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FDMS86322 N-Channel PowerTrench(R) MOSFET
October 2010
FDMS86322
N-Channel PowerTrench(R) MOSFET
80 V, 60 A, 7.65 m: Features
Max rDS(on) = 7.65 m: at VGS = 10 V, ID = 13 A Max rDS(on) = 12 m: at VGS = 6 V, ID = 7.2 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor`s advanced Power Trench(R) process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
DC-DC Conversion
Top
Bottom Pin 1 S S D S G D D D D D D D 5 6 7 8 4 3 2 1 G S S S
Power 56
MOSFET Maximum Ratings TA = 25 C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 C TA = 25 C (Note 1a) (Note 3) TC = 25 C TC = 25 C TA = 25 C (Note 1a) Ratings 80 20 60 83 13 200 135 104 2.5 -55 to +150 mJ W C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.2 50 C/W
Package Marking and Ordering Information
Device Marking FDMS86322 Device FDMS86322 Package Power 56
1
Reel Size 13 ''
Tape Width 12 mm
Quantity 3000 units
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(c)2010 Fairchild Semiconductor Corporation FDMS86322 Rev C
FDMS86322 N-Channel PowerTrench(R) MOSFET
Electrical Characteristics TJ = 25 C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS 'BVDSS 'TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current, Forward ID = 250 PA, VGS = 0 V ID = 250 PA, referenced to 25 C VDS = 64 V, VGS = 0 V VGS = 20 V, VDS = 0 V 80 66 800 100 V mV/C nA nA
On Characteristics
VGS(th) 'VGS(th) 'TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 PA ID = 250 PA, referenced to 25 C VGS = 10 V, ID = 13 A VGS = 6 V, ID = 7.2 A VGS = 10 V, ID = 13 A, TJ = 125 C VDS = 10 V, ID = 13 A 2.0 2.9 -9 6.1 8.2 10.7 45 7.65 12 14 S m: 4.0 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 2255 460 30 1.0 3000 610 45 pF pF pF :
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 50 V, ID = 13 A VDD = 50 V, ID = 13 A, VGS = 10 V, RGEN = 6 : 15 11 27 7 39 22 9.5 10.8 27 20 44 13 55 31 ns ns ns ns nC nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 2.1 A VGS = 0 V, IS = 13 A (Note 2) (Note 2) 0.7 0.8 56 61 1.2 1.3 90 98 V ns nC
IF = 13 A, di/dt = 100 A/Ps
Notes: 1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design.
a. 50 C/W when mounted on a 1 in2 pad of 2 oz copper.
b. 125 C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. 3. Starting TJ = 25 C, L = 0.3 mH, IAS = 30 A, VDD = 75 V, VGS = 10 V
FDMS86322 Rev C
2
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FDMS86322 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
200
PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX VGS = 6 V
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
5
VGS = 10 V
VGS = 4.5 V
ID, DRAIN CURRENT (A)
150
4
VGS = 5 V
3
VGS = 5.5 V
100
VGS = 5.5 V
2
VGS = 6 V
50
VGS = 5 V VGS = 4.5 V
1
PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX VGS = 10 V
0 0 1 2 3 4 5
VDS, DRAIN TO SOURCE VOLTAGE (V)
0 0 50 100 ID, DRAIN CURRENT (A) 150 200
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
40
SOURCE ON-RESISTANCE (m:)
2.0
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75
ID = 13 A VGS = 10 V
ID = 13 A
PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX
30
rDS(on), DRAIN TO
20
TJ = 125 oC
10
TJ = 25 oC
-50
-25
0
25
50
75
100 125 150
0 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance vs Junction Temperature
200
PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX
IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance vs Gate to Source Voltage
100
VGS = 0 V
ID, DRAIN CURRENT (A)
150
VDS = 5 V
10
TJ = 150 oC TJ = 25 oC
100
TJ = 150 oC TJ = 25 oC TJ = -55 oC
1
50
0.1
TJ = -55 oC
0 1 2 3 4 5 6 7 8
VGS, GATE TO SOURCE VOLTAGE (V)
0.01 0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
FDMS86322 Rev C
3
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FDMS86322 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
10
VGS, GATE TO SOURCE VOLTAGE (V) ID = 13 A VDD = 50 V CAPACITANCE (pF)
10000
Ciss
VDD = 75 V
8
VDD = 25 V
1000
Coss
6 4 2
100
f = 1 MHz VGS = 0 V
Crss
0 0 10 20
Qg, GATE CHARGE (nC)
30
40
10 0.1
1
10
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
90
ID, DRAIN CURRENT (A)
100
IAS, AVALANCHE CURRENT (A)
75 60
VGS = 10 V
TJ = 25 oC
10
TJ = 100
oC
45
Limited by Package
30
VGS = 6 V
TJ = 125 oC
15
RTJC = 1.2 C/W
o
1 0.001
0.01
0.1
1
10
100
0 25
50
75
100
o
125
150
tAV, TIME IN AVALANCHE (ms)
Tc, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching Capability
300 100
ID, DRAIN CURRENT (A)
Figure 10. Maximum Continuous Drain Current vs Case Temperature
2000 1000
P(PK), PEAK TRANSIENT POWER (W)
VGS = 10 V
SINGLE PULSE RTJA = 125 oC/W TA = 25 oC
10
1 ms
100
10 ms
1
THIS AREA IS LIMITED BY rDS(on)
100 ms 1s 10 s DC
10
0.1
SINGLE PULSE TJ = MAX RATED RTJA = 125 oC/W TA = 25 oC
0.01 0.01
0.1
1
10
100
400
1 0.5 -3 10
10
-2
10
-1
1
10
100
1000
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
FDMS86322 Rev C
4
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FDMS86322 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
2 1
NORMALIZED THERMAL IMPEDANCE, ZTJA DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
0.01
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA
SINGLE PULSE
0.001 0.0005 -3 10
RTJA = 125 C/W
o
10
-2
10
-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
FDMS86322 Rev C
5
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FDMS86322 N-Channel PowerTrench(R) MOSFET
Dimensional Outline and Pad Layout
FDMS86322 Rev C
6
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FDMS86322 N-Channel Power Trench(R) MOSFET
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Power-SPMTM AccuPowerTM F-PFSTM (R)* PowerTrench(R) Auto-SPMTM FRFET(R) SM Global Power Resource PowerXSTM Build it NowTM The Power Franchise(R) (R) Green FPSTM Programmable Active DroopTM CorePLUSTM Green FPSTM e-SeriesTM QFET(R) CorePOWERTM QSTM CROSSVOLTTM GmaxTM TinyBoostTM Quiet SeriesTM CTLTM GTOTM TinyBuckTM RapidConfigureTM IntelliMAXTM Current Transfer LogicTM TinyCalcTM ISOPLANARTM DEUXPEED(R) TM TinyLogic(R) Dual CoolTM MegaBuckTM TINYOPTOTM (R) EcoSPARK Saving our world, 1mW/W/kW at a timeTM MICROCOUPLERTM TinyPowerTM EfficentMaxTM SignalWiseTM MicroFETTM TinyPWMTM ESBCTM SmartMaxTM MicroPakTM TinyWireTM SMART STARTTM MicroPak2TM (R) TriFault DetectTM SPM(R) MillerDriveTM TRUECURRENTTM* STEALTHTM MotionMaxTM Fairchild(R) PSerDesTM SuperFETTM Motion-SPMTM Fairchild Semiconductor(R) SuperSOTTM-3 OptiHiTTM FACT Quiet SeriesTM SuperSOTTM-6 OPTOLOGIC(R) FACT(R) UHC(R) OPTOPLANAR(R) SuperSOTTM-8 FAST(R) (R) Ultra FRFETTM SupreMOSTM FastvCoreTM UniFETTM SyncFETTM FETBenchTM VCXTM Sync-LockTM FlashWriter(R) * PDP SPMTM VisualMaxTM FPSTM XSTM
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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I48
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FDMS86322 Rev.C
7
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