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| 4 Micron CMOS Process Family Features Process parameters Process Parameters 4m 10 volts Metal I pitch (width/space) Metal II pitch (width/space) Poly pitch (width/space) Contact Via Gate geometry P-well junction depth N+ junction depth P+ junction depth Gate oxide thickness Inter poly oxide thick. 4/4 3/4 4/4 4x4 3x3 4.0 5.7 1.5 0.90 640 800 * Double Poly / Double Metal 4m 15 volts 4 /4 3/4 4 /4 4x4 3x3 4.0 7.0 1.4 0.95 800 625 m m m m m m m m m A A Units * 8 m Poly and Metal Pitch * 10 Volts Maximum Operating Voltage * 15 Volts High Voltage Option * Isolated Vertical PNP Bipolar Module Description Dalsa Semiconductor's 4m process is a double poly/double metal CMOS process with an operating voltage range of 5 to 10 volts. In addition, a high voltage option is also available in which a special drain structure allows the maximum operating voltage to be increased to 18 volts. No compromises are made with packing density since all high voltage gates are drawn at 4m. Also, an Isolated Vertical PNP bipolar module with good gain characteristics and high BVceo can be implemented on both options. MOSFET Electrical parameters Electrical Parameters 4 MICRON - 10 volts N Channel min. typ. max. Vt (50x4m) Ids (50x4m) 0.4 0.7 32 0.9 P Channel min. typ. max. 0.4 0.7 17 0.9 4 MICRON - 15 volts N Channel min. typ. max. 0.6 0.9 94 1.2 P Channel min. typ. max. 0.8 1.1 37 1.4 Units Conditions V A/m saturation 10V : Vds=Vgs= 3v 15V : Vds=Vgs=7.5v Body factor Bvdss 15 0.8 >20 15 0.4 >20 20 1.3 27 20 0.5 22 v V 10V : Ids=1A 15V : Ids=20nA Vds=0.1v Ids = 14 A L drawn = 4m Subthres. slope Field threshold L effective 12 114 34 1.6 12 90 25 2.6 18 108 24 1.9 18 80 22 2.6 mV/dec. V m www.dalsasemi.com For More Information: DALSA Semiconductor Sales 18 Boulevard de l'Aeroport Bromont, Quebec, Canada J2L 1S7 Tel : Fax email: (450) 534-2321 ext. 1448 (800) 718-9701 (450) 534-3201 dalsasales@dalsasemi.com 4 Micron CMOS Process Family (cont'd) Resistances ( /sq.) 4 m - 10 volts min. Pwell Pfield in Pwell N+ P+ Poly gate Poly capacitor Metal I Metal II 1000 6 70 14 30 typ. 5200 2000 9 94 21 43 0.038 0.038 3000 14 110 26 80 1000 30 75 16 20 max. FIG 1: I-V Characteristics for a 50x4m N-MOSFET (4m High Voltage Process) Vgs = 18V Vgs = 15V 4 m - 15 volts Ids (mA) min. typ. 3300 2000 39 90 20 28 0.038 0.038 3000 50 125 max. Vgs = 12V Vgs = 9V Vgs = 6V Vgs = 3V 28 50 Vds (volts) FIG 2 : I-V Characteristics for a 50x4m P-MOSFET (4m High Voltage Process) Vgs = -18V Vgs = -15V Capacitances (fF/m ) 4 m - 10 volts min. Inter-poly Gate oxide N+ Junction P+ Junction 0.35 0.51 typ. 0.43 0.54 0.33 0.14 max. 0.55 0.58 2 4 m - 15 volts min. 0.45 0.41 typ. 0.55 0.43 0.29 0.10 max. 0.65 0.46 Ids (mA) Vgs = -12V Vgs = -9V Vgs = -6V Vgs = -3V Vds (volts) FIG 3: Substrate Current per Gate Width for a 50x4m N-MOSFET (4m High Voltage Process) Vds = 18V 4 m - 10 volts min. NPN vertical PNP vertical * 4 m - 15 volts min. typ. 240 70 90 max. Isub (A/m) Bipolar characteristics typ. 580 max. Vds = 16V Vds = 14V Gain* Bvceo (V) Gain* Bvceo (V) 70 - 90 - Vgs (volts) 50 20 120 30 200 FIG 4 :Vertical PNP bipolar transistor Ib = -10mA Test condition : Vce = 5 volts -2.5 -2.0 Ic (mA) -1.5 -1.0 Ib = -5mA Note: These values are for guidance only. Many of them can be adjusted to suit customer requirements. For full process specifications contact a Dalsa Semiconductor sales office or representative. -0.5 0 0 -20 Ib = -1mA -40 Vce (volts) |
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