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| CORPORATION GL359 Description ISSUED DATE :2005/10/27 REVISED DATE :2005/12/09B PNP SILICON PLANAR HIGH CURRENT TRANSISTOR The GL359 is designed for general purpose switching and amplifier applications. Features & Amps continuous current, up to 10Amps peak current 5 Package Dimensions &Excellent gain characteristic specified up to 10Amps &Very low saturation voltages SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 -140 -100 -6 -5 -10 3 Unit V V V A A W *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum. Electrical Characteristics(Ta = 25 : Symbol BVCBO *BVCEO BVEBO ICBO ICES IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VCE(sat)4 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Min. -140 -100 -6 100 100 50 30 Typ. -20 -90 -160 -300 -1.01 -0.925 200 200 90 50 15 125 ,unless otherwise stated) Max. Unit Test Conditions V IC=-100uA , IE=0 V IC=-10mA, IB=0 V IE=-100uA ,IC=0 -50 nA VCB=-100V, IE=0 -50 nA VCES=-100V -10 nA VEB=-6V, IC=0 -50 mV IC=-100mA, IB=-10mA -115 mV IC=-1A, IB=-100mA -220 mV IC=-2A, IB=-200mA -420 mV IC=-4A, IB=-400mA -1.17 V IC=-4A, IB=-400mA -1.16 V VCE=-1V, IC=-4A VCE=-1V, IC=-10mA 300 VCE=-1V, IC=-1A VCE=-1V, IC=-3A VCE=-1V, IC=-4A VCE=-1V, IC=-10A MHz VCE=-10V, IC=-100mA, f=50MHz GL359 Page: 1/2 CORPORATION Cob ton toff 65 110 460 pF ns 2% ISSUED DATE :2005/10/27 REVISED DATE :2005/12/09B VCB=-10V, IE=0, f=1MHz VCC=-10V, IC=-2A, IB1=-200mA, IB2=200mA *Measured under pulse condition. Pulse width 300 s, Duty Cycle Characteristics Curve Spice parameter data is available upon request for this device. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GL359 Page: 2/2 |
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