600 V 600 V 600 V RDS(on) max < 0.165 < 0.165 < 0.165 < 0.165 ID 3 3 20 A 20 A 20 A 20 A 1 2 1 2 TO-220FP TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 3 2 1 3 DPAK TO-247 Application Switching applications Figure 1. Internal schematic diagram Description This series of devices implements second generation MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking Package DPAK TO-220FP 26NM60N TO-220 TO-247 Tube Packaging Tape and reel Order codes STB26NM60N STF26NM60N STP26NM60N STW26NM60N December 2009 Doc ID 15642 Rev 2 1/17 www.st.com 17 Contents STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 Doc ID 15642 Rev 2 STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Value Parameter TO-247, TO-220, DPAK 600 25 20 12.6 80 140 1.12 15 2500 -55 to 150 150 20 (1) Unit TO-220FP V V A A A W VDS VGS ID ID IDM (2) Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor 12.6 (1) 80(1) 30 0.24 PTOT dv/dt (3) VISO Tstg Tj Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 C) Storage temperature Max. operating junction temperature V/ns V C C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 20 A, di/dt 400 A/s, VDD 80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb Rthj-pcb Tl Thermal data Value Parameter TO-247 TO-220 DPAK TO-220FP Thermal resistance junction-case max Thermal resistance junction-ambient max Thermal resistance junction-pcb max Maximum lead temperature for soldering purpose 300 50 0.89 62.5 30 4.17 62.5 C/W C/W C/W C Unit Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting TJ=25 C, ID=IAS, VDD=50 V) Value 8.5 610 Unit A mJ Doc ID 15642 Rev 2 3/17 Electrical characteristics STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS = 0 VDS = Max rating VDS = Max rating, @125 C VGS = 20 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 10 A 2 3 Min. 600 1 10 0.1 4 Typ. Max. Unit V A A A V 0.135 0.165 Table 6. Symbol Ciss Coss Crss Coss eq. (1) Qg Qgs Qgd Rg Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions Min. Typ. 1800 115 1.1 310 60 8.5 30 2.8 Max. Unit pF pF pF pF nC nC nC VDS = 50 V, f = 1 MHz, VGS = 0 - - VGS = 0, VDS = 0 to 480 V VDD = 480 V, ID = 20 A, VGS = 10 V, (see Figure 19) f=1 MHz Gate DC Bias=0 Test signal level = 20 mV open drain - - - - - - 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 4/17 Doc ID 15642 Rev 2 STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 10 A RG = 4.7 VGS = 10 V (see Figure 18) Min. Typ. Max. Unit 13 25 85 50 ns ns ns ns - - Table 8. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, VGS = 0 ISD = 20 A, di/dt = 100 A/s VDD = 60 V (see Figure 20) ISD = 20 A, di/dt = 100 A/s VDD = 60 V, Tj = 150 C (see Figure 20) Test conditions Min 370 5.8 31.6 450 7.5 32.5 Typ. Max 20 80 1.5 Unit A A V ns C A ns C A - 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 s, duty cycle 1.5% Doc ID 15642 Rev 2 5/17 Electrical characteristics STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N 2.1 Figure 2. ID (A) Electrical characteristics (curves) Safe operating area for TO-220, DPAK AM03314v1 Figure 3. Thermal impedance for TO-220, DPAK 10 Op Lim era ite tion d b in y m this ax ar Re DS (o n) ai s 1s 10s 100s 1ms Tj=150C Tc=25C Sinlge pulse 10ms 1 0.1 0.1 1 10 100 VDS(V) Figure 4. ID (A) Safe operating area for TO-220FP AM03315v1 Figure 5. Thermal impedance for TO-220FP pe ra ite tion d by in t m his ax a RD rea is 10 S( on ) 10s 100s 1ms 10ms O 1 Li m 0.1 Tj=150C Tc=25C Sinlge pulse 0.01 0.1 1 10 100 VDS(V) Figure 6. ID (A) Safe operating area for TO-247 AM03316v1 Figure 7. Thermal impedance for TO-247 Op Lim era ite tion d by in th m is ax a r Re DS (o 10 a n) is 10s 100s 1ms Tj=150C Tc=25C Sinlge pulse 10ms 1 0.1 0.01 0.1 1 10 100 VDS(V) 6/17 Doc ID 15642 Rev 2 STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N Figure 8. Output characteristics Figure 9. Electrical characteristics Transfer characteristics Figure 10. Transconductance GFS (S) 8.5 TJ=25C 6.5 TJ=150C 4.5 AM03318v1 Figure 11. Static drain-source on resistance RDS(on) () 0.16 0.15 0.14 0.13 0.12 ID=10A VGS=10V AM03317v1 TJ=-50C 2.5 0.11 0.5 0 5 10 15 20 0.1 ID(A) 0 5 10 15 20 ID(A) Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations VGS (V) 12 VDS 10 8 6 4 10 2 0 0 10 20 30 40 50 60 Qg(nC) 1 0.1 1 10 100 Crss AM03320v1 VDD=480V ID=20A VGS C (pF) 10000 AM03319v1 Ciss 1000 100 Coss VDS(V) Doc ID 15642 Rev 2 7/17 Electrical characteristics STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N Figure 15. Normalized on resistance vs temperature RDS(on) (norm) 2.1 AM03322v1 Figure 14. Normalized gate threshold voltage vs temperature VGS(th) (norm) 1.1 AM03321v1 1.0 1.7 0.9 1.3 0.8 0.9 0.7 -50 -25 0 25 50 75 100 TJ(C) 0.5 -50 -25 0 25 50 75 100 TJ(C) Figure 16. Source-drain diode forward characteristics VSD (V) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 ISD(A) TJ=25C TJ=150C AM03324v1 Figure 17. Normalized BVDSS vs temperature BVDSS (norm) 1.07 1.05 1.03 1.01 0.99 0.97 0.95 0.93 -50 -25 0 25 50 75 100 TJ(C) AM03323v1 TJ=-50C 8/17 Doc ID 15642 Rev 2 STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N Test circuits 3 Test circuits Figure 19. Gate charge test circuit VDD 12V 2200 Figure 18. Switching times test circuit for resistive load 47k 100nF 1k RL VGS VD RG PW D.U.T. F 3.3 F VDD Vi=20V=VGMAX 2200 F IG=CONST 100 2.7k 47k PW 1k AM01469v1 D.U.T. VG AM01468v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A D G S B 25 D.U.T. A FAST DIODE B A L=100H B D G 3.3 F 1000 F L VD 2200 F 3.3 F VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform V(BR)DSS VD Figure 23. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 Doc ID 15642 Rev 2 9/17 Package mechanical data STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/17 Doc ID 15642 Rev 2 STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N Package mechanical data TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 oP oR S Doc ID 15642 Rev 2 11/17 Package mechanical data STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N TO-220FP mechanical data mm Dim. Min. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.8 2.9 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 3.6 16.4 9.3 3.2 Typ. Max. 4.6 2.7 2.75 0.7 1 1.70 1.5 5.2 2.7 10.4 L7 E A B Dia L6 L5 F1 F2 F D H G1 G L2 L 3 L4 7012510_Rev_J 12/17 Doc ID 15642 Rev 2 STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 Doc ID 15642 Rev 2 13/17 Package mechanical data STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N D2PAK (TO-263) mechanical data Dim A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 mm Min 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0 8 0 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 in c h Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8 0079457_M 14/17 Doc ID 15642 Rev 2 STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N Packaging mechanical data 5 Packaging mechanical data D 2 PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 Doc ID 15642 Rev 2 15/17 Revision history STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N 6 Revision history Table 9. Date 29-Apr-2009 17-Dec-2009 Document revision history Revision 1 2 First release Added new package, mechanical data: DPAK Changes 16/17 Doc ID 15642 Rev 2 STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 15642 Rev 2 17/17 |
Price & Availability of STB26NM60N
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |