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| APT20DC120HJ ISOTOP(R) SiC Diode Full Bridge Power Module VRRM = 1200V IC = 20A @ Tc = 100C Application * * * * Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features * SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF ISOTOP(R) Package (SOT-227) Very low stray inductance High level of integration * * * + ~ ISOTOP(R) Benefits * * * * * * Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant ~ Absolute maximum ratings Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 10 s Max ratings 1200 TC = 100C TC = 25C 20 250 Unit V A November, 2009 1-3 APT20DC120HJ - Rev 0 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APT20DC120HJ All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM QC C Diode Forward Voltage Maximum Reverse Leakage Current Total Capacitive Charge Total Capacitance Test Conditions IF = 20A Tj = 25C Tj = 175C Tj = 25C VR = 1200V Tj = 175C IF = 20A, VR = 600V di/dt =1000A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min Typ 1.6 2.3 64 112 80 192 138 Max 1.8 3.0 400 2000 Unit V A nC pF Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min Typ Max 0.8 20 175 300 1.5 Unit C/W V C N.m g Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 29.2 SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 0.75 (.030) 0.85 (.033) 25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 1.95 (.077) 2.14 (.084) November, 2009 2-3 APT20DC120HJ - Rev 0 Dimensions in Millimeters and (Inches) www.microsemi.com APT20DC120HJ Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0 0.00001 Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 200 TJ=25C 40 IF Forward Current (A) IR Reverse Current (A) 30 TJ=75C 150 20 TJ=125C 100 TJ=75C TJ=125C TJ=175C TJ=25C 10 TJ=175C 50 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) Capacitance vs.Reverse Voltage 0 400 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) 1400 C, Capacitance (pF) 1200 1000 800 600 400 200 0 1 November, 2009 3-3 APT20DC120HJ - Rev 0 10 100 VR Reverse Voltage 1000 ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com |
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