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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A94
TRANSISTORPNP (c) TO 92
FEATURES Power dissipation PCM: 0.625 W Collector current ICM: -0.2 A Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL unless CHARACTERISTICS Tamb=25 ae specified(c)
Symbol V (BR) CBO V (BR) CEO V (BR) EBO ICBO ICEO IEBO hFE(c) 1 DC current gain hFE(c) 2 hFE(c) 3 VCE (sat) Collector-emitter saturation voltage VCE (sat) Base-emitter saturation voltage Transition frequency VBE (sat) fT Test
Tamb=25ae(c)
1.EMITTER
2.BASE
3. COLLECTOR
123
otherwise
Parameter
conditions
MIN -400 -400 -5
TYP
MAX
UNIT V V V
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current
Ic= -100|I AIE=0 IC= -1 mA =0 IB IE=-100|I IC=0 A VCB=-400 V, IE=0 VCE=-400 V, IB=0 VEB= -4 V, IC=0 VCE=-10V, IC=-10 mA VCE=-10V, IC=-1mA VCE=-10V, IC=-100 mA IC=-10 mA =-1mA IB IC=-50 mA =-5mA IB IC=-10 mA = -1 mA IB VCE=-20VIC=-10mA f =30MHz
-0.1 -5 -0.1 80 70 60 -0.2 -0.3 -0.75 50 300
|I A |I A |I A
V V V MHz
TO-92 PACKAGE OUTLINE DIMENSIONS
D
D1
A
A1
E
b |O
e e1
Symbol A A1 b c D D1 E e e1 L O
Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min
L
Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169
C

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