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W TE PO WE R SEM IC O ND UC TO R S B1S - B8S 0.5A MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Features ! ! ! ! ! ! Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Surge Current Capability Designed for Surface Mount Application Plastic Material - UL Recognition Flammability Classification 94V-O G B ~ + ~ H D C E M A L Mechanical Data ! ! ! ! ! ! Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Case Weight: 0.22 grams (approx.) Mounting Position: Any Marking: Type Number J K MB-S Dim Min Max A 4.50 4.90 B 3.80 4.20 C 0.006 0.35 D -- 0.20 E -- 7.0 G 0.70 1.10 H 1.30 1.70 J 2.30 2.70 K 2.30 2.70 L -- 3.00 M 0.50 0.80 All Dimensions in mm Maximum Ratings and Electrical Characteristics Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. @TA=25C unless otherwise specified Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TA = 40C Symbol VRRM VRWM VR VR(RMS) IO B1S B2S B4S B6S B8S Unit 100 70 200 140 400 280 0.5 600 420 800 560 V V A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I2t Rating for Fusing (t < 8.35ms) Forward Voltage per element Peak Reverse Current At Rated DC Blocking Voltage @IF = 0.5A @TA = 25C @TA = 125C IFSM I2t VFM IRM Cj RJA Tj, TSTG 30 10 1.0 5.0 500 25 85 -55 to +150 A A2s V A pF K/W C Typical Junction Capacitance (per leg) (Note 1) Typical Thermal Resistance (per leg) (Note 2) Operating and Storage Temperature Range Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 2. Thermal resistance junction to ambient mounted on PC board with 13mm2 copper pads. B1S - B8S 1 of 2 (c) 2000 Won-Top Electronics IF, INSTANTANEOUS FORWARD CURRENT (A) 0.50 60 Hz Resistive or Inductive load 10 Tj = 25C Pulse Width = 300s 2% duty cycle I(AV), AVERAGE FORWARD CURRENT (A) 1.0 0.25 0.1 0 40 60 80 100 120 140 0.01 0.4 0.6 0.8 1.0 1.2 1.4 TA, AMBIENT TEMPERATURE (C) Fig. 1 Output Current Derating Curve VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typ Forward Characteristics (per element) IFSM , PEAK FORWARD SURGE CURRENT (A) 60 Single half-sine-Wave (JEDEC M ethod) 100 Tj = 25c f = 1.0 Mhz Vsig = 50 mV p-p 50 CJ, CAPACITANCE (pF) 40 30 10 20 10 0 1 10 100 1 1 10 100 NUM BER OF CYCLES AT 60 Hz Fig. 3 M ax Non-Repetitive Peak Forward Surge Current VR, REVERSE VOLTAGE (V) Fig. 4 Typ Junction Capacitance (per element) 100 IR, INSTANTANEOUS REVERSE CURRENT (A) Tj = 125C 10 1.0 Tj = 25C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typ Reverse Characteristics (per element) B1S - B8S 2 of 2 (c) 2000 Won-Top Electronics |
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