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| IL1/2/5 Phototransistor Optocoupler FEATURES * Current Transfer Ratio at IF=10 mA IL1, 20% Min. IL2, 100% Min. IL5, 50% Min. * High Collector-Emitter Voltage IL1 - BVCEO=50 V IL2, IL5 - BVCEO=70 V * Field-Effect Stable by TRansparent IOn Shield (TRIOS) * Double Molded Package Offers Isolation Test Voltage 5300 VRMS * Underwriters Lab File #E52744 V * VDE Approval #0884 (Available with Option 1) DE Dimensions in inches (mm) 3 .248 (6.30) .256 (6.50) 4 5 6 2 1 pin one ID Anode 1 Cathode 2 NC 3 .300 (7.62) typ. 6 5 4 Base Collector Emitter .335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) 18 .031 (0.80) min. 3-9 .031 (0.80) .035 (0.90) .100 (2.54) typ. .010 (.25) typ. .300-.347 (7.62-8.81) .114 (2.90) .130 (3.0) DESCRIPTION The IL1/2/5 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The IL1/2/5 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. These couplers can be used also to replace relays and transformers in many digital interface applications such as CRT modulation. See Appnote 45, "How to Use Optocoupler Normalized Curves". Maximum Ratings Emitter Reverse Voltage ................................................................................... 6.0 V Forward Current ................................................................................60 mA Surge Current.......................................................................................2.5 A Power Dissipation............................................................................ 100 mW Derate Linearly from 25C........................................................ 1.33 mW/C Detector Collector-Emitter Reverse Voltage IL1 ....................................................................................................... 50 V IL2, IL5 ................................................................................................ 70 V Emitter-Base Reverse Voltage.............................................................. 7.0 V Collector-Base Reverse Voltage............................................................ 70 V Collector Current ...............................................................................50 mA Collector Current (t<1.0 ms) ............................................................400 mA Power Dissipation............................................................................ 200 mW Derate Linearly from 25C .......................................................... 2.6 mW/C Package Package Power Dissipation ........................................................... 250 mW Derate Linearly from 25C .......................................................... 3.3 mW/C Isolation Test Voltage (between emitter and detector referred to standard climate 23C/50%RH, DIN 50014) .......... 5300 VRMS Creepage ...................................................................................... 7.0 mm Clearance...................................................................................... 7.0 mm Comparative Tracking Index per DIN IEC 112/VDE 0303, part 1 ........................................................... 175 Isolation Resistance VIO=500 V, TA=25C ................................................................... 1012 VIO=500 V, TA=100C ................................................................. 1011 Storage Temperature ........................................................ -40C to +150C Operating Temperature .................................................... -40C to +100C Junction Temperature......................................................................... 100C Soldering Temperature (2.0 mm from case bottom) .......................... 260C 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-85 March 17. 2000-13 Characteristics Symbol Emitter Forward Voltage Breakdown Voltage Reverse Current Capacitance Thermal Resistance Junction to Lead Detector Capacitance Min Typ Max Unit Condition VF VBR IR CO RTHJL -- 6.0 -- -- -- 1.25 30 0.01 40 750 1.65 -- 10 -- -- V IF=60 mA IR=10 A A pF K/W VR=6.0 V VR=0 V, f=1.0 MHz -- CCE CEB -- CCB 6.8 8.5 11 5.0 0.25 0.65 650 400 500 -- pF VCE=5.0 V, f=1.0 MHz VCB=5.0 V, f=1.0 MHz VEB=5.0 V, f=1.0 MHz VCE=10 V ICE=1.0 mA, IB=20 A Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Forward Current Gain Saturated DC Forward Current Gain Thermal Resistance Junction to Lead Package Transfer Characteristics IL1 Saturated Current Transfer Ratio (Collector-Emitter) Current Transfer Ratio (Collector-Emitter) Current Transfer Ratio (Collector-Base) IL2 Saturated Current Transfer Ratio (Collector-Emitter) Current Transfer Ratio (Collector-Emitter) Current Transfer Ratio IL5 Saturated Current Transfer Ratio (Collector-Emitter) Current Transfer Ratio (Collector-Emitter) Current Transfer Ratio Isolation and Insulation Common Mode Rejection Output High Common Mode Rejection Output Low Common Mode Coupling Capacitance Package Capacitance Insulation Resistance ICEO VCESAT VBE HFE HFESAT -- -- -- 200 120 -- 50 -- -- 1800 600 -- nA V V -- -- K/W VCE=10 V, IB=20 A VCE=10 V, IB=20 A VCE=0.4 V, IB=20 A -- RTHJL CTRCESAT CTRCE CTRCB -- 20 -- 75 80 0.25 -- 300 -- % IF=10 mA, VCE=0.4 V IF=10 mA, VCE=10 V IF=10 mA, VCB=9.3 V CTRCESAT CTRCE CTRCB -- 100 -- 170 200 0.25 -- % 500 -- IF=10 mA, VCE=0.4 V IF=10 mA, VCE=10 V IF=10 mA, VCB=9.3 V CTRCESAT CTRCE CTRCB -- 50 -- 100 130 0.25 -- 400 -- % IF=10 mA, VCE=0.4 V IF=10 mA, VCE=10 V IF=10 mA, VCB=9.3 V CMH CML -- -- -- -- -- 5000 -- -- V/s VCM=50 VP-P, RL=1 k, IF=10 mA CCM CI-O RS 0.01 0.6 10 14 -- -- -- pF -- VI-O=0 V, f=1.0 MHz VI-O=500 V 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-86 IL1/2/5 March 17. 2000-13 Switching Times Figure 1. Non-saturated switching timing VCC=5 V IF=10 mA F=10 KHz DF=50% VO RL=75 Figure 3. Non-saturated switching timing IF tPHL V0 tPLH tS 50% Figure 2. Saturated switching timing VCC=5 V F=10 KHz DF=50% IF=10 mA RL VO tD tR tF Figure 4. Saturated switching timing IF VO tD tR tPLH VTH=1.5 V tF tPHL tS Non-Saturated Switching Time Table--Typical Characteristic Delay Rise Time Storage Fall Time Propagation H-L Propagation L-H Sym TD IL1 IF=20 mA 0.8 1.9 0.2 1.4 0.7 1.4 IL2 IF=5.0 mA 1.7 2.6 0.4 2.2 1.2 2.3 IL5 IF=10 mA 1.7 2.6 0.4 2.2 1.1 2.5 Unit s Test Condition -- tr tS VCC=5.0 V RL=75 -- tf tPHL tPLH tp measured at 50% of output -- Saturated Switching Time Table--Typical Characteristic Delay Rise Time Storage Fall Time Propagation H-L Propagation L-H Sym TD IL1 IF=20 mA 0.8 1.2 7.4 7.6 1.6 8.6 IL2 IF=5.0 mA 1.0 2.0 5.4 13.5 5.4 7.4 IL5 IF=10 mA 1.7 7.0 4.6 20 2.6 7.2 Unit s Test Condition -- VCL=5.0 V tr tS VCE=0.4 RL=1.0 K VTH=1.5 V -- tf tPHL tPLH 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-87 IL1/2/5 March 17. 2000-13 Figure 5. Forward voltage versus forward current 1.4 VF - Forward Voltage - V 1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1 1 10 IF - Forward Current - mA 100 TA = 100C TA = 25C TA = -55C Figure 9. Normalized non-saturated and saturated CTR at TA=100C versus LED current 1.5 NCTR - Normalized CTR Normalized to: VCE=10 V, IF=10 mA, TA=25C CTRce(sat) VCE=0.4 V TA=100C 0.5 NCTR(SAT) NCTR 0.0 .1 1 10 IF - LED Current - mA 100 1.0 Figure 6. Normalized non-saturated and saturated CTR at TA=25C versus LED current NCTR - Normalized CTR 1.5 Normalized to: VCE = 10 V, IF = 10 mA TA = 25C CTRce(sat) VCE = 0.4 V Figure 10. Collector-emitter current versus temperature and LED current 35 Ice - Collector Current - mA 30 25 20 15 10 5 0 0 10 20 30 40 IF - LED Current - mA 50 60 25C 100C 70C 50C 1.0 0.5 NCTR(SAT) NCTR 0.0 .1 1 10 IF - LED Current - mA 100 Figure 7. Normalized non-saturated and saturated CTR at TA=50C versus LED current 1.5 NCTR - Normalized CTR Normalized to: VCE=10 V, IF=10 mA, TA=25C CTRce(sat) VCE = 0.4 V TA = 50C Figure 11. Collector-emitter leakage current versus temperature ICEO - Collector-Emitter - nA 105 104 103 102 101 100 10-1 10-2 -20 0 20 40 60 80 100 1.0 Worst Case VCE = 10 V Typical 0.5 NCTR(SAT) NCTR 0.0 .1 1 10 IF - LED Current - mA 100 TA - Ambient Temperature - C Figure 8. Normalized non-saturated and saturated CTR at TA=70C versus LED current 1.5 NCTR - Normalized CTR Normalized to: VCE=10 V, IF=10 mA TA=25C CTRce(sat) VCE = 0.4V TA=70C 0.5 NCTR(SAT) NCTR .1 1 10 IF - LED Current - mA 100 Figure 12. Normalized CTRcb versus LED current and temperature NCTRcb - Normalized CTRcb 1.5 Normalized to: IF =10 mA Vcb = 9.3 V Ta = 25C 1.0 1.0 0.5 0.0 25C 50C 70C .1 1 10 IF - LED Current - mA 100 0.0 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-88 IL1/2/5 March 17. 2000-13 Figure 13. Collector base photocurrent versus LED current 1000 Icb - Collector Base Photocurrent - A Figure 16. Normalized saturated HFE versus base current and temperature 1.5 NHFE(sat) - Normalized Saturated HFE 70C 50C 25C -20C Normalized to: VCE = 10 V IB = 20 A TA = 25C Ta = 25C 100 10 1 .1 .01 .1 1 10 IF - LED Current - mA 100 Icb = 1.0357 *IF ^1.3631 1.0 0.5 VCE = 0.4 V 0.0 1 10 100 IB - Base Current - (A) 1000 Figure 14. Normalized photocurrent versus IF and temperature 10 Normalized Photocurrent Normalized to: IF = 10 mA, TA = 25C 1 Figure 17. Propagation delay versus collector load resistor 1000 tp - Propagatio Delay - s 100 2.0 .1 NIB-TA=-20C NIb,TA=25C NIb,TA=50C NIb,TA=70C 1 10 IF -LED Current- mA 100 10 tpLH 1 1.5 1.0 .1 1 10 RL - Collector Load Resistor - K 100 .01 .1 Figure 15. Normalized non-saturated HFE versus base current and temperature 1.2 NHFE - Normalized HFE 70C 50C 1.0 0.8 0.6 0.4 1 10 100 Ib - Base Current - A 1000 25C -20C Normalized to: Ib = 20A Vce = 10 V Ta = 25C 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-89 IL1/2/5 March 17. 2000-13 tpHL - Propagation Delay - s Ta = 25C, IF = 10mA Vcc = 5 V, Vth = 1.5 V tpHL 2.5 |
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